ROHM DTB133HK

DTB133HK / DTB133HS
Transistors
Digital transistors (built-in resistors)
DTB133HK / DTB133HS
!Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on/off conditions need to be set for operation, making
device design easy.
4) Higher mounting densities can be achieved.
!External dimensions (Units : mm)
(2)
0.95 0.95
1.9
2.9
(3)
0.4
(1)
DTB133HK
1.6
0to0.1
0.3to0.6
1.1
0.8
0.15
2.8
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
!Absolute maximum ratings (Ta = 25°C)
Limits
Unit
VCC
−50
−20
V
VI
Output current
DTB133HK
Power
dissipation DTB133HS
IC
V
Junction temperature
Tj
6
−500
200
300
150
Storage temperature
Tstg
−55~150
Pd
4
2
3Min.
Input voltage
DTB133HS
3
Symbol
(15Min.)
Parameter
Supply voltage
mA
mW
0.45
0.5 0.45
2.5
°C
5
°C
(1) (2) (3)
Taping specifications
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
!Package, marking, and packaging specifications
!Circuit schematic
Part No.
DTB133HK
DTB133HS
Package
Marking
Packaging code
Basic ordering unit (pieces)
SMT3
G98
SPT
-
T146
3000
TP
5000
R1
IN
OUT
R2
GND (+)
IN
OUT
GND (+)
!Electrical characteristics (Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
Symbol
Min.
Typ.
Max.
VI(off)
VI(on)
VO(on)
-
-
−0.3
−2
-
II
-
−0.3
−2.4
IO(off)
56
2.31
−0.1
-
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
∗ Transition frequency of the device.
fT
2.4
-
Unit
V
V
Conditions
VCC = −5V , IO = −100µA
VO = −0.3V , IO = −20mA
IO = −50mA , II = −2.5mA
mA
VI = −5V
µA
-
−0.5
-
VCC = −50V , VI = 0V
IO = −50mA , VO = −5V
3.3
4.29
kΩ
3
200
3.7
-
MHz
-
VCE = −10V , IE = 5mA , f = 100MHz
∗