Data Sheet Switching Diode DAP202U Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 1.3 2.0±0.2 0.65 0.9MIN. Features 1) Small mold type. (UMD3) 2) High reliability. 2.1±0.1 1.25±0.1 (3) 0.8MIN 0～0.1 (1) （0.65） UMD3 0.1Min (2) Construction Silicon epitaxial planar 1.6 0.3±0.1 各リードとも Each lead has same dimension 0.15±0.05 同寸法 （0.65） 0.7±0.1 1.3±0.1 Structure 0.9±0.1 ROHM : JEDEC :S0T-323 JEITA : SC-70 week code (year week factory) Taping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage φ0.5±0.05 4.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward voltage (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) (Single) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Rated in slash put frequency f Limits 2.4±0.1 8.0±0.2 0～0.1 2.4±0.1 2.25±0.1 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Unit V V mA mA A mW °C °C MHz 80 80 300 100 4 200 150 55 to 150 100 Min. Typ. Max. Unit Conditions - - 1.2 V IF=100mA Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.A Data Sheet DAP202U Ta=75℃ 100000 Ta=125℃ 10 Ta=150℃ REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) Ta=150℃ Ta=25℃ Ta=25℃ 1 10 Ta=125℃ f=1MHz 10000 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=75℃ 100 Ta=25℃ 10 Ta=25℃ 1 0.1 0 0 900 10 0 70 880 870 860 AVE:877.0mV 80 60 50 40 30 20 8 7 6 5 4 3 2 AVE:1.840pF 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 5 10 15 8.3ms 10 AVE:2.50A 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT : I FSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc 5 4 3 2 1 Ifsm 4 8.3ms 2 1 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA 10 1ms IF=100mA time 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 8 7 6 5 4 3 AVE:1.32kV AVE:5.47kV 2 1 300us 1 0.001 100 9 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT : I FSM(A) 100 8.3ms 1cyc 3 AVE:1.93ns 0 0 20 Ta=25℃ VR=6V f=1MHz n=10pcs 1 AVE:17.93nA 0 Ifsm 15 9 70 10 20 10 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 890 5 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=70V n=10pcs 90 850 PEAK SURGE FORWARD CURRENT : I FSM(A) 20 30 40 50 60 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 100 Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) 0.1 0.1 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 1000 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A