TYSEMI DMG3401LSN

Product specification
DMG3401LSN
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(on) max
-30V
50mΩ @ VGS = -10V
60mΩ @ VGS = -4.5V
85mΩ @ VGS = -2.5V
•
•
•
•
•
•
ID
TA = 25°C
-3.7A
-3.3A
-2.7A
Low Input Capacitance
Low On-Resistance
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation Small-Signal enhancement mode MOSFET
features low on-resistance and fast switching, making it ideal for high
efficiency power management applications.
Mechanical Data
Applications
•
•
•
•
•
•
•
•
•
Motor control
Backlighting
DC-DC Converters
Power management functions
Case: SC59
Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SC59
D
Gate
Top View
S
G
Source
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMG3401LSN-7
Notes:
Case
SC59
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
G34
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
http://www.twtysemi.com
Mar
3
YM
NEW PRODUCT
Description
G34 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2013
A
Apr
4
May
5
[email protected]
2014
B
Jun
6
2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
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Product specification
DMG3401LSN
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
-30
±12
-3.0
-2.3
ID
A
-3.7
-2.9
-30
-1.5
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Units
V
V
IDM
IS
A
A
A
Thermal Characteristics
Characteristic
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Value
0.8
1.2
159
105
36
-55 to +150
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
-
-
-1.0
±100
V
µA
nA
VGS = 0V, ID = -250μA
VDS =-30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
-1.0
41
47
60
12
-0.8
-1.3
50
60
85
-1.0
V
Static Drain-Source On-Resistance
-0.5
-
S
V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -4A
VGS = -4.5V, ID = -3.5A
VGS = -2.5V, ID = -2.5A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1326
103
71
7.3
11.6
25.1
2
1.7
8
13
71
38
-
pF
VDS = -15V, VGS = 0V, f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDD = -15V, ID = -4A
nS
VDS = -15V, VGS = -10V,
RGEN = 6Ω, RL = 3.75Ω
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
Test Condition
3. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
5.Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing
http://www.twtysemi.com
[email protected]
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