CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM9936AJPT CURRENT 5.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM9936AJPT Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 5.4 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 22 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W 2008-01 RATING CHARACTERISTIC ( CHM9936AJPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 3 1 VGS=10V, ID=5.4A 32 40 VGS=4.5V, ID=3.2A 42 55 VDS =10V, ID = 5.4A 5 V mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 400 VDS = 15V, VGS = 0V, f = 1.0 MHz 180 pF 55 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd 12 VDS=15V, ID=5.4A 17 nC 2 VGS=10V 3 t on Turn-On Time V DD= 10V 23 45 tr Rise Time I D = 1.0A , VGS = 10 V 14 35 t off Turn-Off Time RGEN= 6 Ω 45 90 tf Fall Time 10 30 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 2.5A , VGS = 0 V (Note 1) (Note 2) 1.7 A 1.3 V RATING CHARACTERISTIC CURVES ( CHM9936AJPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 30 18 V G S =1 0 , 8 , 7 , 6 V 15 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 25 20 15 VG S =4 . 0 V 10 12 9 6 TJ=125°C VG S =3 . 0 V 0 0 1.0 2.0 3.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) TJ=25°C 0 4.0 VGS=10V ID=6.2A 1.9 R DS(on) , NORMALIZED 6 4 2 0 0 3 6 Qg , TOTAL GATE CHARGE (nC) 9 15 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) VDS=15V ID=6.2A THRESHOLD VOLTAGE 5.0 Figure 4. On-Resistance Variation with Temperature 2.2 8 1.3 3.0 4.0 2.0 1.0 VGS , GATE-TO-SOURCE VOLTAGE (V) 0 Figure 3. Gate Charge 10 Vth , NORMALIZED GATE-SOURCE TJ=-55°C 3 5 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200