SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – MARCH 2001 FEATURES * FMMTA56 ✪ Gain of 50 at IC=100mA E C PARTMARKING DETAIL FMMTA56 - 2G FMMTA56R - MB B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA56 UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO -80 V V CEO -80 V Emitter-Base Voltage V EBO -4 V Continuous Collector Current IC -500 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMTA56 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V (BR)CEO -80 V I C=-1mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO -4 V I E=-100 µ A, I C=0 Collector-Emitter Cut-Off Current I CES -0.1 µA V CE=-60V Collector-Base Cut-Off Current I CBO -0.1 µA V CB=-80V, I E=0 V CB=-60V, I E=0 Static Forward Current Transfer Ratio h FE Collector-Emitter Saturation Voltage V CE(sat) -0.25 V I C=-100mA, I B=-10mA* Base-Emitter Turn-On Voltage V BE(on) -1.2 V I C =-100mA, V CE=-1V* Transition Frequency fT MHz I C=-10mA, V CE=-2V f=100MHz 50 50 100 I C=-10mA, V CE=1V* I C=-100mA, V CE=1V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% TBA