FAIRCHILD FMBS2383

FMBS2383
NPN Epitaxial Silicon Transistor
Features
• Power Amplifier
• Collector-Emitter Voltage : VCEO=160V
• Current Gain Bandwidth Product : fT=120MHz
E
C
1
6
2
5
3
4
C
B
C
C
SuperSOTTM-6
Marking : 2383
Absolute Maximum Ratings
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
160
160
V
V
VEBO
IC
Emitter-Base Voltage
Collector Current
5
800
V
mA
Base Current
Power Dissipation
160
630
mA
mW
RθJA*
TJ
Thermal Resistance, Junction to Ambient
Junction Temperature
200
150
°C/W
°C
TSTG
Storage Temperature
-55 to +150
°C
IB
PD
* note1) : Minimum land pattern size
Electrical Characteristics
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 10μA, IB = 0
160
V
BVCEO
BVEBO
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
160
5
V
V
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
VCB = 120V, IE = 0
VBE = 5V, IC = 0
hFE
VCE (sat)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE = 5V, IC = 100mA
IC = 500mA, IB = 50mA
VBE (on)
fT
Base-Emitter On Voltage
Current Gain Bandwidth Product
VCE = 5V, IC = 500mA
VCE = 5V, IC = 100mA
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
Cob
© 2011 Fairchild Semiconductor Corporation
FMBS2383 Rev. A0
80
100
100
nA
nA
160
1.0
V
1.0
V
MHz
30
pF
120
www.fairchildsemi.com
1
FMBS2383 — NPN Epitaxial Silicon Transistor
April 2011
1
1000
IC = 10 IB
VCE(sat),[V] SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE = 5V
o
TA = 125 C
o
TA = 100 C
100
o
TA = 75 C
o
Ta = 25 C
o
TA = 125 C
o
TA = 100 C
0.1
o
TA = 75 C
o
TA = 25 C
0.01
10
1
10
100
1
1000
10
100
1000
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
500
10
VCE = 5V
IC [mA], COLLECTOR CURRENT
VBE(sat)[V], SATURATION VOLTAGE
IC = 10 IB
o
o
TA = 25 C
TA = 75 C
1
o
TA = 125 C
o
TA = 100 C
0.1
1
10
100
400
o
TA = 125 C
300
o
TA = 100 C
200
o
TA = 75 C
o
TA = 25 C
100
0
0.3
1000
IC [mA], COLLECTOR CURRENT
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VBE(on) [V], BASE-EMITTER ON VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
IEBO[nA], Emitter Cut-off Current
ICBO[nA], Collector Cut-off Current
100
o
TA = 125 C
10
o
TA = 100 C
1
o
TA = 75 C
0.1
o
TA = 25 C
TA = 125 C
1
o
TA = 100 C
0.1
o
TA = 75 C
0.01
o
TA = 25 C
1E-3
0.01
10
1
100
2
3
4
5
6
7
8
9 10
VEB [V], Emitter-Base Voltage
VCB [V], Collector-Base Voltage
Figure 5. Collector-Base Cutoff Current
Figure 6. Emitter-Base Cutoff Current
© 2011 Fairchild Semiconductor Corporation
FMBS2383 Rev. A0
o
10
www.fairchildsemi.com
2
FMBS2383 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
40
250
f = 1MHz
35
Cib [pF], Input Capacitance
Cob [pF], Output Capacitance
f = 1MHz
30
25
20
15
10
150
100
0
2
4
6
8
10
12
0
VCB [V], Collector-Base Voltage
100
1
2
3
4
5
VCB [V], Collector-Base Voltage
Figure 7. Output Capacitance
Transient Thermal Resistance, Rthja
200
Figure 8. Input Capacitance
50%
30%
10%
10
Rthja=200C/W
5%
2%
1
D=1%
Single Pulse
0.1
0.01
1E-4
1E-3
0.01
0.1
1
10
100
1000
time(sec)
Figure 9. Transient Thermal Resistance
© 2011 Fairchild Semiconductor Corporation
FMBS2383 Rev. A0
www.fairchildsemi.com
3
FMBS2383 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)
FMBS2383 — NPN Epitaxial Silicon Transistor
Physical Dimensions
SuperSOTTM-6
Dimensions in Millimeters
© 2011 Fairchild Semiconductor Corporation
FMBS2383 Rev. A0
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative /
In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I53
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