FAIRCHILD FMM7G30US60N

FMM7G30US60N
Compact & Complex Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and
general inverters where short-circuit ruggedness is
required.
Features
•
•
•
•
•
•
•
•
Short Circuit rated Time ; 10us @ TC =100°C, VGE = 15V
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 30A
High Input Impedance
Built in Brake & 3 Phase Rectifier Circuit
Fast & Soft Anti-Parallel FWD
Built-in NTC Thermistor
UL Certified No. E209204
Package Code : 24PM-AA
P
GU
R
•
•
•
•
B
S
Application
P+
EU
T
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
GB
N
-GU
N-
GV
GW
EV
EW
U
V
-GV
-GW
W
E
T1
NTC
T2
Internal Circuit Diagram
Absolute Maximum Ratings
Inverter
&
Brake
Converter
Common
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
VRRM
IO
IFSM
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
@ TC = 80°C
Pulsed Collector Current
Diode Continuous Forward Current
@ TC = 80°C
Diode Maximum Forward Current
Maximum Power Dissipation
@ TC = 25°C
Short Circuit Withstand Time
@ TC = 100°C
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
FMM7G30US60N
600
± 20
30
60
30
60
104
10
1600
30
Units
V
V
A
A
A
A
W
us
V
A
300
A
369
A2s
I2t
TJ
Operating Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
VISO
Isolation Voltage
Mounting part Screw
2500
4.0
V
N.m
Mounting Torque
Energy pulse @ 1Cycle at 60Hz
@ AC 1minute
@ M4
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2003 Fairchild Semiconductor Corporation
FMM7G30US60N Rev. A
FMM7G30US60N
IGBT
C
Symbol
Parameter
Test Conditions
= 25°C unless otherwise noted
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
5.0
--
6.5
2.1
8.5
2.7
V
V
----
2100
270
36
----
pF
pF
pF
-------------
110
90
150
130
0.9
0.58
100
90
150
200
0.98
0.9
150
200
200
250
--150
200
200
400
---
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
VCC = 300 V, VGE = 15V
100°C
10
--
--
us
VCE = 300 V, IC = 30A,
VGE = 15V
----
90
20
35
150
40
70
nC
nC
nC
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
©2003 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 30A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 30A,
RG = 15Ω, VGE = 15V,
Inductive Load, TC = 125°C
@ TC =
FMM7G30US60N Rev. A
FMM7G30US60N
Electrical Characteristics of IGBT @ Inverter & Brake T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
IF = 30A
di / dt = 60 A/us
VFM
Diode Forward Voltage
IRRM
Repetitive Reverse Current
Max.
2.8
--
2.0
--
--
90
180
--
130
--
TC = 25°C
--
2.2
3.4
TC = 100°C
--
3.4
--
TC = 25°C
--
400
600
TC = 100°C
--
880
--
Units
V
ns
A
nC
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 30A
TC = 100°C
VR = VRRM
Typ.
2.0
TC = 100°C
C
Parameter
Min.
--
TC = 25°C
Electrical Characteristics of DIODE @ Converter T
Symbol
= 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 30A
TC = 100°C
Min.
--
Typ.
1.1
Max.
1.5
--
1.0
--
TC = 25°C
--
--
8
TC = 100°C
--
5
--
Units
V
mA
Thermal Characteristics
Inverter
Brake
Converter
Weight
Symbol
RθJC
RθJC
RθJC
RθJC
RθJC
Junction-to-Case
Junction-to-Case
Junction-to-Case
Junction-to-Case
Junction-to-Case
Weight of Module
Parameter
(IGBT Part, per 1/6 Module)
(DIODE Part, per 1/6 Module)
(IGBT Part)
(DIODE Part)
(DIODE Part, per 1/6 Module)
Typ.
-----210
Max.
1.2
1.5
1.2
1.5
1.3
--
Units
°C/W
°C/W
°C/W
°C/W
°C/W
g
NTC Thermistor Characteristics
Thermistor
Symbol
R25
R100
B(25/100)
©2003 Fairchild Semiconductor Corporation
Parameter
Rated Resistance @ Tc = 25°C
Rated Resistance @ Tc = 100 °C
B - Value
Tol.
+/- 5 %
+/- 5 %
+/- 3 %
Typ.
