EXCELICS EIC5359-8

EIC5359-8
5.30-5.90GHz, 8W Internally Matched Power FET
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5.30-5.90 GHz BANDWIDTH
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
10 dB Power Gain at 1dB Compression
33% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm
Hermetic Metal Flange Package
Excelics
EIC5359-8
YM
SN
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIC5359-8
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P1dB
Output Power at 1dB Compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
38.5
39.5
dBm
G1dB
Gain at 1dB Compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
9
10
dB
PAE
Power Added Efficiency at 1dB compression
f=5.30-5.90GHz, Vds=10V, Idsq=2200mA
33
%
Id1dB
Drain Current at 1dB Compression
2200
2600
mA
rd
IM3
Output 3 Order Intermodulation Distortion
f=5.90GHz, ∆f=10MHz 2-Tone Test. Pout=28.5dBm S.C.L
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
4000
4500
mA
Vp
Pinch-off Voltage
Vds=3V, Ids=40mA
-2.5
-4
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
3.5
4
-43
-46
dBc
o
C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
PARAMETERS
CONTINUOUS1,2
Vds
Drain-Source Voltage
10V
Vgs
Gate-Source Voltage
-4.5V
Ids
Drain Current
Idss
Igsf
Forward Gate Current
80mA
Pin
Input Power
@ 3dB Compression
Tch
Channel Temperature
150 oC
Tstg
Storage Temperature
-65 to +150 oC
Pt
Total Power Dissipation
32W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com