CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R FEATURES: (4X).060 R E • Internal Input/Output Matching Network • PG = 9.0 dB at 100 W/ 960 MHz • Omnigold™ Metalization System M D C .1925 F H G N I L MAXIMUM RATINGS J 25 A IC VCBO 60 V K DIM MIN IMUM inches / m m MAXIMUM inches / m m A .220 / 5.59 .230 / 5.84 .210 / 5.33 B C .120 / 3.05 D .380 / 9.65 .130 / 3.30 .390 / 9.91 E .780 / 19.81 .820 / 20.83 VCEO 30 V F .435 / 11.05 VEBO 3.0 V G 1.090 / 27.69 H 1.335 / 33.91 1.345 / 34.16 310 W @ TC = 25 °C I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .082 / 2.08 .100 / 2.54 M .395 / 10.03 .407 / 10.34 N .850 / 21.59 .870 / 22.10 PDISS TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.6 °C/W CHARACTERISTICS ORDER CODE: ASI10585 TC = 25 °C NONETEST CONDITIONS SYMBOL .205 / 5.21 L MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 60 V BVCEO IC = 100 mA 30 V BVEBO IE = 50 mA 3.0 V ICES VCE = 28 V hFE VCE = 5.0 V IC = 3.0 A PG IMD ηC VCE = 24 V POUT = 100 W ICQ = 2 X 100 mA 15 f = 960 MHz 9.0 -32 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 mA 70 --dB dBc % REV. B 1/1