AH115 / ECP050G The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier Product Features Product Description x 1800 – 2300 MHz x +28.5 dBm P1dB x +44 dBm Output IP3 x 14 dB Gain @ 1960 MHz x +5V Single Positive Supply x MTTF > 100 Years x Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg. Applications x Mobile Infrastructure x Final Stage Amplifier for Repeaters The AH115 / ECP050 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrow-band tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1-dB power. All devices are 100% RF and DC tested. The AH115 / ECP050 is available in lead-free/green/RoHS-compliant SOIC-8 package. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH115 / ECP050 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations. Specifications (1) Parameters Min MHz MHz dB dB dB dBm dBm 1800 @ -45 dBc ACPR, 1960 MHz 12.5 +26.5 +41 dBm Typ 8 2 7 3 6 4 5 Function Vref Input / Base Output / Collector Vbias GND N/C or GND Max Parameters 2300 2140 14.4 23 8 +28.5 +42 Frequency Gain S11 S22 Output P1dB Output IP3 (2) IS-95A Channel Power MHz dB dB dB dBm dBm 1960 14.3 -12 -8 +28.3 +44 dBm +22.5 +22.5 W-CDMA Channel Power dBm W-CDMA Channel Power dBm +20 Noise Figure Operating Current Range (3) Device Voltage dB mA V 5.3 250 +5 @ -45 dBc ACLR, 2140 MHz 1 Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Typical Performance (1) Units Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power Functional Diagram 200 Units @ -45 dBc ACPR, @ -45 dBc ACLR Noise Figure Supply Bias dB Typical 2140 14.4 -23 -8 +28.5 +42 +20 5 5.3 +5 V @ 250 mA 300 1. Test conditions unless otherwise noted. 25ºC, Vsupply = +5 V in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Ordering Information Rating Part No. -40 to +85 qC -65 to +150 qC +22 dBm +8 V 400 mA 2W +250 qC Description ½ Watt, High Linearity InGaP HBT Amplifier AH115-S8 (lead-tin SOIC-8 Pkg) ½ Watt, High Linearity InGaP HBT Amplifier ECP050G (lead-tin SOIC-8 Pkg) ½ Watt, High Linearity InGaP HBT Amplifier AH115-S8G AH115-S8PCB1960 AH115-S8PCB2140 (lead-free/green/RoHS-compliant SOIC-8 Pkg) 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 1 of 7 May 2005 AH115 / ECP050G The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system) S22 0.8 2. 0 2. 0 0 3. 0 3. 0 4. 0 4. 25 0 5. 0.2 20 5. 0 0. 2 10 .0 10 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 15 0.2 10.0 -10.0 -1 0.0 -0 .8 Sw p Min 0.05GHz -1.0 -0 .6 Swp Min 0.05GHz .0 -2 .4 -0 .0 -2 .4 -0 2.5 -1.0 2 -0.8 1 1.5 Frequency (GHz) -0 .6 0.5 -3 .0 0 -4 .0 -5. 0 0 2 -0 . -3 .0 2 -0. 5 -4 .0 -5 . 0 G ain (dB) 6 0. 1.0 0. 8 6 0. DB(|S[2,1]|) 0. 4 DB(GMax) 30 Sw p Max 5.05GHz 0. 4 35 Swp Max 5.05GHz 1.0 S11 Gain and Maximum Stable Gain Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -2.11 -1.59 -1.51 -1.45 -1.58 -1.78 -1.96 -2.46 -3.30 -4.70 -8.15 -19.01 -9.59 -4.09 -1.99 -1.12 -0.72 -172.90 -178.94 173.71 163.84 153.68 144.31 134.21 123.44 111.21 92.57 78.58 93.29 177.56 159.30 141.65 127.57 116.11 25.10 21.15 17.75 15.23 13.69 12.77 11.94 11.36 11.17 11.39 11.64 11.51 10.35 7.87 4.95 1.97 -0.88 133.84 126.67 124.19 111.50 98.94 84.57 69.70 55.57 40.93 22.80 1.64 -25.24 -55.97 -83.78 -105.90 -122.86 -136.93 -36.03 -35.22 -34.29 -34.45 -33.58 -32.84 -32.77 -31.79 -31.12 -30.30 -29.47 -29.31 -30.51 -32.59 -33.96 -34.68 -35.64 31.44 15.04 7.30 -2.16 -2.99 -12.80 -18.76 -30.73 -45.14 -61.92 -83.99 -112.79 -150.45 177.62 137.14 