EL5211A ® Data Sheet July 23, 2009 60MHz Rail-to-Rail Input-Output Op Amp Features The EL5211A is a low power, high voltage, rail-to-rail input-output amplifier. The EL5211A contains two amplifiers. Operating on nominal supplies ranging from 5V to 15V while consuming only 2.5mA per amplifier, the EL5211A has a bandwidth of 60MHz (-3dB) and provides common-mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables the EL5211A to offer maximum dynamic range at any supply voltage. • 60MHz (-3dB) bandwidth The EL5211A also features fast slewing and settling times, as well as a high continuous output drive capability of 65mA (sink and source). These features make the EL5211A ideal for high speed filtering and signal conditioning application. Other applications include battery-powered, portable devices and anywhere low power consumption is important. • Rail-to-rail output swing The EL5211A is available in the 8 Ld HMSOP package, features a standard operational amplifier pinout, and is specified for operation over a temperature range of -40°C to +85°C. • TFT-LCD panels FN6143.2 • Supply voltage = 4.5V to 16.5V • Low supply current (per amplifier) = 2.5mA • High slew rate = 75V/µs • Unity-gain stable • Beyond the rails input capability • ±110mA output short current • Pb-free (RoHS compliant) Applications • VCOM amplifiers • Drivers for A/D converters • Data acquisition Ordering Information PART NUMBER (Note) PART MARKING • Video processing PACKAGE (Pb-free) PKG. DWG. # EL5211AIYEZ BBLAA 8 Ld HMSOP (3.0mm) MDP0050 EL5211AIYEZ-T7* BBLAA 8 Ld HMSOP (3.0mm) MDP0050 EL5211AIYEZ-T13* BBLAA 8 Ld HMSOP (3.0mm) MDP0050 • Audio processing • Active filters • Test equipment • Battery-powered applications • Portable equipment Pinout *Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. EL5211A (8 LD HMSOP) TOP VIEW VOUTA 1 VINA- 2 VINA+ 3 VS- 4 1 8 VS+ 7 VOUTB + + 6 VINB5 VINB+ CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2005, 2007, 2009. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. EL5211A Absolute Maximum Ratings (TA = +25°C) Thermal Information Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS +0.5V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . ±65mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 1kΩ to 0V, TA = +25°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. DESCRIPTION CONDITIONS MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 1) IB Input Bias Current RIN Input Impedance 1 GΩ CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -5.5V to 5.5V 50 70 dB AVOL Open-Loop Gain -4.5V ≤ VOUT ≤ 4.5V 60 70 dB VCM = 0V 7 VCM = 0V 2 -5.5 µV/°C 60 +5.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT -4.9 4.8 -4.8 V 4.9 V Short-Circuit Current ±110 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V IS Supply Current No load 5 60 7.5 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 2) -4.0V ≤ VOUT ≤ 4.0V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.17 % dP Differential Phase (Note 3) RF = RG = 1kΩ and VOUT = 1.4V 0.24 ° NOTES: 1. Measured over operating temperature range. 2. Slew rate is measured on rising and falling edges. 