an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz DU28200M v2.00 Features P&--4 I N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C Parameter I Drain-SourceVoltage I Symbol I Rating ( ( 65 V,, 1 Units 1 I I v Gate-Source Voltage VOS 20 V Drain-Source Current ‘DS 20 A I Power Dissipation 1 P, / 389 1 W Junction Temperature TJ 200 “C StorageTemperature T STG -65 to +150 “C 1 Thermal Resistance Electrical Characteristics at 25°C Parameter Test Conditions Drain-Source Breakdown Voltage BVDss 65 - V V,,=O.O V, I,,=250 mA Drain-Source Leakage Current ‘cm 5.0 n-IA V,,=28.0 V, V,,=O.O V‘ Gate-Source Leakage Current ‘GSS 5.0 pA v,,=20.0 v, V,stO.O v 1 Gate Threshold Voltage I FonvardTransconductance Input Capacitance Output Capacitance COSS ( Reverse Capacitance I Power Gain Drain Efficiency Load MismatchTolerance 1 2.0 vG,rr,, 1 6.0 1 v I v,,=~o.ov, 1,,=500.0 mA GM 2.5 - S V,,=lO.O CISS - 225 pF Vr,,=28.0 V, F=l .OMHz’ 200 pF V,,=28.0 V, F=l .O MHz’ 40 1 pF 1 V,,=28.0 V, F=l.O MHz’ CFSS 1 - ( V, I,,=50 I A, ~v,,=l .O V, 80~ Pulse’ I GP 13 - dB V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz % 55 - % V,,=28.0 V. I,,=1 000 mA, P,, -200.0 W, F=175 MHz VSWR-T - lo:1 - V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz * Per Side Specifications Subject to Change Without Notice. 9-62 North America: M/A-COM, Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Inc. Tel. +44 (1344) 869 595 Fax +44(1344)300 020 RF MOSFET Power Transistor, 2OOW, 28V DU28200M v2.00 Typical Broadband Performance Curves EFFICIENCY GAIN vs FREQUENCY V&3 30 10 -I 25 V l,o=lOO W P,f200 mA vs FREQUENCY VDD=28 V I,,=1000 6or mA P,,=200 W 50 50 100 FREQUENCY 200 150 25 50 loo (MHz) 150 200 FRECXJENCY (MHz) POWER OUTPUT V,,=28 vs POWER INPUT V IDp=l 000 mA 300 z 250 30 100 MHz MHz 5 P 200 MHz 200 5 a cl0 150 100 f f ; . 50 0 0.5 1 2 3 4 5 POWER INPUT (W) Specifications MIA-COM, Subject to Change Without Notice. Inc. North America: 9-63 Tel. (800) Fax (800) 366-2266 618-8883 w Asia/Pacific: Tel. Fax +81 +81 (03) 3226-1671 (03) 3226-1451 m Europe: Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, 2OOW, 28V DU28200M v2.00 Typical Device Impedance Frequency (MHz) Z,N(OHMS) Z LOAD (OHMS) 30 2.7 - j 4.8 7.2 - j 1.9 100 1.6 -j 3.0 5.25 - j 1.4 150 1.5 -j 2.0 5.0 - j 0.7 175 1.6 -j 1.0 5.2 - j 0.6 200 1.8-j0.5 5.5 - j 0.5 I I V,,=28 V, I,,=1000 mA, P0,~200 Watts Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD is the series optimum equivalent load impedance as measured from drain to drain. RF Test Fixture Specifications Subject to Change Without Notice. M/A-COM, Inc. 9-64 North America: Tel. (800) 366-2266 Fax (800) 618-8883 w Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020