PROCESS CP229 Small Signal Transistors NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 8.7 MILS Base Bonding Pad Area 3.2 MILS Diameter Emitter Bonding Pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 10,000Å Back Side Metalization Au - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 17,000 PRINCIPAL DEVICE TYPES 2N5109 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (23- September 2005)