VISHAY DG4599DL

DG4599
New Product
Vishay Siliconix
Low-Voltage Single-Supply, SPDT Analog Switch in SC-70
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
6-Pin SC-70 Package
60-W Max. (26 Typ.) On-Resistance
2-W Typ. RON Flatness
Fast Switching: tON = 30 ns (Max.)
tOFF = 25 ns (Max.)
D 2.25-V to 5.5-V Single Supply Operation
D Break-Before-Make Switching
D TTL/CMOS-Logic Compatible
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
Battery-Operated Equipment
Audio and Video Signal Routing
Cellular Phones
Low-Voltage Data-Acquistion
Systems
D Sample-and-Hold Circuits
D Communications Systems
DESCRIPTION
The DG4599 is a cost effective upgrade to other types of 4599
low-voltage, single-pole/double-throw analog switches
available in the industry today.
The DG4599 is built on Vishay Siliconix’s low voltage CMOS
process. An epitaxial layer prevents latchup. Break-before
-make is guaranteed for DG4599.
Combining low power, high speed, low on-resistant and small
physical size, the DG4599 is ideal for portable and battery
powered applications.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
SC-70
IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
Top View
Logic
NC
NO
0
ON
OFF
1
OFF
ON
Logic “0” v0.8 V
Logic “1”w 2.4 V
ORDERING INFORMATION
Device Marking: 4J
Document Number: 72218
S-31059—Rev. B, 26-May-03
Temp Range
Package
Part Number
-40 to 85°C
SC70-6
DG4599DL
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1
DG4599
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
Power Dissipation (Packages)b
6-Pin SO70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
SPECIFICATIONS (V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Limits
-40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Flatnessd
VNO, VNC,
VCOM
rDS(on)
V+ = 4.5 V, VD = 3 V, IS = 10 mA
Room
Full
7
10
rDS(on)
Flatness
V+ = 2.5 V
Room
2
IS(off)
Switch Off Leakage Current
ID(off)
Channel-On Leakage Current
ID(on)
60
65
W
V+ = 5.5 V
VS = 1 V/4.5 V, VD = 4.5 V/1 V
V+ = 5.5 V, VS = VD = 1 V/4.5 V
Room
Full
-1.0
-4.0
1.0
4.0
Room
Full
-1.0
-4.0
1.0
4.0
Room
Full
-1.0
-3.0
1.0
4.5
2.4
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
Full
Input Current
IINL or IINH
VIN = 0 or V+
Full
0.8
3
-1
V
pF
1
mA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
VD or VS = 3 V,
V RL = 300 W
W, CL = 35 pF
F
Figure 1 and 2
td
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
Room
Full
9
30
40
Room
Full
5
25
30
ns
10
pC
Room
CL = 1 nF, VS = 0 V
VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W,
W CL = 5 pF,
pF f = 1 MHz
1
4
Room
5
Room
-73
Room
-70
Source-Off Capacitanced
CS(off)
Room
7
Channel-On Capacitanced
CD(on)
Room
20
Drain-to-Source Capacitanced
CDS(off)
Room
20
VIN = 0 or V+, f = 1 MHz
dB
pF
p
Power Supply
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
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2
4.5
0.01
VIN = 0 or V+
5.5
V
1.0
mA
5.5
mW
Document Number: 72218
S-31059—Rev. B, 26-May-03
DG4599
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Limits
-40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistanced
rDS(on) Flatnessd
VNO, VNC,
VCOM
rDS(on)
V+ = 2.7 V, VD = 1.5 V, IS = 10 mA
Room
Full
15
19
rDS(on)
Flatness
VS = 0 to V+, IS = 10 mA
Room
7.5
95
105
W
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Current
IINL or IINH
VIN = 0 or V+
Full
2
0.8
-1
1
V
mA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
Charge Injectiond
VD or VS = 2
2.0
0V
V, RL = 300 W,
W CL = 35 pF
F
Figure 1 and 2
td
QINJ
Room
Full
12
45
55
Room
Full
6
35
40
ns
10
pC
Room
CL = 1 nF, VGEN = 0 V, VS = 0 V
RGEN = 0 W, Figure 3
1
Room
7
5
Power Supply
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
Document Number: 72218
S-31059—Rev. B, 26-May-03
2.7
0.01
VIN = 0 or V+
3.3
V
1.0
mA
3.3
mW
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DG4599
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 2.5 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 2.5 V, "10%, VIN = 0.4 or 2.0 Ve
Limits
-40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Flatnessd
VNO, VNC,
VCOM
rDS(on)
V+ = 2.25 V, VD = 1.0 V, IS = 10 mA
Room
Fulld
26
29
rDS(on)
Flatness
V+ = 2.5 V
Room
10
110
120
W
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Current
IINL or IINH
VIN = 0 or V+
Full
2
0.4
-1
1
V
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
VD or VS = 1
1.5
5V
V, RL = 300 W,
W CL = 35 pF
F
Figures 1 and 2
td
Room
Fulld
16
50
60
Room
Fulld
7
35
45
ns
2.75
V
Room
1
12
Power Supply
Power Supply Range
Power Supply
Currentd
Power Consumption
V+
2.25
I+
PC
0.01
VIN = 0 or V+
1.0
mA
2.75
mW
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for design aid only, not guaranteed nor subject to production testing.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Guaranteed by 5-V leakage testing, not production tested.
