H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1- S █ Features 2-G 3-D High density cell design for low Rds(on). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg ——Storage Temperature ------------------------------------------------------ -55~150℃ T j ——Operating Junction Temperature ---------------------------------------------- -55~150℃ V DSS —— Drain-Source Voltage ---------------------------------------------------------- 60V VDGR —— Drain-Gate Voltage (RGS≤1MΩ) --------------------------------------------------------- 60V VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V ID —— Drain Current (Continuous) ---------------------------------------------------------------- 200mA PD —— Maximum Power Dissipation 400mW ----------------------------------------------------------- █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current Gate – Body Leakage, Forward Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VDS(ON) Drain-Source On-Voltage ID (ON) On-State Drain Current gFS Forward Transconductance Min. Typ. Max. 60 1 ±10 0.8 3.0 5 5.3 2.5 0.4 75 Unit V VGS=0V, ID=10µA µA VDS =48V, VGS=0V VGS= ±15V , VDS =0V nA V Ω Ω V V mA Ciss Input Capacitance 320 20 mS Coss Output Capacitance 11 25 pF Crss Reverse Transfer Capacitance 4 5 pF ton Turn - On Time 10 nS toff Turn - Off Time 10 nS 50 Conditions pF VDS = VGS , ID=1mA VGS=10V, ID=500mA VGS=4.5V, ID=75mA VGS=10V, ID=500mA VGS=4.5V, ID=75mA VGS=4.5V, VDS =10V VDS=10V, ID=200mA VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 15 V, RL = 25 Ω,ID = 500 m A,VGS = 10 V, RGEN = 25 Ω Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves H2N7000