109.27 81.83 -2.06 -2.73 -2.80 -2.73 -1.96 -1.68 -1.85 -2.14 -2.30 -2.52 -2.43 -1.84 -1.22 -1.06 -1.07 -1.19 -1.44 -105.55 -138.75 -160.44 -174.00 -179.13 172.00 166.98 164.05 163.07 164.84 164.25 162.38 155.68 147.58 139.74 132.15 125.05 Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 2 of 7 May 2005 AH115 / ECP050G The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier 1960 MHz Application Circuit (AH115-S8PCB1960) Typical RF Performance at 25qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 1960 MHz 14.3 dB -12 dB -8 dB +28.3 dBm Channel Power +22.5 dBm RES ID=R1 R=100 Ohm (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current +85°C -10 -15 +25°C 85°C -40°C -20 -40°C 1970 1980 -25 1930 1990 1940 1950 Frequency (MHz) Noise Figure vs. Frequency 6 29 P1 dB (dBm) 5 4 +25°C +85°C 1 -40°C 0 1930 1940 1960 1970 1980 1970 1980 -10 -15 1940 1950 +25°C 26 +85°C +85°C -65 -40°C -40°C -70 1940 1950 1960 1970 1980 1990 15 16 17 19 20 21 22 23 24 OIP3 vs. Temperature freq=1960,1961 MHz, +11 dBm / tone 44 44 OIP3 (dBm) 46 44 OIP3 (dBm) 18 Output Channel Power (dBm) 46 42 40 38 20 1990 +25°C -60 +25°C, +11 dBm / tone 18 1980 -55 OIP3 vs. Frequency 36 1970 -50 Frequency (MHz) 38 1960 ACPR vs. Channel Power 46 12 14 16 Output Power (dBm) -40°C Frequency (MHz) 27 freq=1960, 1961 MHz,+ 25°C 10 +85°C -45 OIP3 vs. Output Power 8 +25°C -25 1930 1990 28 Frequency (MHz) 40 CAP ID=C3 C=100 pF -40 24 1930 1990 42 CAP ID=C9 C=2.0 pF IS-95, 9 ch,Fwd, ±885 KHz offset, 30 KHz Meas BW, 1960 MHz 25 1950 TLINP ID=FR-1 Z0=50 Ohm L=210 mil Eeff=3.16 Loss=0 F0=0 MHz 8 P1 dB vs. Frequency 30 2 1960 Frequency (MHz) 7 3 7 -20 ACPR (dBc) 1960 S22 (dB) S11 (dB) S21 (dB) -5 1950 3 PORT P=2 Z=50 Ohm S22 vs. Frequency -5 1940 6 S11 vs. Freqency 14 6 1930 2 IND ID=L1 L=18 nH C8 is placed at silkscreen marker ‘A’ or center of component placed at 1.8 deg. @ 1960 MHz away from pin 3. C9 is placed at the silkscreen marker ‘4’ or center of component placed at 20 deg. @1960 MHz away from pin 6. 0 10 5 CAP ID=C8 C=.8 pF 0 8 NF (dB) SUBCKT NET="AH115" 1 4 CAP ID=C2 C=22 pF S21 vs. Frequency OIP3 (dBm) TLINP ID=FR-2 Z0=50 Ohm L=25 mil Eeff=3.16 Loss=0 F0=0 MHz RES ID=R3 R=51 Ohm CAP ID=C1 C=22 pF PORT P=1 Z=50 Ohm CAP ID=C6 C=10 pF 16 +25°C CAP ID=C4 C=10000000 pF CAP ID=C7 C=1000 pF CAP ID=C5 C=1000 pF 5 dB +5 V 250 mA 12 D1 = +5.6 V RES ID=R2 R=22 Ohm +44 dBm (+11 dBm / tone, 1 MHz spacing) Vcc = +5 V RES ID=R4 R=0 Ohm 42 40 38 36 1930 36 1940 1950 1960 1970 1980 1990 -40 Frequency (MHz) -15 10 35 60 85 Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 3 of 7 May 2005 AH115 / ECP050G The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit (AH115-S8PCB2140) Typical RF Performance at 25qC 2140 MHz 14.4 dB -23 dB -8 dB +28.5 dBm W-CDMA Channel Power +20 dBm Noise Figure Device / Supply Voltage Quiescent Current 5.3 dB +5 V 250 mA (@-45 dBc ACLR) +85°C 2140 2150 2160 -5 -10 -40°C -15 2120 -40 2130 2140 2150 2160 4 +85°C 1 -40°C 2120 2150 -45 +85°C -50 -40°C -55 2160 15 2170 16 17 18 19 20 20 2110 21 39 2120 2130 45 45 43 43 41 39 2170 2150 2170 freq. = 2140, 2141 MHz, 25°C 41 39 37 35 35 2160 2140 OIP3 vs. Output Power 37 37 2160 -40°C Frequency (MHz) OIP3 (dBm) OIP3 (dBm) 41 2170 +85°C OIP3 vs. Temperature 43 2160 +25°C 24 freq. = 2140, 2141, +11 dBm / tone 45 2150 26 Output Channel Power (dBm) +25°C, +11 dBm / tone 2140 P1 dB vs. Frequency 22 OIP3 vs. Frequency 2130 2140 2150 