FJPF3835 FJPF3835 Power Amplifier • High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value 200 Units V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C 120 V 8 V Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage BVCEO BVEBO ICBO IEBO hFE Test Condition IC=5mA, IE=0 Min. 200 Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 120 Emitter-Base Breakdown Voltage IE=5mA, IC=0 Collector Cut-off Current VCB=80V, IE=0 Emitter Cut-off Current VEB=4V, IC=0 * DC Current Gain VCE=4V, IC=3A Typ. Max. Units V V 8 V 120 0.1 mA 0.1 mA 250 VCE(sat) Collector-Emitter Saturation Voltage IC=3A, IB=0.3A 0.5 VBE(sat) Base-Emitter On Voltage IC=3A, IB=0.3A 1.2 fT Current Gain Bandwidth Product VCE=5V, IC=1A Cob Output Capacitance tON Turn On Time tF Fall Time tSTG Storage Time V V 30 MHz VCB=10V, f=1MHz 210 pF VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω 0.26 µs 0.68 µs 6.68 µs * Pulse Test : PW=20µs ©2004 Fairchild Semiconductor Corporation Rev. A, May 2004 FJPF3835 Typical Characteristics 7 1000 IB = 35mA VCE = 4V o hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 6 5 4 3 IB = 10mA 2 IB = 5mA o TC = 125 C o 100 0 2 4 6 10 0.01 8 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE 10 Figure 2. DC current Gain 1 10 IC = 10 IB VBE(sat), SATURATION VOLTAGE IC = 10 IB 0.1 o TC = - 25 C o TC = 25 C o TC = 75 C 0.01 o TC = 125 C 1E-3 0.01 0.1 1 o 1 TC = 25 C o TC = - 25 C o TC = 75 C o TC = 125 C 0.1 0.01 10 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 60 100 50 100ms IC MAX. (DC) 10ms 1 0.1 Single Pulse o TC=25[ C] PC[W], POWER DISSIPATION IC MAX. (Pulse) 10 0.01 0.1 1 IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic VCE(sat) [V], SATURATION VOLTAGE TC = 25 C o TC = - 25 C 1 0 IC[A], COLLECTOR CURRENT TC = 75 C 40 30 20 10 0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2004 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, May 2004 FJPF3835 Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I10