3. NTSC signal generator used. 2 FN6143.2 July 23, 2009 EL5211A Electrical Specifications PARAMETER VS+ = +5V, VS- = 0V, RL = 1kΩ to 2.5V, TA = +25°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. DESCRIPTION CONDITION MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 4) IB Input Bias Current RIN Input Impedance 1 GΩ CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 5.5V 45 66 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 4.5V 60 70 dB VCM = 2.5V 7 VCM = 2.5V 2 -0.5 µV/°C 60 +5.5 nA V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT 100 4.8 200 mV 4.9 V Short-Circuit Current ±110 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current No load 5 60 7.5 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 5) 1V ≤ VOUT ≤ 4V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 6) RF = RG = 1kΩ and VOUT = 1.4V 0.17 % dP Differential Phase (Note 6) RF = RG = 1kΩ and VOUT = 1.4V 0.24 ° NOTES: 4. Measured over operating temperature range. 5. Slew rate is measured on rising and falling edges. 6. NTSC signal generator used. Electrical Specifications PARAMETER VS+ = +15V, VS- = 0V, RL = 1kΩ to 7.5V, TA = +25°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. DESCRIPTION CONDITION MIN TYP MAX UNIT 3 15 mV INPUT CHARACTERISTICS VOS Input Offset Voltage TCVOS Average Offset Voltage Drift (Note 7) IB Input Bias Current RIN Input Impedance 3 VCM = 7.5V 7 VCM = 7.5V 2 1 µV/°C 60 nA GΩ FN6143.2 July 23, 2009 EL5211A Electrical Specifications PARAMETER VS+ = +15V, VS- = 0V, RL = 1kΩ to 7.5V, TA = +25°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. (Continued) DESCRIPTION CONDITION MIN TYP MAX UNIT CIN Input Capacitance 2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio for VIN from -0.5V to 15.5V 53 72 dB AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 14.5V 60 70 dB -0.5 +15.5 V OUTPUT CHARACTERISTICS VOL Output Swing Low IL = -5mA VOH Output Swing High IL = 5mA ISC IOUT 100 14.8 200 mV 14.9 V Short-Circuit Current ±110 mA Output Current ±65 mA 80 dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V IS Supply Current No load 5 60 7.5 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 8) 1V ≤ VOUT ≤ 14V, 20% to 80% 75 V/µs tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 80 ns BW -3dB Bandwidth 60 MHz GBWP Gain-Bandwidth Product 32 MHz PM Phase Margin 50 ° CS Channel Separation f = 5MHz 110 dB dG Differential Gain (Note 9) RF = RG = 1kΩ and VOUT = 1.4V 0.16 % dP Differential Phase (Note 9) RF = RG = 1kΩ and VOUT = 1.4V 0.22 ° NOTES: 7. Measured over operating temperature range. 8. Slew rate is measured on rising and falling edges. 9. NTSC signal generator used. Typical Performance Curves 25 VS = ±5V TA = +25°C TYPICAL PRODUCTION DISTRIBUTION 400 300 200 100 VS = ±5V QUANTITY (AMPLIFIERS) TYPICAL PRODUCTION DISTRIBUTION 20 15 10 5 4 21 19 17 15 13 11 9 7 5 12 8 10 6 4 2 -0 -2 -4 -6 -8 -10 -12 INPUT OFFSET VOLTAGE (mV) FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION 3 0 0 1 QUANTITY (AMPLIFIERS) 500 INPUT OFFSET VOLTAGE DRIFT, TCVOS (µV/°C) FIGURE 2. INPUT OFFSET VOLTAGE DRIFT FN6143.2 July 23, 2009 EL5211A Typical Performance Curves (Continued) 0.008 INPUT BIAS CURRENT (µA) INPUT OFFSET VOLTAGE (mV) 2.0 1.5 1.0 0.5 0 -0.5 -50 -10 30 70 110 VS = ±5V 0.004 0 -0.004 -0.008 -0.012 -50 150 -10 TEMPERATURE (°C) OUTPUT LOW VOLTAGE (V) OUTPUT HIGH VOLTAGE (V) 4.92 4.90 4.88 -10 30 70 150 110 VS = ±5V IOUT = 5mA -4.87 -4.89 -4.91 -4.93 -4.95 -50 150 -10 TEMPERATURE (°C) 30 70 110 150 TEMPERATURE (°C) FIGURE 5. OUTPUT HIGH VOLTAGE vs TEMPERATURE FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE 75 78 VS = ±5V RL = 1kΩ 70 65 VS = ±5V 77 SLEW RATE (V/µs) OPEN-LOOP GAIN (dB) 110 FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE -4.85 VS = ±5V IOUT = 5mA 4.94 4.86 -50 70 TEMPERATURE (°C) FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE 4.96 30 76 75 74 73 60 -50 -10 30 70 110 150 TEMPERATURE (°C) FIGURE 7. OPEN-LOOP GAIN vs TEMPERATURE 5 72 -50 -10 30 70 110 150 TEMPERATURE (°C) FIGURE 8. SLEW RATE vs TEMPERATURE FN6143.2 July 23, 2009 EL5211A Typical Performance Curves (Continued) 2.70 TA = +25°C 2.7 SUPPLY CURRENT (mA) 2.5 2.3 2.1 1.9 1.7 1.5 4 8 12 16 VS = ±5V 2.65 2.60 2.55 2.50 2.45 2.40 -50 20 -10 SUPPLY VOLTAGE (V) 110 150 FIGURE 10. SUPPLY CURRENT PER AMPLIFIER vs TEMPERATURE 0 0.30 DIFFERENTIAL PHASE (°) -0.02 -0.04 -0.06 -0.08 -0.10 -0.12 -0.14 V = ±5V S -0.16 AV = 2 RL = 1kΩ -0.18 0 0.25 0.20 0.15 0.10 0.05 0 100 0 200 100 IRE -30 FIGURE 12. DIFFERENTIAL PHASE 80 VS = ±5V AV = 2 RL = 1kΩ FREQ = 1MHz -40 GAIN (dB) 2nd HD -70 -90 4 6 8 10 VOP-P (V) FIGURE 13. HARMONIC DISTORTION vs VOP-P 6 40 20 130 PHASE 70 0 3rd HD 2 190 GAIN -60 0 250 60 -50 -80 200 IRE FIGURE 11. DIFFERENTIAL GAIN DISTORTION (dB) 70 TEMPERATURE (°C) FIGURE 9. SUPPLY CURRENT PER AMPLIFIER vs SUPPLY VOLTAGE DIFFERENTIAL GAIN (%) 30 -20 1k PHASE (°) SUPPLY CURRENT (mA) 2.9 10 10k 100k 1M 10M -50 100M FREQUENCY (Hz) FIGURE 14. OPEN LOOP GAIN AND PHASE FN6143.2 July 23, 2009 EL5211A MAGNITUDE (NORMALIZED) (dB) 5 3 VS = ±5V AV = 1 CLOAD = 0pF MAGNITUDE (NORMALIZED) (dB) Typical Performance Curves (Continued) 1kΩ 1 -1 560Ω -3 150Ω -5 100k 1M 100pF 15 1000pF 47pF 10pF 5 -5 -15 VS = ±5V AV = 1 RL = 1kΩ -25 100k 100M 10M 25 1M FREQUENCY (Hz) FIGURE 16. FREQUENCY RESPONSE FOR VARIOUS CL MAXIMUM OUTPUT SWING (VP-P) OUTPUT IMPEDANCE (Ω) 400 350 300 250 200 150 100 50 100k 1M 100M FREQUENCY (Hz) FIGURE 15. FREQUENCY RESPONSE FOR VARIOUS RL 0 10k 10M 10M 100M 12 10 8 6 4 VS = ±5V 2 AV = 1 RL = 1kΩ DISTORTION <1% 0 10k 100k 1M 10M 100M FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 17. CLOSED LOOP OUTPUT IMPEDANCE FIGURE 18. MAXIMUM OUTPUT SWING vs FREQUENCY -15 -80 PSRR+ PSRR- -60 PSRR (dB) CMRR (dB) -25 -35 -45 -40 -20 -55 VS = ±5V TA = +25°C -65 1k 10k 100k 1M FREQUENCY (Hz) FIGURE 19. CMRR 7 10M 100M 0 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FIGURE 20. PSRR FN6143.2 July 23, 2009 EL5211A Typical Performance Curves (Continued) -60 DUAL MEASURED CH A TO B QUAD MEASURED CH A TO D OR B TO C -80 OTHER COMBINATIONS YIELD IMPROVED REJECTION 100 XTALK (dB) VOLTAGE NOISE (nV/√Hz) 1k 10 -100 -120 VS = ±5V RL = 1kΩ AV = 1 VIN = 110mVRMS -140 1 100 1k 10k 100k 1M 10M -160 1k 100M 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 21. INPUT VOLTAGE NOISE SPECTRAL DENSITY OVERSHOOT (%) 80 FIGURE 22. CHANNEL SEPARATION 5 VS = ±5V AV = 1 RL = 1kΩ VIN = ±50mV TA = +25°C 4 3 STEP SIZE (V) 100 10M 30M 1M 60 40 VS = ±5V AV = 1 RL = 1kΩ 0.1% 2 1 0 -1 -2 0.1% -3 20 -4 0 10 100 1k LOAD CAPACITANCE (pF) FIGURE 23. SMALL-SIGNAL OVERSHOOT vs LOAD CAPACITANCE -5 55 65 75 85 95 105 SETTLING TIME (ns) FIGURE 24. SETTLING TIME vs STEP SIZE VS = ±5V TA = +25°C AV = 1 RL = 1kΩ VS = ±5V TA = +25°C AV = 1 RL = 1kΩ 100mV STEP 1V STEP 50ns/DIV FIGURE 25. LARGE SIGNAL TRANSIENT RESPONSE 8 50ns/DIV FIGURE 26. SMALL SIGNAL TRANSIENT RESPONSE FN6143.2 July 23, 2009 EL5211A Pin Descriptions PIN NUMBER PIN NAME 1 VOUTA FUNCTION EQUIVALENT CIRCUIT Amplifier A output VS+ VS- GND CIRCUIT 1 2 VINA- Amplifier A inverting input VS+ VS- CIRCUIT 2 3 VINA+ Amplifier A non-inverting input (Reference Circuit 2) 4 VS- 5 VINB+ Amplifier B