MICRONAS HAL855UT-A

Hardware
Documentation
D at a S h e e t
®
HAL 855
Programmable Linear
Hall-Effect Sensor with
Arbitrary Output Characteristic
Edition Nov. 26, 2008
DSH000149_003EN
HAL855
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
Sensor programming with VDD-Modulation protected
by Micronas Patent No. EP 0 953 848.
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235, and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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Micronas
HAL855
DATA SHEET
Contents
Page
Section
Title
5
5
5
6
6
6
6
6
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
1.7.
Introduction
Major Applications
Features
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Solderability and Welding
Pin Connections and Short Descriptions
7
7
9
13
13
14
2.
2.1.
2.2.
2.3.
2.3.1.
2.3.2.
Functional Description
General Function
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
Example: Calibration of an Angle Sensor
16
16
20
20
20
21
21
22
24
25
26
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.6.1.
3.7.
3.8.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Position of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Specification of Biphase-M Output
Magnetic Characteristics
Diagnosis Functions
27
27
27
28
28
29
30
30
30
31
32
32
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
4.7.
4.7.1.
4.7.2.
4.7.3.
4.7.4.
Application Notes
Use of Two HAL855 in Parallel Operation
Measurement of a PWM Output Signal
Measurement of a Biphase-M Output Signal
Temperature Compensation
Ambient Temperature
EMC and ESD
Start-Up Behavior
First Operation (Power-Up)
Operation after Reset in Biphase-M Mode with Provide Part Number Option Enabled
Power-Down Operation
Power Drop Operation
33
33
33
37
38
38
40
5.
5.1.
5.2.
5.3.
5.4.
5.5.
5.6.
Programming of the Sensor
Definition of Programming Telegram
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
Micronas
Nov. 26, 2008; DSH000149_003EN
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HAL855
DATA SHEET
Contents, continued
Page
Section
Title
42
6.
Data Sheet History
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Nov. 26, 2008; DSH000149_003EN
Micronas
HAL855
DATA SHEET
Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic
Release Note: Revision bars indicate significant
changes to the previous edition.
Micronas. The sensors are designed for automotive or
industrial applications. They operate with ambient temperatures from −40 °C up to 150 °C. The HAL855 is
available in the very small leaded package TO92UT-1
and TO92UT-2.
1. Introduction
1.1. Major Applications
The HAL855 is a member of the Micronas family of
programmable linear Hall sensors. As an extension to
the HAL8x5 family, the HAL855 offers an arbitrary output characteristic and individual programming of different sensors which are in parallel to the same supply
voltage.
Due to the sensor’s versatile programming characteristics, the HAL855 is the optimal system solution for
applications such as:
– contactless potentiometers,
– rotary position measurement (e.g., pedal sensor),
– fluid level measurement,
The HAL855 is an universal magnetic field sensor
based on the Hall effect. The IC is designed and produced in sub-micron CMOS technology and can be
used for angle or distance measurements if combined
with a rotating or moving magnet. The major characteristics like magnetic field range, output characteristic,
output format, sensitivity, shift (offset), PWM period
and the temperature coefficients are programmable in
a non-volatile memory. The output characteristic can
be set with 32 setpoints.
The HAL855 features a temperature-compensated
Hall plate with choppered offset compensation, an
A/D-converter, digital signal processing, an EEPROM
memory with redundancy and lock function for the calibration data, a serial interface for programming the
EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because
analog offsets, temperature shifts, and mechanical
stress do not degrade the sensor accuracy.
The HAL855 is programmable by means of modulating the supply voltage. No additional programming pin
is needed. The easy programmability allows a 2-point
calibration by adjusting the output signal directly to the
input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the
customer’s manufacturing process is possible. With
this calibration procedure, the tolerances of the sensor,
the magnet, and the mechanical positioning can be
compensated in the final assembly. This offers a lowcost alternative for all applications that presently need
mechanical adjustment or laser trimming for calibrating
the system.
In addition, the temperature compensation of the Hall
IC can be fitted to all common magnetic materials, by
programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables
operation over the full temperature range with high
accuracy.
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas
– linear position detection, and
– magnetic field detection.
1.2. Features
– high-precision linear Hall effect sensors with different output formats
– various programmable magnetic characteristics with
non-volatile memory
– programmable output characteristic
(32 setpoints with 9-bit resolution)
– programmable output formats
(PWM or serial Biphase-M)
– programmable PWM period
– open-drain output
– digital signal processing
– temperature characteristics programmable for
matching all common magnetic materials
– programming by modulation of the supply voltage
– lock function and built-in redundancy for EEPROM
memory
– operates from –40 °C up to 150 °C ambient temperature
– operates from 4.5 V up to 18 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 2 kHz
– choppered offset compensation
– overvoltage protection on all pins
– reverse-voltage protection on VDD pin
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit-protected output
– EMC-optimized design
– programmable slew rate for optimized EMI behavior
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HAL855
DATA SHEET
1.3. Marking Code
1.6. Solderability and Welding
The HAL855 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Soldering
Type
HAL855
During soldering reflow processing and manual
reworking, a component body temperature of 260°C
should not be exceeded.
Temperature Range
A
K
Welding
855A
855K
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.4. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
A: TJ = −40 °C to +170 °C
K: TJ = −40 °C to +140 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 4.5.
on page 29.
