FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature. • High input impedance • CO-PAK, IGBT with FRD : trr = 50 ns (typ.) Applications Lamp applications (Hallogen Dimmer) C G TO-220F 1.Gate 2.Collector E 3.Emitter Absolute Maximum Ratings Symbol Description VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC Collector Current @ TC = 25°C Collector Current @ TC = 100°C FGPF7N60LSD Units 600 V ± 20 V 14 A 7 A 21 A 12 A ICM (1) Pulsed Collector Current IF Diode Continous Forward Current I FM Diode Maximum Forward Current 60 A PD Maximum Power Dissipation @ TC = 25°C 45 W Maximum Power Dissipation @ TC = 100°C 18 W @ TC = 100°C TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC (IGBT) Thermal Resistance, Junction-to-Case -- 2.8 °C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 4.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) -- 62.5 °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2006 Fairchild Semiconductor Corporation FGPF7N60LSD Rev. A 1 www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK January 2006 Device Marking Device Package Packaging Type Qty per Tube FGPF7N60LSD FGPF7N60LSDTU TO-220F Rail /Tube 50ea Electrical Characteristics of the IGBT Symbol Max Qty per Box 1,000ea TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 600 -- -- V -- V/°C Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown] Voltage VGE = 0V, IC = 1mA -- 0.6 ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA 5.0 6.5 8.0 V VGE = 15V -- 1.4 2.0 V IC = 7A, VGE = 15V, TC = 125°C -- 1.47 -- V IC = 14 A, -- 1.85 -- V -- 510 -- pF -- 55 -- pF -- 15 -- pF On Characteristics VGE(th) G-E Threshold Voltage IC = 7mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 7A, VGE = 15V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time -- 120 -- ns tr Rise Time -- 44 -- ns td(off) Turn-Off Delay Time -- 410 535 ns tf Fall Time -- 2320 3480 ns Eon Turn-On Switching Loss -- 0.27 -- uJ Eoff Turn-Off Switching Loss -- 3.8 -- mJ Ets Total Switching Loss -- 4.07 6.1 mJ td(on) Turn-On Delay Time -- 105 -- ns tr Rise Time -- 50 -- ns td(off) Turn-Off Delay Time -- 420 -- ns tf Fall Time -- 3745 -- ns Eon Turn-On Switching Loss -- 0.22 -- uJ Eoff Turn-Off Switching Loss -- 5.94 -- mJ Ets Total Switching Loss -- 6.16 -- mJ Qg Total Gate Charge -- 24 36 nC Qge Gate-Emitter Charge Qgc Gate-Collector Charge Le Internal Emitter Inductance FGPF7N60LSD Rev. A VCC = 300 V, IC = 7A, RG = 470Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 7 A, RG =470Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 7A, VGE = 15V -- 4 6 nC -- 10 15 nC Measured 5mm from PKG -- 7.5 -- nH 2 www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Package Marking and Ordering Information C Symbol VFM trr Irr Qrr = 25°C unless otherwise noted Parameter Test Conditions Diode Forward Voltage IF = 7A Diode Reverse Recovery Time Diode Peak Reverse Recovery Current IF = 7A dI/dt = 200 A/µs Diode Reverse Recovery Charge FGPF7N60LSD Rev. A 3 Min. Typ. Max. Units TC = 25°C -- 1.65 2.1 V TC = 100°C -- 1.58 -- TC = 25°C -- 50 65 TC = 100°C -- 58 -- TC = 25°C -- 2.5 3.75 TC = 100°C -- 3.3 -- TC = 25°C -- 62.5 122 TC = 100°C -- 95.7 -- ns A nC www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Electrical Characteristics of DIODE T Figure 1. Typical Output Characteristics 40 Figure 2. Typical Saturation Voltage Characteristics 40 o TC = 25 C 20V Com m on Em itter V Ge = 15V o 15V 30 20 10V 10 T c = 25 C o T c = 125 C 30 Collector Current, IC [A] Collector Current, IC [A] 12V 20 10 V G E= 8 V 0 0 2 4 6 C o lle c to r-E m itte r V o lta ge , V C E [V ] 0 8 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 Collector-Emitter Voltage, V CE [V] 6 Figure 4. Load Current vs Frequency 2 .2 Vcc = 300V load Current : peak of square wave Duty cycle : 50% o Tc = 100 C Power Dissipation = 9W 1 .8 10 Load Current [A] Collector-Emitter Voltage, VCE [V] 15 14A 2 .0 1 .6 7A 1 .4 5 I c = 3 .5 A 1 .2 1 .0 0 25 50 75 100 125 0 150 0.1 o C a se Te m pe ra ture , T C ( C ) [V] CE Collector - Emitter Voltage, V Collector - Emitter Voltage, V CE [V] 10 8 6 4 2 10 15 20 1000 Com m on Em itter o T C = 125 C 8 6 4 2 5 Gate - Emitter Voltage, V G E [V] FGPF7N60LSD Rev. A 100 Figure 6. Saturation Voltage vs. Vge Com m on Em itter o T C = 25 C 5 10 Frequency [kHz] Figure 5. Saturation Voltage vs. Vge 10 1 4 10 15 Gate - Em itter Voltage, V G E [V] 20 www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics 1000 Figure 8. Turn-On Characteristics vs. Gate Resistance Com m on Em itter V GE = 0V, f = 1MHz o T C = 25 C 800 td(on) 600 Switching Time [ns] Capacitance [pF] Ciss Coss 400 Crss 200 tr 100 Com mon Em itter V CC = 300V, V GE = +/-15V IC = 7A o T C = 25 C o T C = 125 C 0 1 10 10 Collector-Emitter Voltage, V CE [V] 100 1000 Gate Resistance, R G [Ω ] Figure 9. Turn-Off Characteristics vs. Gate Resistance tf 1000 1000 Switching Loss [uJ] Switching Time [ns] Figure 10. Switching Loss vs. Gate Resistance td(off) Common Emitter V CC = 300V, V GE = +/-15V 100 IC = 7A Eoff Common Emitter V CC=300V,V GE=+/-15V Eon IC=7A 100 o T C = 25 C o T C=25 C o o T C=125 C T C = 125 C 100 100 1000 1000 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] Figure 11. Turn-On Characteristics vs. Collector Current Figure 12. Turn-Off Characteristics vs. Collector Current td(on) Switching Time [ns] Switching Time [ns] 1000 tr 100 Common Emitter VGE = +/-15V, RG = 470Ω tf td(off) Common Emitter VGE = +/-15V, RG = 470Ω 100 o o TC = 25 C T C = 25 C o o TC = 125 C T C = 125 C 4 6 8 10 12 14 16 4 Collector Current, IC [A] FGPF7N60LSD Rev. A 6 8 10 12 14 16 Collector Current, IC [A] 5 www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics Gate-Emitter Voltage, VGE [V] 15 Switching Loss [uJ] Eoff 1000 Eon Common Emitter V GE = +/-15V, RG = 470Ω Common Emitter R L = 43 ohm o T C = 25 C 200V 300V Vcc = 100V 10 5 o T C = 25 C o T C = 125 C 100 4 8 12 0 16 0 4 Collector Current, IC [A] 8 12 16 Gate Charge, Q g [nC] 20 24 Figure 15. SOA Characteristics 100 Collector Current, Ic [A] Ic MAX (Pulsed) 10 50 µ s Ic MAX (Continuous) 100 µ s 1ms 1 DC Operation Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 1 10 100 1000 Collector - Emitter Voltage, V CE [V] Figure 16. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 0 .1 Pdm 0 .0 5 t1 0 .0 2 t2 0 .0 1 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC s in g le p u ls e 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e cta ngula r P ulse D ura tio n [se c] FGPF7N60LSD Rev. A 6 www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 17. Forward Voltage Characteristics Figure 18. Reverse Recovery Current Reverse Recovery Current , Irr [A] 3.0 Forward Current , IF [A] 10 o 1 T C = 100 C o T C = 25 C 0.1 0.5 1.0 1.5 2.0 2.5 di/dt=200A /us 2.5 2.0 di/dt=100A /us 1.5 1.0 3.0 2 4 Forward Voltage , VF [V] Figure 19. Stored Charge 8 10 12 14 12 14 Figure 20. Reverse Recovery Time 80 60 70 60 Reverse Recovery Time , trr [ns] Reverse Recovery Charge , Qrr [nC] 6 Forward C urrent , IF [A ] di/dt=200A/us 50 di/dt=100A/us 40 30 2 4 6 8 10 12 40 di/dt=200A/us 30 14 2 Forward Current , IF [A] FGPF7N60LSD Rev. A di/dt=100A/us 50 4 6 8 10 Forward Current , IF [A] 7 www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Typical Performance Characteristics TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FGPF7N60LSD Rev. A 8 www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 9 FGPF7N60LSD Rev. A www.fairchildsemi.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK TRADEMARKS