FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : fT=120MHz E C 1 6 2 5 3 4 C B C C SuperSOTTM-6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 160 160 V V VEBO IC Emitter-Base Voltage Collector Current 5 800 V mA Base Current Power Dissipation 160 630 mA mW RθJA* TJ Thermal Resistance, Junction to Ambient Junction Temperature 200 150 °C/W °C TSTG Storage Temperature -55 to +150 °C IB PD * note1) : Minimum land pattern size Electrical Characteristics Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10μA, IB = 0 160 V BVCEO BVEBO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 160 5 V V ICBO IEBO Collector Cut-off Current Emitter Cut-off Current VCB = 120V, IE = 0 VBE = 5V, IC = 0 hFE VCE (sat) DC Current Gain Collector-Emitter Saturation Voltage VCE = 5V, IC = 100mA IC = 500mA, IB = 50mA VBE (on) fT Base-Emitter On Voltage Current Gain Bandwidth Product VCE = 5V, IC = 500mA VCE = 5V, IC = 100mA Output Capacitance VCB = 10V, IE = 0, f = 1MHz Cob © 2011 Fairchild Semiconductor Corporation FMBS2383 Rev. A0 80 100 100 nA nA 160 1.0 V 1.0 V MHz 30 pF 120 www.fairchildsemi.com 1 FMBS2383 — NPN Epitaxial Silicon Transistor April 2011 1 1000 IC = 10 IB VCE(sat),[V] SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 5V o TA = 125 C o TA = 100 C 100 o TA = 75 C o Ta = 25 C o TA = 125 C o TA = 100 C 0.1 o TA = 75 C o TA = 25 C 0.01 10 1 10 100 1 1000 10 100 1000 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 500 10 VCE = 5V IC [mA], COLLECTOR CURRENT VBE(sat)[V], SATURATION VOLTAGE IC = 10 IB o o TA = 25 C TA = 75 C 1 o TA = 125 C o TA = 100 C 0.1 1 10 100 400 o TA = 125 C 300 o TA = 100 C 200 o TA = 75 C o TA = 25 C 100 0 0.3 1000 IC [mA], COLLECTOR CURRENT 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VBE(on) [V], BASE-EMITTER ON VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 IEBO[nA], Emitter Cut-off Current ICBO[nA], Collector Cut-off Current 100 o TA = 125 C 10 o TA = 100 C 1 o TA = 75 C 0.1 o TA = 25 C TA = 125 C 1 o TA = 100 C 0.1 o TA = 75 C 0.01 o TA = 25 C 1E-3 0.01 10 1 100 2 3 4 5 6 7 8 9 10 VEB [V], Emitter-Base Voltage VCB [V], Collector-Base Voltage Figure 5. Collector-Base Cutoff Current Figure 6. Emitter-Base Cutoff Current © 2011 Fairchild Semiconductor Corporation FMBS2383 Rev. A0 o 10 www.fairchildsemi.com 2 FMBS2383 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics 40 250 f = 1MHz 35 Cib [pF], Input Capacitance Cob [pF], Output Capacitance f = 1MHz 30 25 20 15 10 150 100 0 2 4 6 8 10 12 0 VCB [V], Collector-Base Voltage 100 1 2 3 4 5 VCB [V], Collector-Base Voltage Figure 7. Output Capacitance Transient Thermal Resistance, Rthja 200 Figure 8. Input Capacitance 50% 30% 10% 10 Rthja=200C/W 5% 2% 1 D=1% Single Pulse 0.1 0.01 1E-4 1E-3 0.01 0.1 1 10 100 1000 time(sec) Figure 9. Transient Thermal Resistance © 2011 Fairchild Semiconductor Corporation FMBS2383 Rev. A0 www.fairchildsemi.com 3 FMBS2383 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) FMBS2383 — NPN Epitaxial Silicon Transistor Physical Dimensions SuperSOTTM-6 Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation FMBS2383 Rev. A0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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