SANYO 15GN01NA

15GN01NA
Ordering number : ENA1105
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Band High-Frequency Switching,
High-Frequency General-Purpose Amplifier Applications
15GN01NA
Features
•
•
Small ON-resistance [Ron=2Ω (IB=3mA)].
Small output capacitance [Cob=1.3pF (VCB=10V)].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
15
V
8
V
VEBO
IC
3
V
50
mA
Junction Temperature
PC
Tj
Storage Temperature
Tstg
400
mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
Conditions
Ratings
min
typ
max
Unit
ICBO
IEBO
VCB=10V, IE=0A
0.5
μA
Emitter Cutoff Current
VEB=2V, IC=0A
0.5
μA
DC Current Gain
hFE
Gain-Bandwidth Product
fT
Cob
VCE=5V, IC=10mA
VCE=5V, IC=10mA
Output Capacitance
200
1.0
400
1.5
GHz
VCB=10V, f=1MHz
1.3
IC=20mA, IB=2mA
0.06
0.12
Base-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=20mA, IB=2mA
0.85
1.0
Output ON resistance
Ron
IB=3mA, f=10kHz
2.0
Collector-to-Emitter Saturation Voltage
pF
V
V
Ω
Marking : ZA
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O2809AB TK IM TC-00002117 No. A1105-1/5
15GN01NA
Package Dimensions
Marking
unit : mm (typ)
7522-003
1
2
3
5.0
4.0
1 : Base
2 : Emitter
3 : Collector
ZA
4.0
5.0
Top view
14.0
0.6
2.0
0.45
0.5
0.45
0.44
1 2 3
SANYO : NP
1.3
50
IC -- VCE
45
0.30
IC -- VCE
10
mA
40
0.20mA
35
30
0.15mA
25
0.10mA
20
15
0.05mA
10
45μA
9
0.25mA
Collector Current, IC -- mA
Collector Current, IC -- mA
1.3
1 : Base
2 : Emitter
3 : Collector
40μA
8
35μA
7
30μA
6
25μA
5
20μA
4
15μA
3
10μA
2
5μA
1
5
IB=0mA
0
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
Collector-to-Emitter Voltage, VCE -- V
0.45
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
IT06247
hFE -- IC
7
VCE=5V
VCE=5V
50
5
DC Current Gain, hFE
Collector Current, IC -- mA
4.5
Collector-to-Emitter Voltage, VCE -- V
IT06246
IC -- VBE
60
IB=0μA
0
0.50
40
30
20
3
2
10
0
100
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT06248
2
3
5
7 1.0
2
3
5
7
10
2
Collector Current, IC -- mA
3
5
7 100
IT05405
No. A1105-2/5
15GN01NA
f T -- IC
5
Cob -- VCB
5
f=1MHz
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- GHz
VCE=5V
3
2
1.0
7
5
3
1.0
3
2
1.0
7
2
3
5
7
2
10
3
5
5
0.1
7
100
IT07402
Collector Current, IC -- mA
3
5
7
2
1.0
3
5
Collector-to-Base Voltage, VCB -- V
Cre -- VCB
5
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Reverse Transfer Capacitance, Cre -- pF
2
1.0
7
5
0.1
10
VCE(sat) -- IC
2
IC / IB=10
f=1MHz
3
7
IT07403
0.1
7
5
3
2
0.01
2
3
5
7
2
1.0
3
5
7
3
10
IT07404
Collector-to-Base Voltage, VCB -- V
7
2
1.0
3
5
7
2
10
Collector Current, IC -- mA
Ron -- IB
10
5
3
5
7
IT06249
PC -- Ta
450
f=10kHz
1kΩ
400
IN
OUT
8
10kΩ
7
IB
Collector Dissipation, PC -- mW
Output ON resistance, Ron -- Ω
9
6
5
4
3
300
250
200
150
100
50
2
1
0.1
350
0
2
3
5
7
1.0
Base Current, IB -- mA
2
3
5
IT05403
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07405
