A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A • • • • • • • • Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • 2 Footprint of just 0.6mm – thirteen times smaller than SOT23 0.4mm profile – ideal for low profile applications Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 3KV Qualified to AEC-Q101 Standards for High Reliability Portable electronics • • • • • Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) Drain DFN1006H4-3 S Gate D G Top View Internal Schematic Bottom View ESD PROTECTED TO 3kV Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 3) Part Number DMP21D0UFB4-7B Notes: Marking NO Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DMP21D0UFB4-7B NO NO = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMP21D0UFB4 Datasheet number: DS35279 Rev. 2 - 2 1 of 6 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFB4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current (Note 6) Thermal Characteristics Value -20 ±8 Unit V V ID -0.77 -0.55 -1.17 A IDM -5.0 A Value 0.43 0.99 293 126 -55 to +150 Unit W W °C/W °C/W °C TA = 25°C (Note 4) TA = 85°C (Note 4) TA = 25°C (Note 5) Steady State Continuous Drain Current Symbol VDSS VGSS @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD PD RθJA RθJA TJ, TSTG Thermal Characteristics 10 P(pk), PEAK TRANSIENT POWER (W) 9 Single Pulse RθJA = 120°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 8 7 6 5 4 3 2 1 0 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (SEC) Fig. 1 Single Pulse Maximum Power Dissipation 100 1,000 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 120°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 DMP21D0UFB4 Datasheet number: DS35279 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 2 Transient Thermal Response 2 of 6 www.diodes.com 10 100 1,000 June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFB4 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) - -0.7 V Static Drain-Source On-Resistance RDS (ON) - - |Yfs| VSD 50 - - 495 690 960 -1.2 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -400mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -100mA VDS = -3V, ID = -300mA VGS = 0V, IS = -300mA Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 80 15.5 10.4 599.2 1.54 0.91 0.14 0.24 6.7 9.2 49.2 34.5 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: - mΩ mS V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -8V, VDS = -15V, ID = -1A VGS = -4.5V, VDS = -15V, ID = -1A VDS = -10V, -ID = 1A VGS = -4.5V, RG = 6Ω 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. Typical Characteristics 2.0 2.0 VGS = -4.5V VGS = -4.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.0V VGS = -2.5V 1.5 VGS = -2.0V 1.0 VGS = -1.8V 0.5 VGS = -1.5V 1.5 VDS = -5V 1.0 0.5 TA = 150°C T A = 125°C VGS = -1.2V 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3 Typical Output Characteristic DMP21D0UFB4 Datasheet number: DS35279 Rev. 2 - 2 0 5 3 of 6 www.diodes.com TA = 85°C TA = 25°C T A = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Transfer Characteristic 3.0 June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated 1.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP21D0UFB4 0.9 0.8 0.7 0.6 VGS = -1.8V 0.5 0.4 VGS = -2.5V 0.3 VGS = -4.5V 0.2 0.1 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 1.5 1.3 1.1 VGS = -5.0V ID = -500mA 0.9 VGS = -2.5V ID = -250mA 0.7 0.5 -50 VGS = -4.5V 0.6 0.5 T A = 150°C 0.4 TA = 125°C TA = 85°C 0.3 TA = 25°C 0.2 T A = -55°C 0.1 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Temperature 2.0 0.8 0.7 0.6 VGS = -2.5V ID = -250mA 0.5 0.4 0.3 VGS = -5.0V ID = -500mA 0.2 0.1 0 -50 2.0 1.4 1.8 1.2 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.7 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature 1.0 ID = -1mA 0.8 0.6 0.8 ID = -250µA 0.4 1.6 1.4 1.2 T A = 25°C 1.0 0.8 0.6 0.4 0.2 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 Gate Threshold Variation vs. Ambient Temperature DMP21D0UFB4 Datasheet number: DS35279 Rev. 2 - 2 4 of 6 www.diodes.com 0 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 10 Diode Forward Voltage vs. Current June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFB4 100,000 IGSS, LEAKAGE CURRENT (nA) -IDSS, LEAKAGE CURRENT (nA) 10,000 1,000 TA = 150°C TA = 125°C 100 T A = 85°C 10 10,000 TA = 25°C 1 0 TA = 125°C 1,000 100 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Leakage Current vs. Drain-Source Voltage T A = 85°C T A = 25°C 10 TA = -55°C 1 0.1 0 4 T A = 150°C 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.12 Leakage Current vs. Gate-Source Voltage IGSS, LEAKAGE CURRENT (nA) 100,000 10,000 TA = 150°C TA = 125°C 1,000 100 TA = 85°C TA = 25°C 10 T A = -55°C 1 0.1 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.13 Leakage Current vs. Gate-Source Voltage Package Outline Dimensions A A1 D b1 E e b2 L2 DMP21D0UFB4 Datasheet number: DS35279 Rev. 2 - 2 L3 DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 5 of 6 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFB4 Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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