GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT80J101A High Power Switching Applications • Enhancement-Mode • High Speed: tf = 0.40 µs (max) (IC = 80 A) • Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 80 1ms ICP 160 Collector power dissipation (Tc = 25°C) PC 200 W Junction temperature Tj 150 °C Storage temperature Tstg −55~150 °C 0.8 N·m Collector current Screw torque A Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA VGE (OFF) VCE = 5 V, IC = 80 mA 3.0 6.0 V VCE (sat) (1) IC = 10 A, VGE = 15 V 2.0 VCE (sat) (2) IC = 80 A, VGE = 15 V 2.4 3.0 VCE = 10 V, VGE = 0, f = 1 MHz 5500 0.3 0.6 0.5 0.8 0.25 0.40 0.7 1.0 0.625 Collector-emitter saturation voltage Input capacitance Cies Rise time Turn-on time tr Switching time Fall time Turn-off time Thermal resistance 33 Ω ton tf toff Rth (j-c) VIN 15 V 0 −15 V V pF VOUT 3.75 Ω Gate-emitter cut-off voltage VCC = 300 V µs °C/W 961001EAA1 • TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-06-28 1/4 GT80J101A IC − VCE VCE − VGE 100 10 10 Tc = 25 °C VCE 80 Collector-emitter voltage Collector current 60 6 40 5 20 VGE = 4 V 0 0 2 4 6 8 Collector-emitter voltage VCE Common emitter (V) Common emitter 8 IC (A) 15 20 Tc = −40°C 8 10 20 6 60 4 2 0 0 10 IC = 80 A 40 4 8 VCE − VGE VCE Collector-emitter voltage 10 IC = 80 A 20 40 4 60 2 4 8 12 16 VGE 20 Tc = 125°C 8 10 6 IC = 80 A 20 40 4 60 2 0 0 24 (V) 4 8 12 16 Gate-emitter voltage IC − VGE 20 VGE 24 (V) VCE (sat) − Tc 100 4 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 5 V 80 IC (A) (V) Common emitter (V) (V) VCE Collector-emitter voltage 8 Gate-emitter voltage Collector current VGE 24 VCE − VGE Tc = 25°C 60 40 Tc = 125°C 20 25 0 0 20 10 Common emitter 0 0 16 Gate-emitter voltage (V) 10 6 12 2 4 −40 6 Gate-emitter voltage 8 VGE 10 (V) 12 Common emitter VGE = 15 V 3 80 2 50 30 IC = 10 A 1 0 −40 0 40 80 Case temperature 120 Tc 160 (°C) 2000-06-28 2/4 (V) (µs) Switching time 12 VCE = 150 V 8 100 50 4 5 IC = 80 A 3 VGG = ±15 V Tc = 25°C toff ton tr 1 tf 0.5 0.3 80 160 240 Gate charge QG 320 0.1 3 (nC) 5 10 30 50 100 Gate resistance RG 300 500 (Ω) C − VCE Switching time – IC 5 30000 Common emitter VCC = 300 V 3 RG = 33 Ω VGG = ±15 V 10000 (pF) (µs) Tc = 25°C 5000 Cies 3000 C 1 0.5 0.3 Capacitance Switching time toff ton tf 0.1 0 1000 500 300 Coes Common emitter VGE = 0 V f = 1 MHz tr 10 20 30 40 Collector current 50 60 IC 70 100 80 (A) 50 1 Tc = 25°C 3 Cres 5 10 30 50 Collector-emitter voltage 100 VCE 300 500 (V) Safe Operating Area * Single Non-Repetitive Pulse Tc = 25°C Curves must be Derated Linearly with Increase in Temperature. Rth (t) − tw 200 1 µs * 10 µs * 100 µs * IC max 100 (Pulsed) 30 IC max (Continuous) DC Operation 10 3 10 ms * 1 ms * 1 1 3 10 30 100 Collector-emitter voltage VCE 300 (V) 1000 102 Transient thermal resistance Rth (t) (°C/W) (V) VCC = 300 V RL = 1.88 Ω Tc = 25°C VGE Gate-emitter voltage Common emitter Common emitter 0 0 (A) VCE Switching time – RG 10 16 IC Collector-emitter voltage VCE, VGE − QG 20 Collector current (×10 V) GT80J101A Tc = 25 °C 101 100 10−1 10−2 10−3 10−5 10−4 10−3 10−2 Pulse width 10−1 tw 100 101 102 (s) 2000-06-28 3/4 GT80J101A Reverse Bias SOA 300 Collector current IC (A) 100 30 10 3 1 0.3 0.1 0 Tj < = 125°C VGE = +15 V −0 RG = 33 Ω 100 200 300 400 Collector-emitter voltage 500 VCE 600 700 (V) 2000-06-28 4/4