Frequency (MHz) 2130 28 +25°C Frequency (MHz) 2120 2120 30 -65 2140 -40°C Frequency (MHz) -60 2130 +85°C -25 2110 2170 P1 dB (dBm) ACPR (dBc) 6 2 +25°C -15 ACPR vs. Channel Power 5 CAP ID=C3 C=100 pF -10 -20 -35 + 25°C CAP ID =C9 C=1.8 pF -5 3GPP W-CDMA Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz 3 TLINP ID=FR-1 Z0=50 Ohm L=160 mil Eeff=3.16 Loss=0 F0=0 MHz Frequency (MHz) 7 NF (dB) 8 +85°C -25 2110 2170 8 OIP3 (dBm) 7 4 0 Noise Figure vs. Frequency 35 2110 3 PORT P=2 Z=50 Ohm S22 vs. Frequency +25°C Frequency (MHz) 0 2110 6 -20 -40°C 2130 2 S11 vs. Frequency +25°C 2120 5 0 S11 (dB) S21 (dB) 6 2110 IND ID=L1 L=18 nH 1 C9 is placed at the silkscreen marker ‘3’ or center of component placed at 13 deg. @2140 MHz away from pin 6. 14 8 SUBCKT NET="AH115" CAP ID=C1 C=22 pF CAP ID =C2 C=22 pF 16 10 CAP ID=C 4 C=10000000 pF CAP ID=C7 C=1000 pF C AP ID=C 6 C =10 pF RES ID=R3 R=51 Ohm PORT P=1 Z=50 Ohm S21 vs. Frequency 12 D1 = +5.6 V CAP ID=C5 C=1000 pF +42 dBm (+11 dBm / tone, 1 MHz spacing) Vcc = +5 V RES ID=R4 R=0 Ohm RES ID=R2 R=22 Ohm S22 (dB) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 RES ID =R1 R=100 Ohm -40 -15 10 35 Temperature ( °C) 60 85 6 8 10 12 14 16 18 20 Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 4 of 7 May 2005 AH115 / ECP050G The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier AH115-S8 (SOIC-8 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an “AH115-S8” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Land Pattern Thermal Specifications Rating Operating Case Temperature Thermal Resistance (1), Rth Junction Temperature (2), Tjc -40 to +85q C 62q C / W 162q C MTTF vs. GND Tab Temperature 1000000 Notes: 1. The thermal resistance is referenced from the junction-tocase at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF (million hrs) Parameter 100000 10000 1000 100 50 60 70 80 90 100 Tab Temperature (° C ) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 5 of 7 May 2005 AH115 / ECP050G The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier AH115-S8G (Green / Lead-free SOIC-8 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The component will be marked with an “ AH115-S8G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “ Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Land Pattern Thermal Specifications Rating Operating Case Temperature Thermal Resistance (1), Rth Junction Temperature (2), Tjc -40 to +85q C 62q C / W 162q C MTTF vs. GND Tab Temperature 1000000 Notes: 1. The thermal resistance is referenced from the junction-tocase at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF (million hrs) Parameter 100000 10000 1000 100 50 60 70 80 90 100 Tab Temperature (° C ) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 6 of 7 May 2005 AH115 / ECP050G The Communications Edge TM Product Information ½ Watt, High Linearity InGaP HBT Amplifier ECP050G (SOIC-8 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an “ ECP050G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “ Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Land Pattern Thermal Specifications Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85q C 62q C / W 162q C Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF vs. GND Tab Temperature 1000000 MTTF (million hrs) Parameter 100000 10000 1000 100 50 60 70 80 90 100 Tab Temperature (° C ) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 7 of 7 May 2005