http://www.fujielectric.com/products/semiconductor/ 1MBI600V-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Junction temperature Operating junction temperature (under switching conditions) Case temperature Storage temperature Isolation voltage Between terminal and copper base (*1) Mounting (*2) Screw torque Terminals (*3) Symbols VCES VGES Conditions Ic Continuous Ic pulse -Ic -Ic pulse Pc Tj 1ms Tc=100°C Tc=25°C 1ms 1 device Tjop Maximum ratings 1200 ±20 600 720 1200 600 1200 3000 175 150 Tc Tstg Viso M5 ro M6 M4 M6 125 -40~+125 2500 6.0 2.0 5.0 AC : 1min. Units V V A W °C VAC Nm Note *1: All terminals should be connected together during the test. Note *2: Recommendable Value : 3.0-6.0 Nm (M5, M6) Note *3: Recommendable Value : 1.1-2.0 Nm (M4) Recommendable Value : 2.5-5.0 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 600mA VCE (sat) (terminal) Collector-Emitter saturation voltage VCE (sat) (chip) Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr Tj=25°C Tj=125°C Tj=150°C VGE = 15V IC = 600A Tj=25°C Tj=125°C Tj=150°C VGE = 0V, VCE = 10V, f = 1MHz VCC = 600V, IC = 600A VGE = ±15V, RG = 1.2Ω Tj=150°C, Ls=35nH VGE = 0V IF = 600A IF = 600A 1 Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 2.0 800 6.0 6.5 7.0 2.05 2.50 2.35 2.40 1.75 2.15 2.05 2.10 48.5 0.70 0.25 0.10 0.90 0.10 1.85 2.30 2.00 1.95 1.70 2.15 1.85 1.80 0.27 - Units mA nA V V nF µs V µs 1MBI600V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance (*4) Rth(c-f) Conditions IGBT FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.050 0.070 0.0063 - Units °C/W 1MBI600V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1400 1400 VGE=20V 15V 12V VGE= 20V 15V 1200 Collector current: Ic [A] Collector current: Ic [A] 1200 1000 800 10V 600 400 200 12V 1000 800 10V 600 400 8V 200 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage: VCE [V] 1 2 3 4 5 Collector-Emitter voltage: VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip 10 1400 Collector Current: Ic [A] 1200 Collector-Emitter Voltage: VCE [V] Tj=25°C 125°C 150°C 1000 800 600 400 200 8 6 4 Ic=1200A Ic=600A Ic=300A 2 0 0 0 1 2 3 Collector-Emitter Voltage: VCE [V] 5 4 Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] Gate Capacitance: Cies, Coes, Cres [nF] *** Cies 10 Cres Coes 1 20 20 25 Dynamic Gate Charge (typ.) Vcc=600V, Ic=600A, Tj= 25°C 100 10 15 Gate-Emitter Voltage: VGE [V] Gate Capacitance vs. Collector-Emitter Voltage VGE= 0V, ƒ= 1MHz, Tj= 25°C 0 10 30 VCE 0 Collector-Emitter voltage: VCE [V] VG 2000 4000 Gate charge: Qg [nC] 3 6000 1MBI600V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.2Ω, Tj=150°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.2Ω, Tj=125°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 toff ton 1000 tr 100 tf 10 0 200 400 600 1000 toff ton tr tf 100 10 800 1000 1200 1400 0 200 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] Switching time: ton, tr, toff, tf [nsec] toff ton tr tf 160 10 Tj=125oC Tj=150oC 140 120 Eon 80 60 Err 40 20 0 0 600 800 1000 1200 1400 Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=1.2Ω, Tj=150°C, Ls=35nH 1400 Tj=125oC Tj=150oC 1200 Collector current: Ic [A] Switching loss: Eon, Eoff, Err [mJ/pulse] 400 Collector current: Ic [A] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C 200 200 100 Gate resistance: RG [Ω] 250 Eoff 100 10 1 800 1000 1200 1400 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=1.2Ω, Tj=125°C, 150°C 10000 100 600 Collector current: Ic [A] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C 1000 400 Eon 150 Eoff 100 50 1000 800 600 400 200 Err 0 0 1 10 100 0 Gate resistance: RG [Ω] 400 800 1200 Collector-Emitter voltage: VCE [V] 4 1600 1MBI600V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=1.2Ω, Tj=125°C 1400 10000 Forward current: IF [A] 1200 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Tj=25°C 1000 800 125°C 600 400 150°C 200 1000 Irr trr 100 10 0 0 1 2 0 3 200 400 600 800 1000 1200 1400 Forward on voltage: VF [V] Forward current: IF [A] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, RG=1.2Ω, Tj=150°C Transient Thermal Resistance (max.) 1 Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 10000 1000 Irr trr 100 10 0 200 400 600 800 1000 1200 1400 Reverse recovery current: Irr [A] 1400 1200 Pmax=600kW 800 600 400 200 0 0 500 1000 0.01 0.01 0.1 Pulse Width : Pw [sec] FWD safe operating area (max.) Tj=150°C 1000 IGBT 0.001 0.001 Forward current: IF [A] FWD 0.1 1500 Collector-Emitter voltage: VCE [V] 5 1 1MBI600V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm 24 20 4-Ø6.5 29 20 G E E C 93 108 2-M6 6 25.7 36 2-M4 Equivalent Circuit Schematic 6 62 48 C 1MBI600V-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. 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