FDS6993 Dual P-Channel PowerTrench MOSFET General Description Features These P-Channel MOSFETs are made using FSC’s PowerTrench technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. • Q1: • Q2: RDS(on) = 85mΩ @ VGS = –4.5V P-Channel –6.8A, –12V RDS(on) = 17mΩ @ VGS = –4.5V RDS(on) = 24mΩ @ VGS = –2.5V • RDS(on) = 30mΩ @ VGS = –1.8V High power and handling capability in a widely used surface mount package DD2 DD2 D1 D P-Channel –4.3A, –30V RDS(on) = 55mΩ @ VGS = –10V 5 DD1 6 4 3 Q2 7 G2 S2 G SO-8 Pin 1 SO-8 G1 S1 S TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation PD (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG 1 S Absolute Maximum Ratings Symbol 8 S 2 Q1 Operating and Storage Junction Temperature Range Q1 Q2 Units –30 –12 ±25 –4.3 –20 ±8 –6.8 –20 V V 2 1.6 1 0.9 –55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 78 °C/W (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6993 FDS6993 13” 12mm 2500 units 2003 Fairchild Semiconductor Corporation FDS6993 Rev C (W) FDS6993 June 2003 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics VGS = 0 V, ID = –250 µA VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 0 V VDS = –10 V, VGS = 0 V VGS = ±25 V, VDS = 0 V VGS = ±8 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 –30 –12 VDS = VGS, ID = –250 µA VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –4.3 A VGS = –10 V, ID = –4.3 A, TJ = 125°C VGS = –4.5 V, ID = –3.4 A Q1 Q2 Q1 Q2 Q1 –1 –0.4 VGS = –4.5 V, ID = –6.8 A VGS = –4.5 V, ID = –6.8 A, TJ = 125°C VGS = –2.5 V, ID = –5.9 A VGS = –1.8 V, ID = –5.0 VGS = –10 V, VDS = –5 V VGS = –4.5 V, VDS = –5 V VDS = –10 V, ID = –7 A VDS = –5 V, ID = –5 A Q2 V –21 –0.9 mV/°C –1 –1 ±100 ±100 µA nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance Q1 Q2 Q1 Q2 –1.8 –0.5 4 3 48 64 74 –3 –1.5 11 14 14 19 17 24 24 30 –20 –20 V mV/°C 55 80 85 mΩ A 9 34 S 530 2980 140 1230 70 790 pF Dynamic Characteristics Ciss Input Capacitance Q1 VDS = –15 V, VGS = 0 V, f = 1.0 MHz Coss Output Capacitance Crss Q2 Reverse Transfer Capacitance VDS = –6 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 Q2 pF pF FDS6993 Rev C (W) FDS6993 Electrical Characteristics Symbol (continued) Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Q1 VDD = –15 V, ID = –1 A, VGS = –10V, RGEN = 6 Ω Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q2 VDD = –6 V, ID = –1 A, VGS = –4.5V, RGEN = 6 Ω Q1 VDS = –15 V, ID = –4.3 A, VGS = –5 V Q2 VDS = –6 V, ID = –6.8 A, VGS = –5 V 10 19 14 20 14 134 9 121 5.5 32 1.8 4.0 2.2 8.0 19 34 26 35 24 215 18 193 7.7 45 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward VGS = 0 V, IS = –1.3 A Voltage VGS = 0 V, IS = –1.3 A (Note 2) (Note 2) Q1 Q2 Q1 Q2 –0.8 –0.6 –1.3 –1.3 –1.2 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°/W when mounted on a .02 in2 pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6993 Rev C (W) FDS6993 Electrical Characteristics FDS6993 Typical Characteristics: Q1 2 VGS = -10V -5.0V V -ID, DRAIN CURRENT (A) 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 -4.5V V -6.0V V 12 -4.0V 8 -3.5V 4 -3.0V 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) -4.5V -5.0V 1.4 -6.0V 1.2 -7.0V -8.0V -10V 1 0 5 Figure 1. On-Region Characteristics. 4 8 12 -ID, DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.2 ID = -4.3A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.8 0 1.3 1.2 1.1 1 0.9 ID = -2.15A 0.15 TA = 125oC 0.1 TA = 25oC 0.05 0 0.8 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 2.5 150 Figure 3. On-Resistance Variation with Temperature. 5 7.5 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 15 TA = -55oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) VGS=-4.0V 1.8 o 125 C 12 o 25 C 9 6 3 VGS =0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6993 Rev C (W) FDS6993 Typical Characteristics: Q1 700 ID = -4.3A -20V 6 -15V 4 500 Ciss 400 300 Coss 200 2 100 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 Figure 7. Gate Charge Characteristics. 5 10 15 20 25 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 100 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs -ID, DRAIN CURRENT (A) Crss 0 0 10 1ms 10ms 100ms 1s 1 10s DC VGS = -10V SINGLE PULSE RθJA = 135oC/W 0.1 TA = 25oC 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE f = 1 MHz VGS = 0 V 600 VDS = -10V 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 135 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6993 Rev C (W) FDS6993 Typical Characteristics: Q2 2.2 20 -2.0V 16 -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V -1.5V -2.5V 12 8 4 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.5V -6.0V 1 2 -10.0V 0 Figure 12. On-Region Characteristics. 4 8 12 -ID, DRAIN CURRENT (A) 16 20 Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.045 1.4 ID = -3.4A ID = -6.8A VGS = - 4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = - 2.0V 0.8 0 1.2 1.1 1 0.9 0.8 0.035 0.025 TA = 125oC 0.015 TA = 25oC 0.005 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 1 Figure 14. On-Resistance Variation with Temperature. 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 20 10 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 2 16 12 TA = 125oC o 8 -55 C 4 o 25 C VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0 0.4 0.8 1.2 1.6 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Transfer Characteristics. 2 0 0.2 0.4 0.6 0.8 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6993 Rev C (W) FDS6993 Typical Characteristics: Q2 10 4200 f = 1 MHz VGS = 0 V 3500 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) ID = -6.8A VDS = -4V 6 -8V 4 -6V 2 2800 2100 Coss 1400 Crss 700 0 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60 70 0 Figure 18. Gate Charge Characteristics. 3 6 9 -VDS, DRAIN TO SOURCE VOLTAGE (V) 12 Figure 19. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs -ID, DRAIN CURRENT (A) Ciss 1ms 10ms 10 100ms 1s 10s 1 DC VGS = -4.5V SINGLE PULSE RθJA = 135oC/W 0.1 TA = 25oC 30 20 10 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 100 0 0.001 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 20. Maximum Safe Operating Area. 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 21. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA o 0.2 0.1 RθJA = 135 C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.001 0.0001 SINGLE PULSE 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6993 Rev C (W) FDS6993 Rev C (W)