FZT948 FZT949 SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFE characteristics specified upto 20 Amps C E C B PARTMARKING DETAILS — DEVICE TYPE IN FULL ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT948 FZT949 UNIT Collector-Base Voltage V CBO -40 -50 V Collector-Emitter Voltage V CEO -20 -30 V Emitter-Base Voltage V EBO -6 V Peak Pulse Current I CM -20 A Continuous Collector Current IC Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:Tstg -6 -5.5 A 3 W -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum TBA FZT948 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO -40 Collector-Emitter Breakdown Voltage V (BR)CER Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. -55 V I C=-100 µ A -40 -55 V I C =-1 µ A, RB ≤ 1k Ω V (BR)CEO -20 -30 V I C=-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -6 -8 V I E=-100 µ A Collector Cut-Off Current I CBO -50 -1 nA µA V CB=-30V V CB=-30V, T amb=100°C Collector Cut-Off Current I CER R ≤ 1k Ω -50 -1 nA µA V CB=-30V V CB=-30V, T amb=100°C Emitter Cut-Off Current I EBO -10 nA V EB=-6V Collector-Emitter Saturation V CE(sat) Voltage -60 -110 -200 -360 -130 -180 -280 -450 mV mV mV mV I C=-0.5A, I B=-10mA* I C=-2A, I B=-200mA* I C=-4A, I B=-400mA* I C=-6A, I B=-250mA* Base-Emitter Saturation Voltage V BE(sat) -1050 -1200 mV I C=-5A, I B=-300mA* Base-Emitter Turn-On Voltage V BE(on) -870 -1050 mV I C =-6A, V CE=-1V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 80 MHz I C=-100mA, V CE=-10V f=50MHz Output Capacitance C obo 163 pF V CB=-10V, f=1MHz Switching Times t on t off 120 126 ns ns I C=-4A, I B1=-400mA I B2=400mA, V CC=-10V 100 100 75 60 15 200 200 160 130 40 I C=-10mA, V CE =-1V I C=-1A, V CE =-1V* I C=-5A, V CE =-1V* I C=-10A, V CE =-1V* I C=-20A, V CE =-2V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device RCE(sat)46mΩ at 5A TBA FZT948 TBA FZT949 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO -50 Collector-Emitter Breakdown Voltage V (BR)CER Collector-Emitter Breakdown Voltage MAX. UNIT CONDITIONS. -80 V I C=-100 µ A -50 -80 V I C =-1 µ A, RB ≤ 1k Ω V (BR)CEO -30 -45 V I C=-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -6 -8 V I E=-100 µ A Collector Cut-Off Current I CBO -50 -1 nA µA V CB=-40V V CB=-40V, T amb=100°C Collector Cut-Off Current I CER R ≤ 1k Ω -50 -1 nA µA V CB=-40V V CB=-40V, T amb=100°C Emitter Cut-Off Current I EBO -10 nA V EB=-6V Collector-Emitter Saturation V CE(sat) Voltage -50 -85 -190 -350 -75 -140 -270 -440 mV mV mV mV I C=-0.5A, I B=-20mA* I C=-1A, I B=-20mA* I C=-2A, I B=-200mA* I C=-5.5A, I B=-500mA* Base-Emitter Saturation Voltage V BE(sat) -1100 -1250 mV I C=-5.5A, I B=-500mA* Base-Emitter Turn-On Voltage V BE(on) -900 -1060 mV I C =-5.5A, V CE=-1V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 100 MHz I C=-100mA, V CE=-10V f=50MHz Output Capacitance C obo 122 pF V CB=-10V, f=1MHz Switching Times t on t off 120 130 ns ns I C=-4A, I B1=-400mA I B2=400mA, V CC=-10V 100 100 75 200 200 140 35 I C=-10mA, V CE =-1V I C=-1A, V CE =-1V* I C=-5A, V CE =-1V* I C=-20A, V CE =-2V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device RCE(sat)44mΩ at 4.5A TBA FZT949 TYPICAL CHARACTERISTICS IC/IB=50 1.6 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 0.8 0.6 0.01 0.001 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C +25°C -55°C 300 1.2 1.0 200 0.8 0.6 100 0.4 -55°C +25°C +100°C +175°C 1.6 VCE=1V hFE - Typical Gain 1.4 0 10 20 1.4 10 20 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0.001 1.4 0.01 0.1 0 10 20 1 0.1 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C +175°C 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 10 1 DC 1s 100ms 10ms 1ms 100µs 0.1 0.1 1 10 IC - Collector Current (Amps) Vce - Collector Voltage (V) VBE(on) v IC Safe Operating Area TBA 10 20 Single Pulse Test Tamb=25 °C 100 VCE=1V 1.0 0.001 0.01 IC - Collector Current (Amps) 1.2 0 0.001 IC - Collector Current (Amps) IC - Collector Current (A) hFE - Normalised Gain 1.0 IC - Collector Current (Amps) VBE(sat) - (Volts) 0.001 1.6 VBE - (Volts) 1.2 0.2 1.6 0 1.4 IC/IB=10 0.4 0.2 0 -55°C +25°C +175°C 1.6 VCE(sat) - (Volts) 1.4 VCE(sat) - (Volts) Tamb=25°C IC/IB=10 100