1.5V Drive Pch+SBD MOSFET ES6U1 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. (6) (5) (4) (1) (2) (3) Abbreviated symbol : U01 zInner circuit zApplication Switching (6) (4) (5) zPackaging specifications Package Type ∗2 Taping Code T2R Basic ordering unit (pieces) 8000 ∗1 ES6U1 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (1) Gate (2) Source (3) Anode (4) Cathode (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Limits −12 ±10 ±1.3 ±2.6 −0.5 −2.6 Unit V V A A A A Channel temperature Tch Power dissipation PD 150 0.7 W / ELEMENT Limits 25 20 0.5 Unit V V A Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) ∗2 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Symbol VRM VR IF IFSM Forward current surge peak Junction temperature Power dissipation Tj PD ∗1 2.0 A ∗2 150 0.5 °C W / ELEMENT ∗1 60Hz 1cycle ∗2 Mounted on a ceramic board <MOSFET and Di> Parameter Symbol Power dissipation Range of storage temperature PD ∗ Tstg Limits Unit 0.8 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.10 - Rev.A ES6U1 Data Sheet zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.3 − ∗ − Static drain-source on-state RDS (on) resistance − − Forward transfer admittance Yfs ∗ 1.4 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time tr ∗ − Turn-off delay time td (off) ∗ − Fall time tf ∗ − Total gate charge Qg ∗ − Gate-source charge Qgs ∗ − Gate-drain charge Qgd ∗ − Typ. Max. Unit − − − − 190 280 400 530 − 290 28 21 8 10 30 9 2.4 0.6 0.4 ±10 − −1 −1.0 260 390 600 1060 − − − − − − − − − − − µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −1.3A, VGS= −4.5V ID= −0.6A, VGS= −2.5V ID= −0.6A, VGS= −1.8V ID= −0.2A, VGS= −1.5V VDS= −6V, ID= −1.3A VDS= −6V VGS= 0V f= 1MHz VDD −6V ID= −0.6A VGS= −4.5V RL 10Ω RG= 10Ω RL 4.6Ω VDD −6V RG= 10Ω ID= −1.3A VGS= −4.5V ∗Pulsed <MOSFET> Body diode (Source-drain) Parameter Symbol Min. Forward voltage VSD ∗ Typ. Max. − − −1.2 Unit V Conditions Min. Typ. Max. Unit − − 0.36 V − − 0.52 V IF= 0.5A − − 100 µA VR= 20V IS= −1.3A, VGS=0V ∗Pulsed <Di> Parameter Symbol Forward voltage VF Reverse current IR www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 0.1A 2/5 2009.10 - Rev.A ES6U1 Data Sheet zElectrical characteristics curves 2 VGS= -10V VGS= -4.5V VGS= -2.5V 1.5 VGS= -1.8V 1 VGS= -1.5V 0.5 1.5 10 Ta=25°C Pulsed VGS= -4.5V VGS= -2.5V VGS= -1.8V DRAIN CURRENT : -ID [A] Ta=25°C Pulsed DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 2 VGS= -1.5V 1 VGS= -1.2V 0.5 VGS= -1.2V VDS= -6V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 VGS= -1.0V 0.001 0 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 10000 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 1000 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 10 0.01 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 10 GATE-SOURCE VOLTAGE : -VGS[V] 10000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 VGS= -2.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 3/5 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 0.1 1 DRAIN-CURRENT : -ID [A] 10 100 2 1000 10 VGS= -1.5V Pulsed 10 0.01 1.5 Fig.3 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 1 DRAIN-SOURCE VOLTAGE : -VDS[V] 100 10000 0.1 0.5 DRAIN-CURRENT : -ID [A] VGS= -1.8V Pulsed 10 0.01 0 10 1000 DRAIN-CURRENT : -ID [A] 100 8 Fig.2 Typical Output Characteristics(Ⅱ) 10 0.01 10 6 VGS= -4.5V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10000 4 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0 VDS= -6V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.10 - Rev.A ES6U1 600 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=25°C Pulsed ID = -0.6A 400 ID = -1.3A 300 200 100 0 0.5 1 0 1.5 2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 4 6 8 10 Ta=25°C VDD = -6V VGS= -4.5V R G=10Ω Pulsed tf td (off) 100 10 td (on) tr 0 0.01 1 0.01 0.1 1 GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.12 Switching Characteristics 10 1000 5 GATE-SOURCE VOLTAGE : -VGS [V] 1000 500 SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 10 Data Sheet CAPACITANCE : C [pF] 4 3 2 Ta=25°C VDD = -6V ID = -1.3A R G=10Ω Pulsed 1 0 0 0.5 1 1.5 2 2.5 100 Ciss Coss 10 Crss Ta=25°C f=1MHz VGS=0V 1 0.01 3 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.13 Dynamic Input Characteristics <Di> 100000 1 pulsed pulsed FORWARD CURRENT : I F (A) REVERSE CURRENT : IR (A) 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.01 0.1 Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.01 0.001 0 5 10 15 20 25 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage 4/5 2009.10 - Rev.A ES6U1 Data Sheet zMeasurement circuits Pulse Width ID VDS VGS VGS 10% 50% RL D.U.T. 50% 10% 10% VDD RG 90% VDS td(on) 90% 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS Qg RL IG(Const.) VGS D.U.T. Qgs RG Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 5/5 2009.10 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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