FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current TJ, Tstg Operating and Storage Junction Temperature Range - Continuous 2.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Characteristic Max Units FPN430 / FPN430A 1.0 W Thermal Resistance, Junction to Case 50 °C/W Thermal Resistance, Junction to Ambient 125 °C/W PD Total Device Dissipation RθJC RθJA 1999 Fairchild Semiconductor Corporation (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO IC = 10 mA, IB = 0 BVCBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 30 V BVEBO Emitter-Base Breakdown Voltage IC = 100 µA, IE = 0 35 V IE = 100 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 100°C VEB = 4.0 V, IC = 0 5.0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current V 100 10 100 nA µA nA mV mV mV V V ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2.0 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V IC = 1.0 A, IB = 100 mA VBE(sat) Base-Emitter Saturation Voltage IC = 2.0 A, IB = 200 mA IC = 1.0 A, IB = 100 mA 500 450 800 1.25 VBE(on) Base-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V 1.0 430 430A 100 250 60 40 430 430A SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz FT Transition Frequency IC = 100 mA, VCE = 5.0 V, f = 100 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. 25 100 pF MHz FPN430 / FPN430A PNP Low Saturation Transistor (continued) 1.6 β = 10 1.4 1.2 1 - 40 °C 0.8 0.6 25 °C 125 °C 0.4 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 V BEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter On Voltage vs Collector Current 1.6 Vce = 2.0V 1.4 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.0001 Collector-Emitter Saturation Voltage vs Collector Current 10 120 1.2 β = 10 f V=ce1.0MHz = 2.0V - 40°C 100 1 125°C 0.8 0.6 25°C 0.4 C ibo 80 60 Cobo 40 20 0.2 0 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 0 0.1 10 PD - POWE R DIS SIPATION (W) Vce = 2.0V 500 400 125°C 300 25°C 200 100 0 0.0001 - 40°C 50 100 1 TO-226 0.75 0.5 0.25 0 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) Power Dissipation vs Ambient Temperature Current Gain vs Collector Current 600 H FE - CURRENT GAIN 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) Input/Output Capacitance vs Reverse Bias Voltage CAPACITANCE (pf) VCESAT - COLLECTOR-EMITTER VOLTAGE (V) VBESAT -BASE-EMITTER SATURATION VOLTAGE(V) Typical Characteristics 10 0 25 50 75 100 TEMPE RATURE (°C) 125 150 FPN430 / FPN430A PNP Low Saturation Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G