CMT60N03G N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS(ON) Typ. ID Inductive Switching Curves 30V 10.8mΩ 50A Improved UIS Ruggedness PIN CONFIGURATION SYMBOL TO-252 TO-263 Front View Front View D SOURCE DRAIN GATE D G 1 2 3 S G 1 2 S N-Channel MOSFET 3 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VDSS 30 V ID 50 A － Continuous Tc = 100℃, VGS@10V (Note 2) ID Fig.3 － Pulsed Tc = 25℃, VGS@10V (Note 3) IDM Fig.6 Gate-to-Source Voltage － Continue VGS ±20 V Total Power Dissipation PD 52 W Drain to Source Voltage (Note 1) Drain to Current － Continuous Tc = 25℃, VGS@10V (Note 2) Derating Factor above 25℃ 0.5 W/℃ dv/dt 3.0 V/ns Operating Junction and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Single Pulse Avalanche Energy L=1.1mH,ID=30 Amps EAS 500 mJ Maximum Lead Temperature for Soldering Purposes TL 300 ℃ TPKG 260 ℃ IAS Fig.8 Peak Diode Recovery dv/dt (Note 4) Maximum Package Body for 10 seconds Pulsed Avalanche Rating THERMAL RESISTANCE Symbol RθJC Parameter Junction-to-case RθJA Junction-to-ambient (PCB Mount) Junction-to-ambient RθJA 2006/10/11 Rev1.2 Min Typ Max 2.4 Units ℃/W 50 ℃/W 62 ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air Champion Microelectronic Corporation Page 1 CMT60N03G N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number Package CMT60N03GN252 TO-252 CMT60N03GN263 TO-263 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT60N03G Characteristic Symbol Min VDSS 30 Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage V (VGS = 0 V, ID = 250 μA) Breakdown Voltage Temperature Coefficient, Fig.11 ΔVDSS/ΔTJ 27 mV/℃ (Reference to 25℃, ID = 250 μA) Drain-to-Source Leakage Current IDSS μA (VDS = 24 V, VGS = 0 V, TJ = 25℃) 1 (VDS = 24 V, VGS = 0 V, TJ = 125℃) 10 Gate-to-Source Forward Leakage IGSS 100 nA IGSS -100 nA 3.0 V (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics VGS(th) Gate Threshold Voltage,Fig.12 1.0 (VDS = VGS, ID = 250 μA) Static Drain-to-Source On-Resistance, Fig.9,10 (Note 5) RDS(on) (VGS = 10 V, ID = 15A) mΩ 10.8 (VGS = 4.5 V, ID = 12A) 12.5 15.4 Forward Transconductance (VDS = 15 V, ID = 12A) (Note 5) gFS 28 S (VDS = 15 V, VGS = 0 V, Ciss 1520 f = 1.0 MHz) Coss 314 pF pF Fig.14 Crss 152 pF Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Total Gate Charge (VGS = 4.5 V) Gate-to-Source Charge Qg 27.9 35 (VDS = 15 V, ID = 12 A) (Note 6) Qg 14 19 Fig.15 Qgs 4.9 nC Qgd 4.3 nC td(on) 10 tr 3.4 ns ns td(off) 36 ns tf 6.0 ns td(on) 16 tr 7.2 ns ns td(off) 34 ns tf 14 ns Gate-to-Drain Charge nC nC Resistive Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 15 V, ID = 12 A, VGS = 10 V, RG = 1.0Ω) (Note 6) (VDD = 15 V, ID = 12 A, VGS = 4.5V, RG = 1.0Ω) (Note 6) Source-Drain Diode Characteristics Continuous Source Current (Body Diode Fig.16) IS 50 A ISM Fig.6 A Integral pn-diode in MOSFET Pulse Source Current (Body Diode) Forward On-Voltage (IS = 12 A, VGS = 0 V) VSD 1.0 V Forward Turn-On Time (IF = 12 A, VGS = 0 V, trr 25 38 ns di/dt = 100A/μs) Qrr 31 46 nC Reverse Recovery Charge 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 2 CMT60N03G N-CHANNEL Logic Level Power MOSFET Note 1: TJ = +25℃ to 150℃ Note 2: Current is calculated based upon maximum allowable junction temperature. Package current limitation is 30A. Note 3: Repetitive rating; pulse width limited by maximum junction temperature. Note 4: ISD = 12.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, TJ = +150℃ Note 5: Pulse width ≤ 250μs; duty cycle ≤ 2% Note 6: Essentially independent of operating temerpature. 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 3 CMT60N03G N-CHANNEL Logic Level Power MOSFET PACKAGE DIMENSION TO-252 C B PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E V R S A 4 2 3 U K 1 L J D H G TO-263 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE C B 2 3 K 1 S A V E G 2006/10/11 Rev1.2 J D H Champion Microelectronic Corporation Page 4 CMT60N03G N-CHANNEL Logic Level Power MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan 2006/10/11 Rev1.2 T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 Champion Microelectronic Corporation Page 5