DTC114EM / DTC114EE / DTC114EUA DTC114ECA / DTC114EKA / DTC114ESA Transistors Digital transistors (built-in resistors) DTC114EM / DTC114EE / DTC114EUA / DTC114ECA / DTC114EKA / DTC114ESA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. !Equivalent circuit OUT R1 IN R2 GND OUT IN GND !Structure NPN digital transistor (with built-in resistors) !External dimensions (Units : mm) 1.0±0.1 (1) (2) (1) IN (2) GND (3) OUT 0.15Max. Abbreviated symbol : 24 0.7±0.1 +0.1 0.2−0.05 (3) 0.55±0.1 0~0.1 +0.1 0.3 −0.05 0.15±0.05 ROHM : EMT3 0.1Min. 0.22 0.5 0.13 0~0.1 0.5 0.5 0.8±0.1 (3) +0.1 0.2−0.05 1.6±0.2 (2) (1) ROHM : VMT3 1.6±0.2 0.2 0.8 1.2 0.32 DTC114EE 1.2 0.8 0.2 0.4 0.4 DTC114EM (1) GND (2) IN (3) OUT Abbreviated symbol : 24 DTC114ECA 2.0±0.2 0.2 0.7±0.1 1.3 2.4 2.1±0.1 2.9±0.2 0.4 (1) GND (2) IN (3) OUT Abbreviated symbol : 24 4±0.2 DTC114ESA 2±0.2 3±0.2 0.8±0.1 0.95 0.95 Each lead has same dimensions ROHM : SST3 0.2Min. 0.15 (1) GND (2) IN (3) OUT 1.1+0.2 −0.1 1.9±0.2 (15Min.) 2.8±0.2 (2) 1.6+0.2 −0.1 0~0.1 (3) Abbreviated symbol : 24 (1) 0.45 (1) (2) 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions DTC114EKA 0.95 0.95 0.95 0~0.1 0.1Min. (3) ROHM : UMT3 EIAJ : SC-70 1.9 (2) 1.25±0.1 (1) 2.9 0.9±0.1 1.3±0.1 0.65 0.65 3Min. DTC114EUA 0~0.1 0.15 0.45+ −0.05 ROHM : SMT3 EIAJ : SC-59 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions Abbreviated symbol : 24 0.3Min. (3) (1) GND (2) IN (3) OUT 5 ROHM : SPT EIAJ : SC-72 0.4 2.5 + −0.1 (1) (2) (3) 0.5 0.15 0.45 + −0.05 (1) GND (2) OUT (3) IN DTC114EM / DTC114EE / DTC114EUA DTC114ECA / DTC114EKA / DTC114ESA Transistors !Absolute maximum ratings (Ta=25°C) Parameter Limits(DTC114E Symbol M E ) UA Unit CA KA SA Supply voltage VCC 50 V Input voltage VIN −10~+40 V IO 50 IC(Max.) 100 Output current mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 150 200 300 mW !Electrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 0.88 mA VI=5V Input current Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=10mA IO/II=10mA/0.5mA IO(off) − − 0.5 µA VCC=50V, VI=0V DC current gain GI 30 − − − VO=5V, IO=5mA Input resistance R1 7 10 13 kΩ Resistance ratio R2/R1 0.8 1 1.2 − fT − 250 − MHz Output current Transition frequency − − VCE=10V, IE=−5mA, f=100MHz ∗ Transition frequency of the device !Packaging specifications Type Package VMT3 EMT3 UMT3 SST3 SMT3 SPT Packaging type Taping Taping Taping Taping Taping Taping Code T2L TL T106 T116 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 3000 5000 − − − − − − − − − − − − − − DTC114EM DTC114EE − DTC114EUA − − DTC114ECA − − − DTC114EKA − − − − DTC114ESA − − − − − − ∗ DTC114EM / DTC114EE / DTC114EUA DTC114ECA / DTC114EKA / DTC114ESA Transistors !Electrical characteristic curves 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2m 1m 500µ 1k VCC=5V Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 VO=5V 500 DC CURRENT GAIN : GI 100 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current