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Document Number: 72218
S-31059—Rev. B, 26-May-03
DG4599
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. Analog and Power Voltage
rDS(on) vs. Analog Voltage and Temperature
30
rDS(on) - Drain-Source On-Resistance ( Ω )
rDS(on) - Drain-Source On-Resistance ( Ω )
30
25
V+ = 2.5 V
20
15
V+ = 3 V
10
V+ = 5 V
5
0
V+ = 2.5 V
25
20
85_C
15
25_C
-40_C
V+ = 5 V
5
-40_C
25_C
0
0
1
2
3
4
5
0
1
2
VD - Analog Voltage (V)
3
4
5
VD - Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
100
10 mA
V+ = 5 V
VIN = 0 V
1 mA
10
I+ - Supply Current (nA)
I+ - Supply Current (nA)
85_C
10
1
0.1
100 mA
10 mA
1 mA
100 pA
10 pA
0.01
-60 -40 -20
0
20
40
60
80
1 pA
100 120 140
1
10
100
1K
10 K
1M
100 K
10 M
Input SwitchingFrequency (Hz)
Temperature (_C)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
100
100 K
V+ = 5 V
V+ = 5 V
VD, VS = 5 V
ID(off)
Leakage Current (pA)
Leakage Current (pA)
10 K
0
1K
ID(on)
100
10
-100
ID(off)
IS(off)
-200
ID(on)
-300
-400
-500
-600
1
-50
-25
0
25
50
75
Temperature (_C)
Document Number: 72218
S-31059—Rev. B, 26-May-03
100
125
150
0
1
2
3
4
5
6
VD, VS - Analog Voltage (V)
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DG4599
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
Crosstalk and Off Isolation vs. Frequency
25
100
Off Isolation
25_C
20
80
85_C
15
OIRR, XTALK (dB)
tON, tOFF - Switching Time (nS)
tON
-40_C
tOFF
25_C
10
85_C
5
60
40
2.5
3.0
3.5
4.0
V+ = 3 V
RL = 50 W
20
-40_C
0
2.0
Crosstalk
4.5
5.0
0
10 K
5.5
100 K
V+ - Supply Voltage (V)
10 M
100 M
Frequency (Hz)
Input Switching Threshold vs. Supply Voltage
Insertion Loss vs. Frequency
3.0
0
ËËËËËËË
ËËËËËËË
ËËËËËËË
ËËËËËËË
ËËËËËËË
ËËËËËËË
2.0
1.5
1.0
0.5
-2
-3
-4
-5
0.0
0
1
2
3
4
5
V+ = 3 V
RL = 50 W
-1
Insertion Loss (dB)
2.5
VT - Threshold Voltage (V)
1M
6
-6
7
10 K
1K
V+ - Supply Voltage (V)
100 K
1M
10 M
100 M
1G
Frequency (Hz)
Charge Injection vs. Analog Voltage
6
CL = 1 nF
4
Charge Injection (pC)
V+ = 2.5 V
2
V+ = 3 V
0
-2
V+ = 5 V
-4
-6
0
1
2
3
4
5
6
VD - Analog Voltage (V)
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Document Number: 72218
S-31059—Rev. B, 26-May-03
DG4599
New Product
Vishay Siliconix
TEST CIRCUITS
V+
+3V
Logic
Input
V+
NO or NC
Switch
Input
tr t
20 ns
tf t 20 ns
50%
0V
Switch Output
COM
VOUT
0.9 x VOUT
Switch
Output
IN
Logic
Input
RL
300 W
GND
CL
35 pF
0V
tOFF
tON
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
V OUT + V COM
ǒ
RL
R L ) R ON
Ǔ
FIGURE 1. Switching Time
V+
Logic
Input
V+
0V
COM
NO
VNO
tr <5 ns
tf <5 ns
3V
VO
NC
VNC
RL
300 W
IN
CL
35 pF
GND
VNC = VNO
VO
Switch
Output
90%
0V
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen
DVOUT
V+
NC or NO
COM
VOUT
VOUT
+
IN
Vgen
CL = 1 nF
3V
IN
On
Off
On
GND
Q = DVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 72218
S-31059—Rev. B, 26-May-03
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DG4599
New Product
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
COM
0V, 2.4 V
IN
COM
NC or NO
Off Isolation + 20 log
RL
GND
V NCńNO
V COM
Analyzer
FIGURE 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
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Document Number: 72218
S-31059—Rev. B, 26-May-03