MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 1.0±0.5 CR3AMZ 8 MAX TYPE NAME VOLTAGE CLASS 4 MAX 12 MIN 1.2±0.1 0.8 0.8 1.5 MIN 4.5 MAX 2.5 2.5 1.55±0.1 123 10 MAX 2 1 CATHODE 2 ANODE 3 GATE 3 • IT (AV) ........................................................................ 0.4A • VDRM ....................................................................... 400V • IGT ..........................................................................30mA 0.5 1 TO-202 APPLICATION Automatic strobe flasher MAXIMUM RATINGS Symbol Voltage class Parameter Unit 8 VRRM Repetitive peak reverse voltage 400 V VRSM Non-repetitive peak reverse voltage 480 V VDRM Repetitive peak off-state voltage 400 V VDSM Non-repetitive peak off-state voltage 480 V Symbol Conditions Parameter IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, ITRM Repetitive peak on-state current ✽1 CM=700µF with discharge current PGM Ratings 0.4 Unit A 200 A Peak gate power dissipation 0.5 W PG (AV) Average gate power dissipation 0.1 W VFGM Peak gate forward voltage 6 V IFGM Peak gate forward current 0.5 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 1.1 g ✽1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=25°C, VRRM applied — — 0.1 mA IDRM Repetitive peak off-state current Tj=25°C, VDRM applied — — 0.1 mA VTM On-state voltage Ta=25°C, I TM=3A, Instantaneous value — — 2.0 V VGT Gate trigger voltage Tj=25°C, VD =6V, RL=6Ω — — 1.5 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.1 — — V IGT Gate trigger current Tj=25°C, VD =6V, RL=6Ω — — 30 mA Cc Commutating capacitor ✽2 CM=700µF, VCM =350V, ITM=200A, L=25µH, Ta=25°C — — 2.2 µF ✽2. Refer to section 3 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR L 15kΩ CC + CM − VCM CR3AMZ-8 10Ω IT 1k 10kΩ 0.1µ CM = 700µF VCM = 350V ITM = 200A 470Ω 0.047µ L = 25µH Ta = 25°C CONDUCTION TIME : arbitarity MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 Ta = 25°C 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 6 7 8 ON-STATE VOLTAGE (V) 9 10 GATE CHARACTERISTICS GATE VOLTAGE (V) ON-STATE CURRENT (A) PERFORMANCE CURVES 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 VFGM = 6V PGM = 0.5W VGT = 1.5V IGT = 30mA (Tj = 25°C) VGD = 0.1V PG(AV) = 0.1W IFGM = 0.5A 10–2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 1.0 TYPICAL EXAMPLE GATE TRIGGER VOLTAGE (V) 102 7 5 4 3 2 101 –20 –10 0 10 20 30 40 50 60 70 80 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) COMMUTATING CHARACTERISTICS 1000 tw 500 400 300 200 100 VCM = 350V Ta = 25°C L = 25µH SEE FIG.1 0 120 140 160 180 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR VS. PEAK ON-STATE CURRENT COMMUTATING CAPACITOR VS. AMBIENT TEMPERATURE VCM = 350V 2.4 CM = 700µF 2.3 L = 25µH Ta = 25°C 2.2 SEE FIG.1 2.1 2.0 1.9 1.8 1.7 1.6 1.5 100 120 140 160 180 PEAK ON-STATE CURRENT (A) 200 COMMUTATING CAPACITOR (Ta = t°C) COMMUTATING CAPACITOR (Ta = 25°C) 100 (%) GATE CURRENT PULSE WIDTH (µs) 2.5 COMMUTATING CAPACITOR (µF) 600 CC=2.2µF CC=2.3µF 102 7 5 3 2 700 CC=2.1µF 103 7 5 3 2 800 CC=2.0µF t CC=1.9µF 0 900 CC=1.8µF IG MAIN CAPACITOR (µF) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 TYPICAL EXAMPLE 0.9 CC=1.7µF GATE TRIGGER CURRENT (Tj=t°C) GATE TRIGGER CURRENT (Tj=25°C) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 180 170 160 150 TYPICAL EXAMPLE 220 VCM = 350V ITM = 200A CM = 700µF L = 25µH 140 130 120 110 100 90 80 0 10 20 30 40 50 60 70 80 90 100 AMBIENT TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR3AMZ LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 101 7 5 3 2 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, PEAK OFF-STATE CURRENT (µA) 100 –60 –40 –20 0 20 40 60 80 100 120 140 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 200 180 TYPICAL EXAMPLE RGK = 1kΩ 160 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) 102 7 5 3 2 VD = 12V RGK = 1kΩ 100 (%) 103 7 5 3 2 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE PEAK REVERSE CURRENT VS. JUNCTION TEMPERATURE VD = 400V RGK = 1kΩ ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) PEAK REVERSE CURRENT (µA) HOLDING CURRENT (mA) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VR = 400V RGK = 1kΩ ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Feb.1999