DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) • • • • • • Drain SOT-363 D2 G1 S1 S2 G2 D1 Body Diode Gate ESD Protected up to 2kV Gate Protection Diode TOP VIEW Source TOP VIEW Internal Schematic EQUIVALENT CIRCUIT PER ELEMENT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 305 800 mA Symbol Value Unit PD 200 mW RθJA 625 °C/W Tj, TSTG -65 to +150 °C Drain Current (Note 1) Continuous Pulsed (Note 3) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA ⎯ ⎯ ⎯ 2.0 3.0 Ω VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) |Yfs| 80 ⎯ ⎯ ms VSD 0.5 ⎯ 1.4 V Input Capacitance Ciss ⎯ ⎯ 50 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5.0 pF Forward Transfer Admittance Diode Forward Voltage (Note 5) VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Notes: 1. 2. 3. 4. 5. VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN601DWK Document number: DS30656 Rev. 5 - 2 1 of 4 www.diodes.com December 2007 © Diodes Incorporated ID, DRAIN CURRENT (A) VGS = 10V 8V 6V 5V 4V 3V 8V 6V 1.0 5V 0.8 4V 0.6 0.4 0.2 3V 0 0 4 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 2 VDS = 10V ID = 1mA Pulsed 1.5 1 1 0.5 0 -50 0.1 -25 75 100 125 0 25 50 TCH, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 150 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT DMN601DWK 0 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN601DWK Document number: DS30656 Rev. 5 - 2 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 2 of 4 www.diodes.com December 2007 © Diodes Incorporated DMN601DWK VGS = 10V Pulsed IDR, REVERSE DRAIN CURRENT (A) ID = 300mA NEW PRODUCT ID = 150mA 0 IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TCH, CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 6) Part Number DMN601DWK-7 Notes: Case SOT-363 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 K7K YM K7K YM S2 Date Code Key Year Code 2005 S 2006 T G2 K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September D1 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMN601DWK Document number: DS30656 Rev. 5 - 2 3 of 4 www.diodes.com December 2007 © Diodes Incorporated DMN601DWK Package Outline Dimensions A SOT-363 Min Max Dim 0.10 0.30 A 1.15 1.35 B C 2.00 2.20 0.65 Nominal D 0.30 0.40 F 1.80 2.20 H 0.10 J ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm NEW PRODUCT B C H K M J D L F Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 1.9 C E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN601DWK Document number: DS30656 Rev. 5 - 2 4 of 4 www.diodes.com December 2007 © Diodes Incorporated