FAIRCHILD FCPF16N60NT

SupreMOSTM
FCP16N60N / FCPF16N60NT
N-Channel MOSFET
600V, 16A, 0.170Ω
Features
Description
• RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
• Ultra low gate charge ( Typ. Qg = 40.2nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
D
G
G D S
TO-220
FCP Series
TO-220F
FCPF Series
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FCP16N60N FCPF16N60NT
600
Units
V
±30
V
-Continuous (TC = 25oC)
16.0
16.0*
-Continuous (TC = 100oC)
10.1
10.1*
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
5.3
A
EAR
Repetitive Avalanche Energy
1.34
mJ
dv/dt
- Pulsed
(Note 1)
48.0*
(Note 2)
355
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
(Note 3)
A
mJ
100
V/ns
20
V/ns
(TC = 25oC)
134.4
35.7
W
- Derate above 25oC
1.08
0.29
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
48.0
A
oC
-55 to +150
o
300
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCP16N60N FCPF16N60NT
RθJC
Thermal Resistance, Junction to Case
0.93
3.5
RθCS
Thermal Resistance, Case to Heat Sink (Typical)
0.5
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. A1
1
Units
oC/W
www.fairchildsemi.com
FCP16N60N / FCPF16N60NT N-Channel MOSFET
August 2009
Device Marking
FCP16N60N
Device
FCP16N60N
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FCPF16N60NT
FCPF16N60NT
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
-
0.73
-
V/oC
VDS = 480V, VGS = 0V
-
-
10
VDS = 480V, VGS = 0V, TC = 125oC
-
-
100
µA
VGS = ±30V, VDS = 0V
-
-
±100
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 1mA, VGS = 0V, TC = 25oC
ID = 1mA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 8A
-
0.170
0.199
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 8A
-
13
-
S
VDS = 100V, VGS = 0V
f = 1MHz
-
1630
2170
pF
-
70
95
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
5
10
pF
Coss
Output Capacitance
VDS = 380V, VGS = 0V, f = 1MHz
-
40
60
pF
Cosseff.
Effective Output Capacitance
VDS = 0V to 480V, VGS = 0V
-
176
-
pF
Qg(tot)
Total Gate Charge at 10V
-
40.2
52.3
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance (G-S)
VDS = 380V, ID = 8A,
VGS = 10V
(Note 4)
-
6.7
-
nC
-
12.9
-
nC
Drain Open
Ω
2.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380V, ID = 8A
RG = 4.7Ω
(Note 4)
-
15.8
41.6
-
15.5
41.0
ns
ns
-
60.3
130.6
ns
-
20.2
50.4
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
16
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
48
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 8A
-
-
1.2
V
trr
Reverse Recovery Time
-
319
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 8A
dIF/dt = 100A/µs
-
4.4
-
µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5.3A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD = 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP16N60N / FCPF16N60NT Rev. A1
2
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FCP16N60N / FCPF16N60NT N-Channel MOSFET
Package Marking and Ordering Information
Figure 2. Transfer Characteristics
100
100
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
10
ID, Drain Current[A]
ID, Drain Current[A]
Figure 1. On-Region Characteristics
1
10
o
150 C
o
25 C
o
-55 C
1
*Notes:
1. 250µs Pulse Test
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
o
2. TC = 25 C
0.1
0.1
0.1
1
VDS, Drain-Source Voltage[V]
10
2
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
100
IS, Reverse Drain Current [A]
0.5
0.4
VGS = 10V
0.3
VGS = 20V
0.2
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Notes: TC = 25 C
0.1
0
10
20
30
ID, Drain Current [A]
40
1
0.2
50
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
7500
Coss
*Notes:
1. VGS = 0V
2. f = 1MHz
5000
Ciss
VDS = 120V
VDS = 380V
VDS = 480V
8
6
4
2
Crss
0
0.1
1.6
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10000
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.6
RDS(ON) [Ω ],
Drain-Source On-Resistance
4
6
VGS, Gate-Source Voltage[V]
*Notes: ID = 8A
0
1
10
100
VDS, Drain-Source Voltage [V]
FCP16N60N / FCPF16N60NT Rev. A1
0
600
3
10
20
30
40
Qg, Total Gate Charge [nC]
50
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FCP16N60N / FCPF16N60NT N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 8A
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
_ FCP16N60N
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Safe Operating Area
_ FCPF16N60NT
100
100
20µs
10
1ms
10ms
DC
1
20µs
ID, Drain Current [A]
100µs
ID, Drain Current [A]
200
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
100µs
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
o
o
1. TC = 25 C
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
0.01
0.01
1
10
100
VDS, Drain-Source Voltage [V]
1000
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current
vs. Case Temperature
ID, Drain Current [A]
20
15
10
5
0
25
50
75
100
125
o
TC, Case Temperature [ C]
FCP16N60N / FCPF16N60NT Rev. A1
150
4
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FCP16N60N / FCPF16N60NT N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCP16N60N / FCPF16N60NT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve _ FCP16N60N
2
Thermal Response [Zθ JC]
1
0.5
0.2
PDM
0.1
0.1
t1
t2
0.05
*Notes:
0.02
o
0.01
1. ZθJC(t) = 0.93 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
0.005
-5
10
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
-1
10
1
Figure 13. Transient Thermal Response Curve _ FCPF16N60NT
Thermal Response [Zθ JC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
t2
0.02
*Notes:
0.01
o
1. ZθJC(t) = 3.5 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
FCP16N60N / FCPF16N60NT Rev. A1
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
5
10
2
10
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FCP16N60N / FCPF16N60NT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP16N60N / FCPF16N60NT Rev. A1
6
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FCP16N60N / FCPF16N60NT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
VGS
( D r iv e r )
GS
G
S am e T ype
as D U T
V
DD
• d v / d t c o n t r o lle d b y R G
• IS D c o n t r o lle d b y p u ls e p e r io d
G a te P u ls e W id t h
D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v /d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FCP16N60N / FCPF16N60NT Rev. A1
7
www.fairchildsemi.com
FCP16N60N / FCPF16N60NT N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FCP16N60N / FCPF16N60NT Rev. A1
8
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FCP16N60N / FCPF16N60NT N-Channel MOSFET
Mechanical Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
0.35 ±0.10
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
9.75 ±0.30
MAX1.47
Dimensions in Millimeters
FCP16N60N / FCPF16N60NT Rev. A1
9
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Preliminary
First Production
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Datasheet contains the design specifications for product development. Specifications may change in
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Rev. I41
© 2008 Fairchild Semiconductor Corporation
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