non-inverting input (Reference Circuit 2) 6 VINB- Amplifier B inverting input (Reference Circuit 2) 7 VOUTB Amplifier B output (Reference Circuit 1) 8 VS+ Negative power supply Positive power supply The EL5211A voltage feedback amplifier is fabricated using a high voltage CMOS process. It exhibits rail-to-rail input and output capability, is unity gain stable, and has low power consumption (2.5mA per amplifier). These features make the EL5211A ideal for a wide range of general-purpose applications. Connected in voltage follower mode and driving a load of 1kΩ, the EL5211A has a -3dB bandwidth of 60MHz while maintaining a 75V/µs slew rate. 5V Operating Voltage, Input, and Output The EL5211A is specified with a single nominal supply voltage from 5V to 15V or a split supply with its total range from 5V to 15V. Correct operation is guaranteed for a supply range of 4.5V to 16.5V. Most EL5211A specifications are stable over both the full supply range and operating temperatures of -40°C to +85°C. Parameter variations with operating voltage and/or temperature are shown in the “Typical Performance Curves” on page 4. The input common-mode voltage range of the EL5211A extends 500mV beyond the supply rails. The output swings of the EL5211A typically extend to within 100mV of positive and negative supply rails with load currents of 5mA. Decreasing load currents will extend the output voltage range even closer to the supply rails. Figure 27 shows the 9 10µs INPUT Product Description input and output waveforms for the device in the unity-gain configuration. Operation is from ±5V supply with a 1kΩ load connected to GND. The input is a 10VP-P sinusoid. The output voltage is approximately 9.8VP-P. 5V VS = ±5V TA = +25°C AV = 1 VIN = 10VP- OUTPUT Applications Information FIGURE 27. OPERATION WITH RAIL-TO-RAIL INPUT AND OUTPUT Short Circuit Current Limit The EL5211A will limit the short circuit current to ±110mA if the output is directly shorted to the positive or the negative supply. If an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. Maximum reliability is maintained if the output continuous current never exceeds ±65mA. This limit is set by the design of the internal metal interconnects. FN6143.2 July 23, 2009 EL5211A Output Phase Reversal when sinking, The EL5211A is immune to phase reversal as long as the input voltage is limited from VS- -0.5V to VS+ +0.5V. Figure 28 shows a photo of the output of the device with the input voltage driven beyond the supply rails. Although the device's output will not change phase, the input's overvoltage should be avoided. If an input voltage exceeds supply voltage by more than 0.6V, electrostatic protection diodes placed in the input stage of the device begin to conduct and overvoltage damage could occur. where: 1V • VS = Total supply voltage • ISMAX = Maximum supply current per amplifier • VOUTi = Maximum output voltage of the application • ILOADi = Load current If we set the two PDMAX equations equal to each other, we can solve for RLOADi to avoid device overheat. Figures 29 and 30 provide a convenient way to see if the device will overheat. The maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. By using the Equation 3, it is a simple matter to see if PDMAX exceeds the device's power derating curves. To ensure proper operation, it is important to observe the recommended derating curves shown in Figures 29 and 30. 