FAIRCHILD FDD6685

FDD6685
30V P-Channel PowerTrench MOSFET
Features
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
Semiconductor’s
advanced
PowerTrench
• –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V
RDS(ON) = 30 mΩ @ VGS = –4.5 V
process. It has been optimized for power management
• Fast switching speed
applications requiring a wide range of gave drive
• High performance trench technology for extremely
low RDS(ON)
voltage ratings (4.5V – 25V).
• High power and current handling capability
• Qualified to AEC Q101
S
D
G
G
S
TO-252
D
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Drain-Source Voltage
Ratings
–30
Units
VDSS
VGSS
Gate-Source Voltage
±25
V
–40
–11
–100
A
(Note 1)
52
W
(Note 1a)
3.8
ID
PD
Parameter
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed, PW ≤ 100µs (Note 1b)
Power Dissipation for Single Operation
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
V
1.6
–55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.9
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2004 Fairchild Semiconductor Corporation
FDD6685 Rev D (W)
FDD6685
February 2004
FDD6685
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDD6685
FDD6685
13”
12mm
2500 units
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ Max
Units
42
mJ
–11
A
Drain-Source Avalanche Ratings (Note 4)
EAS
IAS
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
ID = –11 A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –24 V,
VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±25V,
VDS = 0 V
±100
nA
On Characteristics
–30
V
–24
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
5
RDS(on)
Static Drain–Source
On–Resistance
14
21
20
ID(on)
On–State Drain Current
VGS = –10 V,
ID = –11 A
VGS = –4.5 V,
ID = –9 A
VGS = –10 V,ID = –11 A,TJ=125°C
VGS = –10 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –11 A
26
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
1715
pF
440
pF
225
pF
VGS = 15 mV,
f = 1.0 MHz
3.6
Ω
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
17
31
ns
11
21
ns
ns
–1
–1.8
–3
V
mV/°C
mΩ
20
30
–20
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
43
68
tf
Turn–Off Fall Time
21
34
ns
Qg
Total Gate Charge
17
24
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –15V,
VGS = –5 V
ID = –11 A,
9
nC
4
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = –3.2 A
IF = –11 A,
diF/dt = 100 A/µs
(Note 2)
–0.8
–1.2
V
26
ns
13
nC
FDD6685 Rev D (W)
FDD6685
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V.
4. Starting TJ = 25°C, L = 0.69mH, IAS = –11A
FDD6685 Rev D (W)
FDD6685
Typical Characteristics
40
2.4
VGS = -10V
-4.5V
-ID, DRAIN CURRENT (A)
-6.0V
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.0V
-5.0V
30
-3.5V
20
10
-3.0V
0
1
2
-VDS, DRAIN-SOURCE VOLTAGE (V)
1.8
-4.0V
1.6
-4.5V
-5.0V
1.4
-6.0V
1.2
-8.0V
-10V
1
0
3
Figure 1. On-Region Characteristics.
2
4
6
-ID, DRAIN CURRENT (A)
8
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.08
ID = -11.0A
VGS = -10V
ID = -5.5A
RDS(ON), ON-RESISTANCE (OHM)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
0.8
0
1.4
1.2
1
0.8
0.6
0.06
0.04
o
TA = 125 C
0.02
o
TA = 25 C
0
-50
-25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (oC)
150
175
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
40
100
VGS = 0V
TA = -55oC
o
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
-ID, DRAIN CURRENT (A)
VGS = -3.5V
2.2
125 C
30
o
25 C
20
10
0
10
o
TA = 125 C
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6685 Rev D (W)
FDD6685
Typical Characteristics
2400
ID = -11.0 A
f = 1MHz
VGS = 0 V
VDS = 10V
8
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
30V
6
20V
4
1800
Ciss
1200
Coss
600
2
Crss
0
0
0
5
10
15
20
Qg, GATE CHARGE (nC)
25
30
0
Figure 7. Gate Charge Characteristics.
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
1000
100
1ms
10ms
100ms
RDS(ON) LIMIT
10
100µs
1
10s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
0.1
TA = 25oC
0.01
0.01
0.10
1.00
10.00
VDS, DRAIN-SOURCE VOLTAGE (V)
60
40
20
0
0.01
100.00
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
80
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
5
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6685 Rev D (W)
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I8