RED Item No.: 193150 1. This specification applies to GaAlAs / GaAlAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy or Al n-Electrode 120 260 180 p-Electrode 260 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions VF IF = 20 mA Reverse current IR VR = 5 V Luminous intensity * IV IF = 20 mA Forward voltage min typ max Unit 1,85 2,30 V 10 26,0 Peak wavelength λP IF = 20 mA 650 * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. µA mcd nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]