FS10AS-2 High-Speed Switching Use Nch Power MOS FET REJ03G0244-0200 Rev.2.00 Nov 21, 2006 Features • • • • • Drive voltage : 10 V VDSS : 100 V rDS(ON) (max) : 0.23 Ω ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 2, 4 4 1. 2. 3. 4. 1 12 3 Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Ratings 100 ±20 10 40 10 10 40 30 – 55 to +150 – 55 to +150 Unit V V A A A A A W °C °C — 0.32 g Mass Rev.2.00 Nov 21, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value FS10AS-2 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Rev.2.00 Nov 21, 2006 Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr page 2 of 6 Min. 100 — — 2.0 — — — — — — — — — — — — — Typ. — — — 3.0 0.16 0.80 9.0 600 125 40 18 20 30 18 1.0 — 100 Max. — ±0.1 0.1 4.0 0.23 1.15 — — — — — — — — 1.5 4.17 — Unit V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 5 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 50 V, ID = 5 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 5 A, VGS = 0 V Channel to case IS = 10 A, dis/dt = –100 A/µs FS10AS-2 Performance Curves Maximum Safe Operating Area 5 3 2 50 Drain Current ID (A) 40 30 20 10 0 50 100 Drain Current ID (A) 200 PD = 30W 4 5V 2.0 3.0 4.0 7V 10V 6V 8 6 4 5V 2 0 5.0 0 0.4 0.8 1.2 1.6 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 5.0 Tc = 25°C Pulse Test 4.0 3.0 ID = 15A 2.0 10A 5A 1.0 4 8 12 16 Gate-Source Voltage VGS (V) Rev.2.00 VGS = 20V Tc = 25°C Pulse Test 7V 8 1.0 10 10V VGS = 20V 6V 0 10ms DC Output Characteristics (Typical) 12 0 1ms 100 7 5 3 2 Output Characteristics (Typical) 16 0 100µs Drain-Source Voltage VDS (V) Tc = 25°C Pulse Test 0 101 7 5 3 2 Case Temperature Tc (°C) 20 Drain-Source On-State Voltage VDS(ON) (V) 150 Drain Current ID (A) 0 tw = 10µs 10–1 Tc = 25°C 7 Single Pulse 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 Nov 21, 2006 page 3 of 6 20 Drain-Source On-State Resistance rDS(ON) (Ω) Drain Power Dissipation PD (W) Drain Power Dissipation Derating Curve 2.0 0.5 Tc = 25°C Pulse Test 0.4 0.3 0.2 VGS = 10V 20V 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Drain Current ID (A) FS10AS-2 Forward Transfer Admittance vs. Drain Current (Typical) 16 12 8 4 0 Capacitance (pF) Tc = 25°C VDS = 10V Pulse Test 0 4 8 12 16 Tc = 25°C 101 7 5 4 3 75°C 125°C 2 100 0 10 3 5 7 101 2 5 7 102 3 Switching Characteristics (Typical) Tch = 25°C f = 1MHz VGS = 0V 103 7 5 3 2 Ciss 102 7 5 3 2 Coss 102 7 5 4 3 td(off) 2 td(on) tf 101 7 5 4 3 tr Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 2 Crss 100 100 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 2 3 5 7 101 2 5 7 102 3 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 40 VGS = 0V Pulse Test Tch = 25°C ID = 10A 16 12 VDS = 20V 8 50V 80V 4 0 2 Capacitance vs. Drain-Source Voltage (Typical) 0 4 8 12 16 Gate Charge Qg (nC) Nov 21, 2006 page 4 of 6 20 Source Current IS (A) Gate-Source Voltage VGS (V) 2 Drain Current ID (A) 20 Rev.2.00 102 7 VDS = 5V Pulse Test 5 4 3 Gate-Source Voltage VGS (V) 104 7 5 3 2 101 20 Switching Time (ns) Drain Current ID (A) 20 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 32 24 Tc = 125°C 75°C 25°C 16 8 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 Gate-Source Threshold Voltage VGS(th) (V) 101 7 5 4 3 VGS = 10V ID = 1/2 ID Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 100 150 Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 5 3 2 PDM 0.1 0.05 0.02 0.01 Single Pulse tw D= T tw T 10–1 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Channel Temperature Tch (°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS10AS-2 Nov 21, 2006 page 5 of 6 tr 90% td(off) tf FS10AS-2 Package Dimensions Previous Code 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZA-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name – T +Direction (1 or 2) +3 75 Type name Plastic Magazine (Tube) Note : Please confirm the specification about the shipping in detail. Rev.2.00 Nov 21, 2006 page 6 of 6 Standard order code example FS10AS-2-T13 FS10AS-2 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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