5.0
0.415
3692
Units
KΩ
KΩ
FMM7G30US60N Rev. A
FMM7G30US60N
Electrical Characteristics of DIODE @ Inverter & Brake T
0
8
TC = 25 C
15V
16V
18V
0
6
0
6
20V
VGE = 10V
0
4
0
4
0
2
0
2
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
0
8
0
0
1
o
0
0
6
]
V
[
)
t
a
s
(
E
]
V
[
12V
16V
60 A
5
.
2
VGE = 10V
0
4
30 A
0
.
2
0
2
15 A
5
.
1
0
5
1
0
0
1
0
5
0
6
)
t
a
s
(
E
C
]
C
o
[
TC
,
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
]
V
5[
V
4,
e
g
a
t
l
o
3V
r
e
t
t
i
m
2E
r
o
t
c
1e
l
l
o
C
0
0
5
0.
1
0
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
Common Emitter
VGE = 15 V
0
.
3
0
6
18V
)
t
a
s
(
E
C
5
.
3
0
8
15V
20V
0
.
4
14V
o
TC = 125 C
5
)
t
a
s
(
E
C
Fig 2. Typical Saturation Voltage
Characteristics
0
0
1
Common Emitter
VC
,
e
4g
a
t
l
o
V
r
3e
t
t
i
m
E
2r
o
t
c
e
C
l
l
1o
0
]
0V
1[
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
1E
r
o
t
c
e
l
l
o
C
Fig 1. Typical Output Characteristics
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
FMM7G30US60N
0
0
1
0
2
1
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
14V 12V
Common Emitter
Common Emitter
VGE = 15 V
TC = 25℃ ━━
TC = 125℃ ------
Fig 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 3. Typical Saturation Voltage
Characteristics
0
0
0
5
r
e
t
t
i
m
E
n
o
m
m
o
C
5
z
H
M
1
=
f
, C
o
V
5
0 2
= =
E
G
V TC
-3
10
-2
10
-1
10
0
Fig 5. Transient Thermal Impedance
©2003 Fairchild Semiconductor Corporation
10
1
]
V
10
Rectangular Pulse Duration [sec]
0 [E
1
C
-4
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
1 E
r
o
t
c
e
l
l
o
C
10
1
.
0
-5
0
10
s
e
r
C
IGBT :
DIODE :
0
0
0
1
0.01
0.005
s
e
o
C
0.1
0
0
0
2
]
F
p
[
e
c
n
a
t
i
c
a
p
a
C
0
0
0
3
Thermal Response, Zthjc [℃/W]
s
e
i
C
0
0
0
4
1
Fig 6. Capacitance Characteristics
FMM7G30US60N Rev. A
0
0
0
1
f
T
r
T
0
0
1
0
0
1
0
8]
[
g
R
,
e
0c
6n
a
t
s
i
s
e
R
0e
4t
a
G
0
2
0
0
1
0
8]
[
g
R
,
e
0c
6n
a
t
s
i
s
e
R
G
e
0t
4a
0
2
Ω
Ω
Fig 7. Turn-On Characteristics vs.
Gate Resistance
0
0
0
0
1
Fig 8. Turn-Off Characteristics vs.
Gate Resistance
0
0
0
1
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
n
o
E
f
f
o
E
r
T
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15V, RG = 15Ω
TC = 25℃ ━━
TC = 125℃ ------
n
o
T
0
0
0
1
]
J
u
[
s
s
o
L
g
n
i
h
c
t
i
w
S
f
f
o
T
n
o
T
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
FMM7G30US60N
0
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
0
0
1
0
6
Fig 10. Turn-On Characteristics vs.
Collector Current
0
0
0
0
1
0
0
0
1
0
0
0
1
f
f
o
T
f
f
o
E
f
T
0
0
1
0
0
1
]
J
u
[
s
s
o
L
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15V, RG = 15Ω
TC = 25℃ ━━
TC = 125℃ ------
n
o
E
Common Emitter
VGE = ± 15V, RG = 15Ω
T C = 25℃ ━━
T C = 125℃ ------
0 ]
5 A
[
IC
,
t
n
e
0 r
4 r
u
C
r
o
t
c
o
C
Fig 9. Switching Loss vs. Gate Resistance
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
e
0 l
3 l
0
2
0
0
1
0
8
]
[
g
R
,
e
0 c
6 n
a
t
s
i
s
e
R
0 e
4 t
a
G
0
2
Ω
0
6
0
5
]
A
[
IC
0,
4t
n
e
r
r
u
C
r
0o
3t
c
e
l
l
o
C
0
2
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
©2003 Fairchild Semiconductor Corporation
0
6
0
5
0
4
0
3
0
2
Fig 11. Turn-Off Characteristics vs.
