EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.8V) makes this device ideal for portable equipment. Each lead has same dimensions Abbreviated symbol : K06 zPackaging specifications Package Type zEquivalent circuit (6) Taping Code T2R Basic ordering unit (pieces) 8000 (5) Gate Protection Diode ∗ (4) Tr1 EM6K6 Tr2 zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Drain−source voltage Symbol Limits Unit VDSS 20 V VGSS ±8 V Continuous ID ±300 mA Pulsed IDP ∗1 ±600 mA ∗2 150 mW / TOTAL 120 mW / ELEMENT Gate−source voltage Drain current (1) Total power dissipation PD Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗ Gate Protection Diode (2) (3) (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits 833 1042 Source Gate Drain Source Gate Drain Unit °C/W / TOTAL °C/W / ELEMENT ∗ Each terminal mounted on a recommended land 1/3 EM6K6 Transistor zElectrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit IGSS − − ±10 µA VGS=±8V, VDS=0V V(BR)DSS 20 − − V ID=1mA, VGS=0V Gate-source leakage Drain-source breakdown voltage Conditions IDSS − − 1.0 µA VDS=20V, VGS=0V Gate threshold voltage VGS(th) 0.3 − 1.0 V VDS=10V, ID=1mA Static drain-source on-state resistance − 0.7 1.0 RDS(on)∗ Ω ID=300mA, VGS=4.0V − 0.8 1.2 Ω ID=300mA, VGS=2.5V − 1.0 1.4 Ω ID=300mA, VGS=1.8V 400 − − ms ID=300mA, VDS=10V Zero gate voltage drain current |Yfs| ∗ Forward transfer admittance Input capacitance Ciss − 25 − pF VDS=10V Output capacitance Coss − 10 − pF VGS=0V Reverse transfer capacitance Crss − 10 − pF f=1MHz Turn-on delay time td(on) ∗ − 5 − ns ID=150mA, VDD tr ∗ − 10 − ns VGS=4.0V td(off) ∗ tf ∗ − 15 − ns RL=67Ω − 10 − ns RG=10Ω Rise time Turn-off delay time Fall time 10V ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Symbol VSD ∗ Forward voltage Min. Typ. Max. − − 1.2 Unit V Conditions IS= 100mA, VGS=0V ∗ Pulsed zElectrical characteristic curves 10 0.1 0.01 Ta=125°C 75°C 25°C −25°C 0.001 0.0001 0.00001 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical transfer characteristics 10 VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) DRAIN CURRENT : ID (A) 1 VDS=10V Pulsed Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 DRAIN CURRENT : ID (A) Fig.2 Static drain-source on-state resistance vs. drain current (Ι) 1 VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 1 DRAIN CURRENT : ID (A) Fig.3 Static drain-source on-state resistance vs. drain current (ΙΙ) 2/3 EM6K6 Transistor 1 0.1 0.01 0.1 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 0.5 1 1.5 Ta=25°C f=1MHZ VGS=0V Ciss 10 Crss 1 0.01 0.1 1 Coss 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Static drain-source on-state resistance vs. drain current (ΙΙΙ) 1000 100 VGS=0V Pulsed CAPACITANCE : C (pF) Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : ID (A) SWITHING TIME : t (ns) 1 VGS=1.8V Pulsed SOURCE CURRENT : IS (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) 10 Fig.6 Typical capacitance vs. drain-source voltage Fig.5 Source current vs. source-drain voltage Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed 100 td(off) tf td(on) 10 tr 1 0.01 1 0.1 DRAIN CURRENT : ID (A) Fig.7 Switching characteristics zSwitching characteristics measurement circuit Pulse width VGS RG ID VDS D.U.T. VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.8 Switching time measurement circuit tr td (off) tf toff Fig.9 Switching time waveforms 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0