No. A1105-3/5
15GN01NA
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.679
--22.58
4.139
116.73
0.032
73.31
0.753
--12.33
200
0.580
--32.46
2.688
103.88
0.061
70.84
0.727
--16.89
300
0.499
--42.23
2.117
92.82
0.087
66.96
0.703
--22.87
400
0.424
--51.43
1.807
81.91
0.111
62.96
0.682
--28.63
500
0.349
--61.62
1.615
70.91
0.135
58.65
0.660
--35.63
600
0.262
--71.70
1.468
60.67
0.158
54.60
0.629
--42.07
700
0.192
--84.86
1.372
50.52
0.181
51.41
0.605
--48.82
800
0.118
--108.67
1.295
39.92
0.205
47.69
0.571
--57.87
900
0.073
--160.50
1.241
29.90
0.231
44.42
0.539
--66.04
1000
0.103
145.75
1.176
19.87
0.258
40.51
0.508
--76.99
⏐S12⏐
∠S12
⏐S22⏐
∠S22
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
100
0.609
--25.35
5.809
112.60
0.031
75.01
0.685
--12.89
200
0.501
--36.26
3.667
99.43
0.058
72.48
0.659
--16.87
300
0.414
--46.23
2.800
87.86
0.084
69.11
0.635
--22.47
400
0.335
--55.33
2.316
76.81
0.109
65.86
0.615
--27.84
500
0.260
--65.69
2.015
66.02
0.134
61.84
0.595
--34.52
600
0.177
--76.44
1.787
56.16
0.159
57.57
0.564
--40.75
700
0.114
--92.81
1.635
46.31
0.184
54.11
0.540
--47.33
800
0.058
--140.97
1.517
36.10
0.212
49.91
0.505
--56.20
900
0.077
143.92
1.431
26.37
0.240
45.96
0.471
--64.20
1000
0.138
119.67
1.339
16.71
0.269
41.37
0.437
--75.11
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.527
--29.52
7.559
108.11
0.030
76.02
0.623
--12.91
200
0.410
--41.38
4.581
93.88
0.057
74.93
0.600
--16.23
300
0.321
--51.81
3.369
81.99
0.083
71.96
0.580
--21.57
400
0.243
--61.31
2.711
70.96
0.109
68.01
0.563
--26.84
500
0.172
--73.24
2.304
60.45
0.135
63.89
0.545
--33.46
600
0.095
--90.10
2.005
50.91
0.162
59.42
0.515
--39.60
700
0.047
--132.96
1.802
41.36
0.189
55.50
0.491
--46.17
800
0.070
143.26
1.650
31.52
0.219
50.95
0.455
--55.15
900
0.135
116.79
1.535
22.05
0.249
46.42
0.418
--63.06
1000
0.198
106.08
1.422
12.75
0.279
41.29
0.382
--74.27
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.472
--32.94
8.468
104.99
0.029
78.19
0.591
--12.70
200
0.352
--45.65
4.970
90.19
0.056
76.06
0.572
--15.72
300
0.263
--56.94
3.580
78.26
0.083
72.60
0.554
--21.08
400
0.187
--68.09
2.838
67.30
0.110
68.99
0.539
--26.31
500
0.119
--84.10
2.386
56.82
0.136
65.03
0.522
--32.99
600
0.053
--121.65
2.056
47.51
0.164
60.04
0.492
--39.20
700
0.053
160.07
1.832
38.08
0.193
55.97
0.467
--45.88
800
0.115
124.21
1.664
28.36
0.223
50.92
0.430
--54.94
900
0.182
109.00
1.537
19.11
0.254
46.26
0.391
--62.99
1000
0.244
100.79
1.417
9.97
0.284
40.99
0.354
--74.28
No. A1105-4/5
15GN01NA
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellectual property rights which has resulted from the use of the technical information and products mentioned
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This catalog provides information as of October, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1105-5/5