Collector Current
Fig 12. Switching Loss vs. Collector Current
FMM7G30US60N Rev. A
FMM7G30US60N
5
1
r
e
t
t
i
m
E
n
o
m
m
o
C
100
V
0
0
3
C
C
6
Collector Current, I C [A]
V
0
0
2
E
G
V
0
0
1
=
V
C
o
0 5
1 2
= =
RL TC
9
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
e
t
a
G
Ω
2
1
]
V
[
10
3
1
0
0
0
1
0
8
0
6
0
4
0
2
0
0.1
Single Nonrepetitive
Pulse TJ ≤ 125℃
V GE = 15V
RG = 15 Ω
0
100
]
C
n
[
g
Q
,
e
g
r
a
h
C
e
t
a
G
[A]
70
Peak Reverse Recovery Current, Irr [A]
Reverse Recovery Time, Trr [x10ns]
Common Cathode
V GE = 0V
T C = 25℃
T C = 125℃
80
F
400
500
600
700
20
90
60
50
40
30
20
10
0
0
1
2
3
T rr
10
Irr
Common Cathode
di/dt = 60A/us
TC = 25℃
TC = 100℃
1
0.5
5
4
10
15
20
25
30
Forward Current, IF [A]
Forward Voltage, V F [V]
Fig 15. Forward Characteristics
Fig 16. Reverse Recovery Characteristics
0
0
0
1
IF, Instantaneous Forward Current [A]
100
0
0
1
TC = 125℃
0
1
1
1
.
0
25℃
1
0
.
0
I R, Reverse Current [uA]
300
Fig 14. RBSOA Characteristics
Fig 13. Gate Charge Characteristics
Forward Current, I
200
Collector-Emitter Voltage, V CE [V]
TC =125℃
25℃
10
1
3
E
1
0
0
6
1
0
0
2
1
0
0
8
0
0
4
0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
VF, Forward Voltage [V]
VR, Reverse Voltage [V]
Fig 17. Rectifier( Converter ) Characteristics
©2003 Fairchild Semiconductor Corporation
Fig 18. Rectifier( Converter ) Characteristics
FMM7G30US60N Rev. A
FMM7G30US60N
0
0
8
3
0
5
7
3
Ω
0
5
6
3
0
0
6
3
0
5
5
3
1
0
0
5
3
t
n
a
t
s
n
o
C
X
/
5
2
B
0
0
7
3
0
1
]
K
[
R
,
e
c
n
a
t
s
i
s
e
R
0
5
4
3
0
0
1
5
7
]
C
o
0 [
5 e
r
u
t
a
r
m
e
T
5 e
2 p
0
5
2
00
4
3
5
2
1
0
0
1
©2003 Fairchild Semiconductor Corporation
5
7
0
5
]
C
o
[
T
,
e
r
u
t
a
r
e
T
e
5 p
2 m
0
5
2
-
Fig 19. NTC Characteristics
Fig 20. NTC Characteristics
FMM7G30US60N Rev. A
FMM7G30US60N
Package Dimension
24PM-AA
-. Pin Coordinate
107.0 ±0.80
4- Ø6.0
4- Ø2.0
±0.10 Dp
93.0 ±0.30
4.5
2- Ø5.5 ±0.30
21
10
35.0 ±0.30
Name Plate
6
26.67±0.20
42.7±0.50
7.1
16.8±0.50
32.0±1.00
1.15 ±0.20 * 0.8t
15.3±0.50
x
y
1
0.0
0.0
2
-11.43
0.0
3
-22.86
0.0
4
-34.29
0.0
5
-45.72
0.0
6
-57.15
0.0
7
-66.27
5.71
8
-66.27
13.33
9
-66.27
28.57
10
-66.27
36.19
11
-41.91
41.90
12
-38.10
41.90
13
-30.48
41.90
14
-26.67
41.90
15
-19.05
41.90
16
-15.24
41.90
17
-7.62
41.90
18
-3.81
41.90
19
0.0
41.90
20
3.81
41.90
21
7.62
41.90
22
12.93
32.38
23
12.93
28.57
24
12.93
13.33
1
20.95±0.20
41.9 ±0.30
45.0 ±0.80
Mounting-Hole
Coordinate
Pin
#No
• datum pin : #1
• Pin Tilt : ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
FMM7G30US60N Rev. A
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2