FAIRCHILD FMBM5401

FMBM5401 PNP General Purpose Amplifier
FMBM5401
PNP General Purpose Amplifier
• This device has matched dies in SuperSOT-6.
C2
E1
C1
B2
E2
pin #1 B1
SuperSOTTM-6
Mark: .4S2
Absolute Maximum Ratings*
Value
Units
VCEO
Symbol
Collector-Emitter Voltage
Parameter
-150
V
VCBO
Collector-Base Voltage
-160
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-600
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max
Units
Off Characteristics
BVCEO
Collector-Emitter Breakdown Voltage *
IC = -1.0mA, IB = 0
-150
V
BVCBO
Collector-Base Breakdown Voltage
IC = -100µA, IE = 0
-160
V
BVEBO
Emitter-Base Breakdown Voltage
IC = -10µA, IC = 0
-5.0
V
ICBO
Collector Cut-off Current
VCB = -120V, IE = 0
VCB = -120V, IE = 0, Ta = 100°C
-50
-50
nA
µA
IEBO
Emitter Cut-off Current
VEB = -3.0V, IC = 0
-50
nA
On Characteristics*
hFE1
DC Current Gain
VCE = -5V, IC = -1mA
50
DIVID1
Variation Ratio of hFE1 Between Die 1 and Die 2
hFE1(Die1)/hFE1(Die2)
0.9
1.1
hFE2
DC Current Gain
VCE = -5V, IC = -10mA
60
240
DIVID2
Variation Ratio of hFE2 Between Die 1 and Die 2
hFE2(Die1)/hFE2(Die2)
0.95
1.05
hFE3
DC Current Gain
VCE = -5V, IC = -50mA
50
DIVID3
Variation Ratio of hFE3 Between Die 1 and Die 2
hFE3(Die1)/hFE3(Die2)
0.9
©2005 Fairchild Semiconductor Corporation
FMBM5401 Rev. A
1
1.1
www.fairchildsemi.com
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
VBE(on)
Base-Emitter On Voltage
VCE = -5V, IC = -10mA
DEL
Difference of VBE(on) Between Die1 and Die 2
VBE(on)(Die1)-VBE(on)(Die2)
Min.
Max
-0.2
-0.5
V
V
Units
-1
-1
V
V
-1
V
-8
8
mV
100
300
MHz
Small Signal Characteristics
fT
Current Gain Bandwidth Product
VCE = -10V, IC = -10mA
f = 100MHz
Cob
Output Capacitance
VCB = -10V, IE = 0, f = 1MHz
6.0
pF
NF
Noise Figure
VCE = -5.0V, IC = -250µA,
RS = 1.0KΩ, f = 10Hz to 15.7KHz
8.0
dB
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
Thermal Characteristics T
Symbol
C
= 25°C unless otherwise noted
Value
Units
PD
Total Device Dissipation
Parameter
700
mW
RθJA
Thermal Resistance, Junction to Ambient, Total
180
°C/W
* Device mounted on a 1 in 2 pad of 2 oz coppe
2
FMBM5401 Rev. A
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FMBM5401 PNP General Purpose Amplifier
Electrical Characteristics (Continued)
β
Figure
2. Collector-Emitter Saturation
Voltage vs Collector Current
Figure 1. Typical Pulsed Current Gain
vs Collector Current
0.4
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
hFE - TYPICAL PULSED CURRENT GAIN
200
VCE = 5V
0.3β
150
o
125 C
o
25 C
o
125 C
0.1
o
- 40 C
0
1E-4
1E-3
0.01
0.1
o
- 40 C
0.0
0.1
1
IC - COLLECTOR CURRENT (A)
VBC(ON) - BASE-EMITTER ON VOLTAGE (V)
VBESAT - BASE-EMITTER VOLTAGE (V)
- 40 C
0.8
o
25 C
0.6
o
- 40 C
o
25 C
0.6
o
125 C
β
0.4
o
125 C
0.4
β
0.2
0.1
1
β = 10
10
1
10
100
IC - COLLECTOR CURRENT (mA)
Figure 6. Collector-Emitter Breakdown
Voltage with Resistance Between
Emitter-Base
BV CER - BREAKDOWN VOLTAGE (V)
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
100
V CB = 10 0V
10
1
0.1
50
75
100
125
T A - AM BIENT TE MPE RATURE (°C)
VCE = 5V
0.2
0.1
100
IC - COLLECTOR CURRENT (mA)
I CBO - COLLECTOR CURRENT (nA)
100
1.0
o
150
3
FMBM5401 Rev. A
10
Figure 4. Base-Emitter On Voltage
vs Collector Current
1.0
25
1
IC - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
0.8
o
25 C
0.2
100
50
β = 10
Between Emitter-Base
220
210
200
190
180
170
0.1
1
10
Ω (kΩ )
RESISTANCE
100
1000
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FMBM5401 PNP General Purpose Amplifier
Typical Performance Characteristics
FMBM5401 PNP General Purpose Amplifier
Typical Performance Characteristics
(Continued)
Figure 7.Input and Output Capacitance
vs Reverse Voltage
hFE - TYPICAL PULSED CURRENT GAIN
200
VCE = 5V
150
o
125 C
100
o
25 C
50
0
1E-4
o
- 40 C
1E-3
0.01
0.1
1
IC - COLLECTOR CURRENT (A)
4
FMBM5401 Rev. A
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FMBM5401 PNP General Purpose Amplifier
Mechanical Dimensions
SuperSOTTM-6
Dimensions in Millimeters
5
FMBM5401 Rev. A
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
6
FMBM5401 Rev. A
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FMBM5401 PNP General Purpose Amplifier
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