EIC5359-8 5.30-5.90GHz, 8W Internally Matched Power FET • • • • • • • 5.30-5.90 GHz BANDWIDTH Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 33% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm Hermetic Metal Flange Package Excelics EIC5359-8 YM SN ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIC5359-8 SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Compression f=5.30-5.90GHz, Vds=10V, Idsq=2200mA 38.5 39.5 dBm G1dB Gain at 1dB Compression f=5.30-5.90GHz, Vds=10V, Idsq=2200mA 9 10 dB PAE Power Added Efficiency at 1dB compression f=5.30-5.90GHz, Vds=10V, Idsq=2200mA 33 % Id1dB Drain Current at 1dB Compression 2200 2600 mA rd IM3 Output 3 Order Intermodulation Distortion f=5.90GHz, ∆f=10MHz 2-Tone Test. Pout=28.5dBm S.C.L Idss Saturated Drain Current Vds=3V, Vgs=0V 4000 4500 mA Vp Pinch-off Voltage Vds=3V, Ids=40mA -2.5 -4 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 3.5 4 -43 -46 dBc o C/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS PARAMETERS CONTINUOUS1,2 Vds Drain-Source Voltage 10V Vgs Gate-Source Voltage -4.5V Ids Drain Current Idss Igsf Forward Gate Current 80mA Pin Input Power @ 3dB Compression Tch Channel Temperature 150 oC Tstg Storage Temperature -65 to +150 oC Pt Total Power Dissipation 32W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com