NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT450 ISSUE 1 SEPT 93 FEATURES * 45 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt B C E E-Line TO92 Compatible REFER TO ZTX450 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Sustaining Voltage UNIT CONDITIONS. 60 V IC=100µ A, IE=0 VCEO(SUS) 45 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 µA VCB=45V, IE=0 Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC=150mA, IB=15mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=150mA, IB=15mA* Static Forward Current hFE Transfer Ratio 100 15 Transition Frequency fT 150 Output Capacitance Cobo TYP. MAX. 300 IC=150mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz 15 3-31 pF VCB=10V, f=1MHz