FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm (typ.) High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5051VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications in the 13.75 to 14.5GHz frequency range. This product is well suited for VSAT applications as it offers high power, high gain, and low VSWR. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Rating Unit Drain-Source Voltage VDD 8 V Gate-Source Voltage VGG -3 V Input Power Pin 8 dBm Storage Temperature Tstg -65 to +175 °C Operating Case Temperature Top -40 to +85 °C Fujitsu recommends the following conditions for the reliable operation of GaAs modules: 1. The drain operating voltage (VDD) should not exceed 5 volts. 2. The gate operating voltage (VGG) should not exceed 0 volts. ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25°C) Item Frequency Range Symbol Test Conditions Min. f Limit Typ. Max. Unit GHz 13.75-14.5 Pout 30.8 31.5 - dBm Linear Gain GL 30.0 31.5 - dB Gain Flatness ∆G - 1.5 2 dB Output Power (Pin=3dBm) VDD = 5V VGG = 0V f =13.75 to 14.5GHz Input VSWR VSWRi - 2:1 3:1 - Output VSWR VSWRo - 2:1 3:1 - - 800 1000 mA DC Input Current IDD VDD = 5V, VGG = 0V CASE STYLE: VF Edition 1.1 May 2001 G.C.P.: Gain Compression Point 1 FMM5051VF 13.75-14.5GHz Power Amplifier MMIC OUTPUT POWER vs. INPUT POWER 32 28 26 24 22 1000 20 800 18 600 -12 -10 -8 -6 -4 -2 0 2 IDD(mA) Output Power (dBm) 30 VDD=5V VGG=0V f=14.5GHz 4 Input Power (dBm) Output Power (dBm) OUTPUT POWER vs. FREQUENCY 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 VDD=5V VGG=0V IDD=800mA P1dBm -4dBm -8dBm -12dBm 12.5 13 13.5 14 Frequency (GHz) 2 14.5 15 15.5 FMM5051VF 13.75-14.5GHz Power Amplifier MMIC S11 +j50 +j100 +j25 +j10 S22 +j50 +j100 +j25 +j250 17.0 +j250 +j10 16.0 13.0 25 0 50Ω 100 17.0 10 0 16.0 50Ω 14.0 14.0 13.0 15.0 -j10 100 15.0 11.0GHz -j10 -j250 -j250 12.0 12.0 11.0GHz -j25 -j25 -j100 -j100 -j50 -j50 S-PARAMETERS VDD = 5V, VGG = 0V S21 S12 MAG ANG MAG ANG FREQUENCY S11 (MHZ) MAG ANG 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 .740 .739 .627 .518 .178 .239 .400 .406 .450 .467 .600 .711 .785 -81.857 -101.149 -116.071 -139.881 168.355 6.386 -37.02 -70.73 -105.697 -149.353 -170.36 167.121 150.759 13.457 18.257 24.049 32.716 39.042 39.41 36.17 31.57 24.022 17.462 11.478 7.015 4.078 177.785 141.305 104.138 57.683 2.669 -56.752 -109.235 -164.016 140.215 88.766 39.618 -6.136 -44.014 .003 .001 .003 .002 .002 .003 .003 .003 .003 .001 .004 .005 .009 157.794 0.176 -126.024 -102.594 -122.226 -137.041 -154.964 -143.88 -152.991 -176.233 -175.798 -172.492 174.247 S22 MAG ANG .709 .701 .584 .386 .182 .206 .122 .093 .247 .273 .182 .069 .210 -37.611 -71.027 -91.825 -114.205 -96.445 -84.57 -112.619 92.18 49.713 22.654 -10.138 -112.219 174.86 Download S-Parameters, click here RECOMMENDED BIAS CIRCUIT 1000pF 1000pF 50Ω 50Ω VGG RFin VDD 3 4 2 5 1 6 50Ω VDD RFout VDD 50Ω 1000pF 1000pF Note: The R/C networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. 3 FMM5051VF 13.75-14.5GHz Power Amplifier MMIC Case Style "VF" 17.78 (0.70) 13.46 (0.530) 8.38 (0.330) INDEX 4-C 1.52 (0.060) 6.4 (0.253) PIN ASSIGNMENT 3 6 4-0.5 (0.020) 5 4 2-0.3 (0.012) 1.0 MIN (0.039) 2-R 1.22 (0.048) (4-R 0.5) (0.020) 0.125 (0.005) 1.02 (0.040) 3.0 MAX (0.118) Pin Symbol 1. 2. 3. 4. 5. 6. VDD RF in VGG VDD RF out VDD Unit: mm(inches) 0.51 (0.020) 0.3±0.15 7.88 (0.310) 0.5±0.15 (0.020) 6.63 (0.260) 2 2.44 (0.096) 6.63 (0.261) 1 1.0 MIN (0.039) 0.5±0.3 8.33 (0.328) 0.5±0.3 0.5±0.15 (0.020) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0501M200 4