Product specification DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(on) max -30V 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V • • • • • • ID TA = 25°C -3.7A -3.3A -2.7A Low Input Capacitance Low On-Resistance Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation Small-Signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Mechanical Data Applications • • • • • • • • • Motor control Backlighting DC-DC Converters Power management functions Case: SC59 Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SC59 D Gate Top View S G Source Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMG3401LSN-7 Notes: Case SC59 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information G34 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 http://www.twtysemi.com Mar 3 YM NEW PRODUCT Description G34 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 [email protected] 2014 B Jun 6 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D 1 of 2 Product specification DMG3401LSN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Steady State Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -30 ±12 -3.0 -2.3 ID A -3.7 -2.9 -30 -1.5 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current (Note 6) Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 0.8 1.2 159 105 36 -55 to +150 PD RθJA RθJC TJ, TSTG Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V µA nA VGS = 0V, ID = -250μA VDS =-30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD -1.0 41 47 60 12 -0.8 -1.3 50 60 85 -1.0 V Static Drain-Source On-Resistance -0.5 - S V VDS = VGS, ID = -250μA VGS = -10V, ID = -4A VGS = -4.5V, ID = -3.5A VGS = -2.5V, ID = -2.5A VDS = -5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1326 103 71 7.3 11.6 25.1 2 1.7 8 13 71 38 - pF VDS = -15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = -15V, ID = -4A nS VDS = -15V, VGS = -10V, RGEN = 6Ω, RL = 3.75Ω Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ Test Condition 3. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 5.Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing http://www.twtysemi.com [email protected] 2 of 2