FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value -30 Units V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -5 A PC Power Dissipation(TC=25°C) 0.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=-50µA, IE=0 Min. -30 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 -20 BVEBO Emitter-Base Breakdown Voltage IE=-50µA, IC=0 -6 V ICBO Collector Cut-off Current VCB=-20V, VB=0 IEBO Emitter Cut-off Current VEB=-5V, IC=0 hFE DC Current Gain VCE=-2V, IC=-0.5A VCE(sat) Collector-Emitter Saturation Voltage IC=-4, IB=-0.1A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC=-4, IB=-0.1A -1.5 V V 80 -0.5 µA -0.5 µA 390 Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjA Parameter Thermal Resistance, Junction to Ambient Max 250 Units °C/W hFE Classification Classification P Q R hFE 80 ~ 180 120 ~ 270 180 ~ 390 Marking FAP hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 FJC1386 Typical Characteristics -1400 1000 VCE = - 2V -1200 o Ta = 125 C IB = -6mA hFE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT IB = -7mA -1000 IB = -5mA -800 IB = -4mA -600 IB = -3mA -400 IB = -2mA -200 o Ta = 25 C o Ta = - 40 C 100 IB = -1mA 10 -10m 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -100m Figure 1. Static Characteristic Figure 2. DC current Gain -10 IC = 10 IB -1 o Ta = 125 C -100m o Ta = 25 C o Ta = - 40 C -10m -1m -1m -10m -100m -1 IC = 10 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE -10 -1 o Ta = - 40 C -0.1 -1m -10 o o Ta = 125 C Ta = 25 C -10m IC [A], COLLECTOR CURRENT -100m -1 -10 IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 0.7 VCE = - 2V -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 o 125 C o o 25 C - 40 C -0.2 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 PC [W], COLLECTOR POWER DISSIPATION -1.8 IC [A], COLLECTOR CURRENT -10 IC [A], COLLECTOR CURRENT V CE[V], COLLECTOR-EMITTER VOLTAGE -0.0 -0.0 -1 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 VBE [V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 25 50 75 100 125 150 175 o Ta [ C], AMIBIENT TEMPERATURE Figure 6. Power Derating Rev. A1, August 2002 FJC1386 Package Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1