FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Value Units VCEO Symbol Collector-Emitter Voltage Parameter -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may e impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -150 V BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -160 V BVEBO Emitter-Base Breakdown Voltage IC = -10µA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C -50 -50 nA µA IEBO Emitter Cut-off Current VEB = -3.0V, IC = 0 -50 nA On Characteristics* hFE1 DC Current Gain VCE = -5V, IC = -1mA 50 DIVID1 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1)/hFE1(Die2) 0.9 1.1 hFE2 DC Current Gain VCE = -5V, IC = -10mA 60 240 DIVID2 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1)/hFE2(Die2) 0.95 1.05 hFE3 DC Current Gain VCE = -5V, IC = -50mA 50 DIVID3 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1)/hFE3(Die2) 0.9 ©2005 Fairchild Semiconductor Corporation FMBM5401 Rev. A 1 1.1 www.fairchildsemi.com Symbol TC = 25°C unless otherwise noted Parameter Conditions VCE(sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VBE(sat) Base-Emitter Saturation Voltage IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA VBE(on) Base-Emitter On Voltage VCE = -5V, IC = -10mA DEL Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1)-VBE(on)(Die2) Min. Max -0.2 -0.5 V V Units -1 -1 V V -1 V -8 8 mV 100 300 MHz Small Signal Characteristics fT Current Gain Bandwidth Product VCE = -10V, IC = -10mA f = 100MHz Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz 6.0 pF NF Noise Figure VCE = -5.0V, IC = -250µA, RS = 1.0KΩ, f = 10Hz to 15.7KHz 8.0 dB * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% Thermal Characteristics T Symbol C = 25°C unless otherwise noted Value Units PD Total Device Dissipation Parameter 700 mW RθJA Thermal Resistance, Junction to Ambient, Total 180 °C/W * Device mounted on a 1 in 2 pad of 2 oz coppe 2 FMBM5401 Rev. A www.fairchildsemi.com FMBM5401 PNP General Purpose Amplifier Electrical Characteristics (Continued) β Figure 2. Collector-Emitter Saturation Voltage vs Collector Current Figure 1. Typical Pulsed Current Gain vs Collector Current 0.4 VCESAT - COLLECTOR-EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN 200 VCE = 5V 0.3β 150 o 125 C o 25 C o 125 C 0.1 o - 40 C 0 1E-4 1E-3 0.01 0.1 o - 40 C 0.0 0.1 1 IC - COLLECTOR CURRENT (A) VBC(ON) - BASE-EMITTER ON VOLTAGE (V) VBESAT - BASE-EMITTER VOLTAGE (V) - 40 C 0.8 o 25 C 0.6 o - 40 C o 25 C 0.6 o 125 C β 0.4 o 125 C 0.4 β 0.2 0.1 1 β = 10 10 1 10 100 IC - COLLECTOR CURRENT (mA) Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base BV CER - BREAKDOWN VOLTAGE (V) Figure 5. Collector-Cutoff Current vs Ambient Temperature 100 V CB = 10 0V 10 1 0.1 50 75 100 125 T A - AM BIENT TE MPE RATURE (°C) VCE = 5V 0.2 0.1 100 IC - COLLECTOR CURRENT (mA) I CBO - COLLECTOR CURRENT (nA) 100 1.0 o 150 3 FMBM5401 Rev. A 10 Figure 4. Base-Emitter On Voltage vs Collector Current 1.0 25 1 IC - COLLECTOR CURRENT (mA) Figure 3. Base-Emitter Saturation Voltage vs Collector Current 0.8 o 25 C 0.2 100 50 β = 10 Between Emitter-Base 220 210 200 190 180 170 0.1 1 10 Ω (kΩ ) RESISTANCE 100 1000 www.fairchildsemi.com FMBM5401 PNP General Purpose Amplifier Typical Performance Characteristics FMBM5401 PNP General Purpose Amplifier Typical Performance Characteristics (Continued) Figure 7.Input and Output Capacitance vs Reverse Voltage hFE - TYPICAL PULSED CURRENT GAIN 200 VCE = 5V 150 o 125 C 100 o 25 C 50 0 1E-4 o - 40 C 1E-3 0.01 0.1 1 IC - COLLECTOR CURRENT (A) 4 FMBM5401 Rev. A www.fairchildsemi.com FMBM5401 PNP General Purpose Amplifier Mechanical Dimensions SuperSOTTM-6 Dimensions in Millimeters 5 FMBM5401 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 6 FMBM5401 Rev. A www.fairchildsemi.com FMBM5401 PNP General Purpose Amplifier TRADEMARKS