SupreMOSTM FCP16N60N / FCPF16N60NT N-Channel MOSFET 600V, 16A, 0.170Ω Features Description • RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • Ultra low gate charge ( Typ. Qg = 40.2nC) • Low effective output capacitance • 100% avalanche tested • RoHS compliant D G G D S TO-220 FCP Series TO-220F FCPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FCP16N60N FCPF16N60NT 600 Units V ±30 V -Continuous (TC = 25oC) 16.0 16.0* -Continuous (TC = 100oC) 10.1 10.1* IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 5.3 A EAR Repetitive Avalanche Energy 1.34 mJ dv/dt - Pulsed (Note 1) 48.0* (Note 2) 355 MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt (Note 3) A mJ 100 V/ns 20 V/ns (TC = 25oC) 134.4 35.7 W - Derate above 25oC 1.08 0.29 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 48.0 A oC -55 to +150 o 300 C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP16N60N FCPF16N60NT RθJC Thermal Resistance, Junction to Case 0.93 3.5 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. A1 1 Units oC/W www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET August 2009 Device Marking FCP16N60N Device FCP16N60N Package TO-220 Reel Size - Tape Width - Quantity 50 FCPF16N60NT FCPF16N60NT TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.73 - V/oC VDS = 480V, VGS = 0V - - 10 VDS = 480V, VGS = 0V, TC = 125oC - - 100 µA VGS = ±30V, VDS = 0V - - ±100 Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 8A - 0.170 0.199 Ω gFS Forward Transconductance VDS = 40V, ID = 8A - 13 - S VDS = 100V, VGS = 0V f = 1MHz - 1630 2170 pF - 70 95 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 5 10 pF Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 40 60 pF Cosseff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 176 - pF Qg(tot) Total Gate Charge at 10V - 40.2 52.3 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 380V, ID = 8A, VGS = 10V (Note 4) - 6.7 - nC - 12.9 - nC Drain Open Ω 2.9 Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 8A RG = 4.7Ω (Note 4) - 15.8 41.6 - 15.5 41.0 ns ns - 60.3 130.6 ns - 20.2 50.4 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 16 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 8A - - 1.2 V trr Reverse Recovery Time - 319 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 8A dIF/dt = 100A/µs - 4.4 - µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 5.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD = 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCP16N60N / FCPF16N60NT Rev. A1 2 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Package Marking and Ordering Information Figure 2. Transfer Characteristics 100 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V 10 ID, Drain Current[A] ID, Drain Current[A] Figure 1. On-Region Characteristics 1 10 o 150 C o 25 C o -55 C 1 *Notes: 1. 250µs Pulse Test *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 2 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 IS, Reverse Drain Current [A] 0.5 0.4 VGS = 10V 0.3 VGS = 20V 0.2 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Notes: TC = 25 C 0.1 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 7500 Coss *Notes: 1. VGS = 0V 2. f = 1MHz 5000 Ciss VDS = 120V VDS = 380V VDS = 480V 8 6 4 2 Crss 0 0.1 1.6 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 2. 250µs Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.6 RDS(ON) [Ω ], Drain-Source On-Resistance 4 6 VGS, Gate-Source Voltage[V] *Notes: ID = 8A 0 1 10 100 VDS, Drain-Source Voltage [V] FCP16N60N / FCPF16N60NT Rev. A1 0 600 3 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 8A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area _ FCP16N60N -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area _ FCPF16N60NT 100 100 20µs 10 1ms 10ms DC 1 20µs ID, Drain Current [A] 100µs ID, Drain Current [A] 200 Operation in This Area is Limited by R DS(on) *Notes: 0.1 100µs 10 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 2. TJ = 150 C 3. Single Pulse 0.01 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] 20 15 10 5 0 25 50 75 100 125 o TC, Case Temperature [ C] FCP16N60N / FCPF16N60NT Rev. A1 150 4 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) FCP16N60N / FCPF16N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve _ FCP16N60N 2 Thermal Response [Zθ JC] 1 0.5 0.2 PDM 0.1 0.1 t1 t2 0.05 *Notes: 0.02 o 0.01 1. ZθJC(t) = 0.93 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 0.005 -5 10 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] -1 10 1 Figure 13. Transient Thermal Response Curve _ FCPF16N60NT Thermal Response [Zθ JC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 t2 0.02 *Notes: 0.01 o 1. ZθJC(t) = 3.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FCP16N60N / FCPF16N60NT Rev. A1 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 2 10 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP16N60N / FCPF16N60NT Rev. A1 6 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V VGS ( D r iv e r ) GS G S am e T ype as D U T V DD • d v / d t c o n t r o lle d b y R G • IS D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v /d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FCP16N60N / FCPF16N60NT Rev. A1 7 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FCP16N60N / FCPF16N60NT Rev. A1 8 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 0.35 ±0.10 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 9.75 ±0.30 MAX1.47 Dimensions in Millimeters FCP16N60N / FCPF16N60NT Rev. A1 9 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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