ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B GTS217E BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 22m 7A Description The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Package Dimensions REF. Millimeter Min. Max. - 1.20 0.05 0.15 b c 0.19 0.30 0.09 D 2.90 A A1 REF. E E1 Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.20 e L 0.45 0.75 3.10 S 0° 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Symbol Ratings Unit VDS 20 V VGS ±12 V Continuous Drain Current 3 ID @TA=25 7 A Continuous Drain Current 3 ID @TA=70 5.7 A 30 A 1.5 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.012 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 83 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GTS217E 3 Max. Unit /W Page: 1/4 ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS=VGS, ID=250uA gfs - 24 - S VDS=5V, ID=7A IGSS - - ±10 uA VGS= ±10V - - 1 uA VDS=16V, VGS=0 - - 5 uA VDS=16V, VGS=0 - - 22 - - 30 Qg - 9.3 - Gate-Source Charge Qgs - 0.6 - Gate-Drain (“Miller”) Change Qgd - 3.6 - Td(on) - 820 - Tr - 934 - Td(off) - 860 - Tf - 510 - Input Capacitance Ciss - 231 Output Capacitance Coss - 164 - Reverse Transfer Capacitance Crss - 137 - Symbol Min. Typ. Max. Unit VSD - - 1.0 V IS=1.0A, VGS=0V Reverse Recovery Time2 Trr - 15.2 - ns Reverse Recovery Charge Qrr - 6.3 - nC IS=7A, VGS=0V dI/dt=100A/ s Continuous Source Current (Body Diode) IS - - 2.5 A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time IDSS RDS(ON) m Test Conditions VGS=4.5V, ID=6.6A VGS=2.5V, ID=5.5A nC ID=7A VDS=10V VGS=4.5V ns VDS=10V ID=1A VGS=4.5V RG=6 RL=10 pF VGS=0V VDS=10V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions VD=VG=0V, VS=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GTS217E Page: 2/4 ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature 10 1 0.1 0.01 0.001 0.0001 0.00001 Fig 5. On-Resistance v.s. Gate-Source Voltage GTS217E Fig 6. Body Diode Characteristics Page: 3/4 ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Normalized Maximum Transient Thermal Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTS217E Page: 4/4