SuperFET TM FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested D D G G S D-PAK FCD Series G D S I-PAK FCU Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR (Note 1) FCD5N60 / FCU5N60 Unit 600 V 4.6 2.9 A A 13.8 A ± 30 V Single Pulsed Avalanche Energy (Note 2) 2.9 mJ Avalanche Current (Note 1) 4.6 A EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns PD Power Dissipation 54 0.43 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCD5N60/FCU5N60 Unit RθJC Thermal Resistance, Junction-to-Case 2.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient 83 °C/W ©2006 Fairchild Semiconductor Corporation FCD5N60/FCU5N60 Rev. A0 1 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET July 2006 Device Marking Device Package Reel Size Tape Width Quantity FCD5N60 FCD5N60TM D-PAK 380mm 16mm 2500 FCD5N60 FCD5N60TF D-PAK 380mm 16mm 2000 FCU5N60 FCU5N60 I-PAK -- -- 70 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V ID = 250µA, Referenced to 25°C -- 0.6 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 4.6A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.81 0.95 Ω -- 3.8 -- S -- 470 600 pF -- 250 320 pF -- 22 -- pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 2.3A gFS Forward Transconductance VDS = 40V, ID = 2.3A (Note 4) Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 12 -- pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 32 -- pF VDD = 300V, ID = 4.6A RG = 25Ω -- 12 30 ns -- 40 90 ns -- 47 95 ns -- 22 55 ns -- 16 -- nC -- 2.8 -- nC -- 7 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 4.6A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 13.8 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.6A -- -- 1.4 V trr Reverse Recovery Time -- 295 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 4.6A dIF/dt =100A/µs -- 2.7 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.6A, di/dt ≤ 1200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCD5N60/FCU5N60 Rev. A0 2 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 ID , Drain Current [A] ID, Drain Current [A] 1 10 0 10 10 o 150 C o 25 C 0 10 o -55 C * Note 1. VDS = 40V * Notes : 1. 250µs Pulse Test o 2. TC = 25 C -1 10 2. 250µs Pulse Test -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.5 1 ID , Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 3.0 VGS = 10V 2.0 1.5 VGS = 20V 1.0 10 o 150 C o 25 C 0 10 o -55 C * Note 1. VDS = 40V o * Note : TJ = 25 C 0.5 0.0 2.5 5.0 7.5 10.0 12.5 2. 250µs Pulse Test -1 10 15.0 2 ID, Drain Current [A] 4 Figure 5. Capacitance Characteristics 8 10 Figure 6. Gate Charge Characteristics 12 1500 Ciss = Cgs + Cgd (Cds = shorted) VDS = 100V Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Crss = Cgd Capacitance [pF] 6 VGS , Gate-Source Voltage [V] *Notes : 1. VGS = 0 V 1000 2. f = 1 MHz Coss Ciss 500 Crss VDS = 400V 8 6 4 2 * Note : ID = 4.6A 0 0 0 10 1 10 0 5 10 15 o QG, Total Gate Charge [ C] VDS, Drain-Source Voltage [V] FCD5N60/FCU5N60 Rev. A0 VDS = 250V 10 3 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250µA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10V 0.5 2. ID = 2.3A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 2 4 10 µs 1 ID, Drain Current [A] ID, Drain Current [A] 200 5 10 100 µs 0 10 DC 1 ms 10 ms 100 ms * Notes : o 1. TC = 25 C -1 150 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 10 100 o Figure 9. Maximum Safe Operating Area 10 50 TJ, Junction Temperature [ C] 3 2 1 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] D = 0 .5 1 0 0 0 .2 * N o te s : 1 . Z θJC (t) = 0 .1 o C /W M a x . 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 2 -1 0 .0 1 PDM Z s in g le 1 0 2 .3 2 . D u ty F a c to r , D = t1/t2 0 .0 5 1 0 θJC (t), Thermal Response Figure 11. Transient Thermal Response Curve t1 p u ls e t2 -2 1 0 -5 1 0 -4 1 0 -3 t1, S q u a re FCD5N60/FCU5N60 Rev. A0 1 0 W a v e -2 P u ls e 4 1 0 -1 D u r a t io n 1 0 0 1 0 1 [s e c ] www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCD5N60/FCU5N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCD5N60/FCU5N60 Rev. A0 5 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCD5N60/FCU5N60 Rev. A0 6 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FCD5N60/FCU5N60 Rev. A0 7 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET Package Dimensions (Continued) I-PAK Dimensions in Millimeters FCD5N60/FCU5N60 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 FCD5N60/FCU5N60 Rev. A0 9 www.fairchildsemi.com FCD5N60/FCU5N60 600V N-Channel MOSFET TRADEMARKS