CMA30E1600PZ Thyristor VRRM = 1600 V I TAV = 30 A VT = 1.42 V Single Thyristor Part number CMA30E1600PZ Backside: anode 4 1 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a CMA30E1600PZ Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 V I R/D reverse current, drain current VR/D = 1600 V TVJ = 25°C 10 µA VR/D = 1600 V TVJ = 125°C 2 mA TVJ = 25°C 1.42 V 1.80 V 1.42 V VT IT = forward voltage drop 30 A IT = 60 A IT = 30 A IT = 60 A I TAV average forward current TC = 115°C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 °C for power loss calculation only Ptot I²t min. 1.92 V T VJ = 150 °C 30 A 47 A TVJ = 150 °C 0.90 V 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 260 A t = 8,3 ms; (60 Hz), sine VR = 0 V 280 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 220 A t = 8,3 ms; (60 Hz), sine VR = 0 V 240 A t = 10 ms; (50 Hz), sine TVJ = 45°C 340 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 325 A²s TVJ = 150 °C 240 A²s 240 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 13 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 0.25 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 17 0.5 TVJ = 125°C; f = 50 Hz repetitive, IT = 90 A non-repet., IT = 30 A pF 10 W 5 W 0.5 W 150 A/µs t P = 200 µs; di G /dt = 0.2 A/µs; IG = (dv/dt) cr critical rate of rise of voltage VGT gate trigger voltage I GT gate trigger current 0.2 A; VD = ⅔ VDRM 500 A/µs TVJ = 125°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C 28 mA TVJ = -40 °C 50 mA TVJ = 150 °C 0.2 V 1 mA TVJ = 25 °C 90 mA VD = ⅔ VDRM R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs IG = 0.2 A; di G /dt = V 0.2 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 30 A; VD = ⅔ VDRM TVJ = 150 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 150 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a CMA30E1600PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 °C -40 150 °C Weight 1.5 FC 20 mounting force with clip d Spp/App d Spb/Apb C M A 30 E 1600 PZ IXYS yyww z Logo Date Code Assembly Line N 4.2 mm terminal to backside 4.9 mm Part number XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air Product Marking g = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Part Number CMA30E1600PZ Equivalent Circuits for Simulation I V0 R0 Marking on Product CMA30E1600PZ * on die level Delivery Mode Tape & Reel Code No. 513695 T VJ = 150°C Thyristor V 0 max threshold voltage 0.9 V R 0 max slope resistance * 14 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a CMA30E1600PZ Outlines TO-263 (D2Pak-HV) Dim. Supplier Option A1 H D E c2 A D1 L1 W e1 4 A2 D2 3 L 1 c 2x e 2x b2 2x b E1 4 A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 W Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a CMA30E1600PZ Thyristor 250 60 1000 VR = 0 V 50 Hz, 80% VRRM 50 TVJ = 45°C 200 40 IT ITSM 2 It 30 [A] TVJ = 45°C [A] 20 2 [A s] 150 TVJ = 125°C 10 TVJ = 125°C 150°C TVJ = 25°C 0 0.5 1.0 100 1.5 10 2.0 0.01 0.1 VT [V] 1 IGD: TVJ = -40°C IGD: TVJ = 0°C IGD: TVJ = 25°C [V] Fig. 3 I t versus time (1-10 s) 30 TVJ = 125°C tgd ITAVM [μs] [A] dc = 1 0.5 0.4 0.33 0.17 0.08 20 lim. 100 10 typ. 10-1 50 4 5 6 7 8 910 t [ms] IGD: TVJ = 25°C 25 3 40 101 0 0 2 2 102 3 2 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125°C VG 1 t [s] Fig. 1 Forward characteristics 4 TVJ = 125°C 100 -2 75 10-1 100 0 101 0 40 IG [A] IG [mA] Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 5 Gate controlled delay time tgd Triggering: A = no; B = possible; C = safe Fig. 6 Max. forward current at case temperature 0.6 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 60 dc = 1 0.5 0.4 0.33 P(AV)40 0.17 0.08 0.4 ZthJC i Rthi (K/W) 1 0.08 2 0.06 3 0.2 4 0.05 5 0.11 [K/W] [W] 0.2 20 0 ti (s) 0.01 0.0001 0.02 0.2 0.11 0.0 0 10 20 30 40 0 IF(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20130118a