INFRA-RED Item No.: 127141 D 1. This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy Wire bond contacts can also have a spider shape 3. Outlines (dimensions in microns) n-Electrode n-Epitaxy GaAlAs 325 120 150 typ. Active Layer p-Epitaxy GaAlAs p-Electrode 325 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min typ max Unit 1,85 1,95 V Forward voltage VF IF = 20 mA 1,60 Reverse voltage VR IR = 10 µA 5 output Power * Φe IF = 20 mA 2,5 3,0 4,0 mW Peak wavelength λP IF = 20 mA 719 724 729 nm tr, tf IF = 20 mA Switching time 40/30 ½ band width ∆λ IF = 20 mA Power measurement at OSA on gold plate 5. V 25 ns 29 ns Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]