10µs VS = ±2.5V TA = +25°C AV = 1 VIN = 6VP-P 1V • i = 1 to 2 for dual and 1 to 4 for quad JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD FIGURE 28. OPERATION WITH BEYOND-THE-RAILS INPUT Power Dissipation With the high-output drive capability of the EL5211A amplifier, it is possible to exceed the +150°C absolute maximum junction temperature under certain load current conditions. Therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area. The maximum power dissipation allowed in a package is determined according to Equation 1: T JMAX – T AMAX P DMAX = --------------------------------------------Θ JA POWER DISSIPATION (W) 0.6 556mW 0.5 HMSOP8 θJA = 225°C/W 0.4 0.3 0.2 0.1 0 0 25 50 75 85 100 125 AMBIENT TEMPERATURE (°C) FIGURE 29. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE (EQ. 1) where: JEDEC JESD51-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 2.5 • TJMAX = Maximum junction temperature • ΘJA = Thermal resistance of the package • PDMAX = Maximum power dissipation in the package The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total power supply voltage, plus the power in the IC due to the loads, or: P DMAX = Σi [ V S × I SMAX + ( V S + – V OUT i ) × I LOAD i ] POWER DISSIPATION (W) 2.16W • TAMAX = Maximum ambient temperature 2.0 HMSOP8 θJA = 58°C/W 1.5 1.0 0.5 0 (EQ. 2) 0 25 50 75 85 100 125 AMBIENT TEMPERATURE (°C) when sourcing, and: P DMAX = Σi [ V S × I SMAX + ( V OUT i – V S - ) × I LOAD i ] 10 FIGURE 30. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE (EQ. 3) FN6143.2 July 23, 2009 EL5211A Unused Amplifiers It is recommended that any unused amplifiers be configured as a unity gain follower. The inverting input should be directly connected to the output and the non-inverting input tied to the ground plane. Power Supply Bypassing and Printed Circuit Board Layout The EL5211A can provide gain at high frequency. As with any high-frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. For normal single supply operation, where the VS- pin is connected to ground, a 0.1µF ceramic capacitor should be placed from VS+ to pin to VS- pin. A 4.7µF tantalum capacitor should then be connected in parallel, placed in the region of the amplifier. One 4.7µF capacitor may be used for multiple devices. This same capacitor combination should be placed at each supply pin to ground if split supplies are to be used. 11 FN6143.2 July 23, 2009 EL5211A HMSOP (Heat-Sink MSOP) Package Family E B 0.25 M C A B E1 MDP0050 HMSOP (HEAT-SINK MSOP) PACKAGE FAMILY MILLIMETERS 1 N SYMBOL D (N/2)+1 (N/2) PIN #1 I.D. A HMSOP8 HMSOP10 TOLERANCE NOTES A 1.00 1.00 Max. - A1 0.075 0.075 +0.025/-0.050 - A2 0.86 0.86 ±0.09 - b 0.30 0.20 +0.07/-0.08 - c 0.15 0.15 ±0.05 - D 3.00 3.00 ±0.10 1, 3 D1 1.85 1.85 Reference - E 4.90 4.90 ±0.15 - E1 3.00 3.00 ±0.10 2, 3 E2 1.73 1.73 Reference - e 0.65 0.50 Basic - L 0.55 0.55 ±0.15 - L1 0.95 0.95 Basic - N 8 10 Reference - TOP VIEW E2 EXPOSED THERMAL PAD D1 BOTTOM VIEW Rev. 1 2/07 e NOTES: H 1. Plastic or metal protrusions of 0.15mm maximum per side are not included. C SEATING PLANE 2. Plastic interlead protrusions of 0.25mm maximum per side are not included. 0.08 M C A B b 0.10 C N LEADS 3. Dimensions “D” and “E1” are measured at Datum Plane “H”. 4. Dimensioning and tolerancing per ASME Y14.5M-1994. SIDE VIEW L1 A c END VIEW SEE DETAIL "X" A2 GAUGE 0.25 PLANE L 3¬× ¬± A1 DETAIL X All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 12 FN6143.2 July 23, 2009