NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1616 █ APPLICATIONS Audio frequency power Aamplifier& Medium Speed switching Low frequency power amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T s tg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………750mW VCBO ——Collector-Base Voltage………………………………60V 1―Emitter，E 2―Collector，C 3―Base，B VCEO ——Collector-Emitter Voltage……………………………50V VE B O ——Emitter -Base Voltage………………………………6V IC——Collector Current……………………………………………1A ICP ——Collector Current（Pulse）…………………………………2A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ６０ Ｖ ＩＣ＝１０μＡ，ＩＥ＝０ BVCEO Collector-Emitter Breakdown Voltage ５０ Ｖ ＩＣ＝１ｍＡ，ＩＢ＝０ BVEBO Emitter-Base Breakdown Voltage ６ Ｖ ＩＥ＝１０μＡ，ＩＣ＝０ ICBO Collector Cut-off Current １００ ｎＡ ＶＣＢ＝６０Ｖ， ＩＥ＝０ IEBO Emitter Cut-off Current １００ ｎＡ ＶＥＢ＝６Ｖ， ＩＣ＝０ HFE（1） DC Current Gain １３５ ６００ ＶＣＥ＝２Ｖ， ＩＣ＝１００ｍＡ HFE（2） DC Current Gain ８１ ＶＣＥ＝２Ｖ， ＩＣ＝１Ａ VCE(sat) Collector- Emitter Saturation Voltage ０．１５ ０．３ Ｖ ＩＣ＝１Ａ， ＩＢ＝５０ｍＡ VBE(sat) Base-Emitter Saturation Voltage ０．９ １．２ Ｖ ＩＣ＝１Ａ， ＩＢ＝５０ｍＡ Base-Emitter On Voltage ６００ ６４０ ７００ ｍＶ ＶＣＥ＝２Ｖ， ＩＣ＝５０ｍＡ fT Current Gain-Bandwidth Product １００ １６０ ＭＨｚ ＶＣＥ＝２Ｖ， ＩＣ＝１００ｍＡ Cob Output Capacitance １９ ｐＦ VBE(on) ＶＣＢ＝１０Ｖ，ＩＥ＝０，ｆ＝１ＭＨｚ █ hFE Classification Ｙ 135—270 Ｇ 200—400 Ｌ 300—600 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1616 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1616