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A and K
Package: UT for TO92UT-1/-2
Type: 855
1.7. Pin Connections and Short Descriptions
Pin
No.
Pin Name
Type
Short Description
1
VDD
IN
Supply Voltage and
Programming Pin
2
GND
3
OUT
Ground
OUT
Open-Drain Output
and Selection Pin
Example: HAL855UT-K
→ Type: 855
→ Package: TO92UT
→ Temperature Range: TJ = −40°C to +140°C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Micronas Hall Sensors: Ordering Codes, Packaging, Handling”.
HAL855
1 VDD
3
OUT
2 GND
Fig. 1–1: Pin configuration
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Micronas
HAL855
DATA SHEET
2. Functional Description
2.1. General Function
When no command is detected or processed and the
supply voltage is within the recommended operating
range the PWM or Biphase-M output is enabled.
The HAL855 is a monolithic integrated circuit which
provides an output signal proportional to the magnetic
flux through the Hall plate.
It is possible to program several sensors individually if
they are in parallel to the same supply and ground line.
The selection of each sensor is done via its output pin.
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers, converted to the different digital output formats
(PWM and Biphase-M serial protocol) and provided by
an open-drain output transistor stage. The function
and the parameters for the DSP are explained in
Section 2.2. on page 9.
Internal temperature compensation circuitry and the
choppered offset compensation enables operation
over the full temperature range with minimal changes
in accuracy and high offset stability. The circuitry also
rejects offset shifts due to mechanical stress from the
package. The non-volatile memory consists of redundant EEPROM cells. In addition, the sensor IC is
equipped with devices for overvoltage and reversevoltage protection at all pins.
HAL
855
The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset.
VPull-up
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). After detecting a
command, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
output is switched off during the communication.
VOUT (V)
VDD (V)
8
7
6
0
5
OUT
VDD
GND
Fig. 2–1: Programming with VDD modulation
VDD
Bandgap
Reference
Temperature
Dependent
Bias
Oscillator
Switched
Hall Plate
A/D
Converter
Digital
Signal
Processing
Supply
Level
Detection
Lock
Control
HAL855
Open-Drain Output
OUT
EEPROM Memory
GND
Fig. 2–2: HAL855 block diagram
Micronas
Nov. 26, 2008; DSH000149_003EN
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HAL855
DATA SHEET
Digital Output Register
14 bit
Digital Signal Processing
A/D
Converter
Digital
Filter
TC
TCSQ
6 bit
5 bit
Adder
Mode Register
Filter
Range
3 bit
3 bit
Multiplier
Find
Interval
Adder
Interpolate
between
Limits
Get
Limits
Output
Conditioning
Offset
Slope
Shift
Setpoints
Lock
Micronas
Customer
Correction
14 bit
10 bit
32 x 9 bit
1 bit
Register
Settings
EEPROM Memory
Lock
Control
Fig. 2–3: Details of EEPROM and digital signal processing
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Micronas
HAL855
DATA SHEET
2.2. Digital Signal Processing and EEPROM
The DSP is the major part of this sensor and performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2–3 on page 8.
Terminology:
SLOPE:
name of the register or register value
Slope:
name of the parameter
The EEPROM registers consist of three groups:
Group 1 contains the registers for the adaption of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC and
TCSQ for the temperature characteristics of the magnetic sensitivity.
operating range of the A/D converter is from −30 mT ...
+30 mT up to −150 mT... +150 mT.
During further processing, the digital signal is calculated based on the values of slope, shift, and the
defined output characteristic. The result is converted to
the different digital output formats (PWM and
Biphase-M) and stabilized by a open-drain output transistor stage.
The DIGITAL OUTPUT value at any given magnetic
field depends on the settings of the magnetic field
range, the low-pass filter, TC, TCSQ values and the
programmed output characteristic. The DIGITAL
OUTPUT range is min. 0 to max. 4095.
Note: During application design, it should be taken
into consideration that DIGITAL OUTPUT
should not saturate in the operational range of
the specific application.
The parameters SLOPE and SHIFT are used for the
individual calibration of the sensor in the magnetic cirucit.
– The parameter Shift corresponds to the output signal at B = 0 mT.
– The parameter Slope defines the magnetic sensitivity.
%
100
HAL 855
90
Group 2 contains the registers for defining the output
characteristics: OUTPUT FORMAT, OUTPUT PERIOD
or OUTPUT BITTIME, SLEW RATE and OUTPUT
CHARACTERISTIC.
The shape of the output signal is determined by the
output characteristic, which, in turn, is defined by the
32 setpoints of the sensor. A value for each of the setpoints must be defined. The setpoints are distributed
evenly along the magnetic field axis allowing linear
interpolation between the 32 setpoints (see Fig. 2–4).
PWM 80
70
60
50
40
30
Logarithmic
Group 3 contains the PARTNUMBER, the Micronas
registers, and LOCK for the locking of all registers.
After locking, the PARTNUMBER register is only available in Biphase-M output mode. The Micronas registers are programmed and locked during production
and are read-only for the customer. These registers
are used for oscillator frequency trimming and several
other special settings.
20
Linear
Sine
10
0
0
4
Logarithmic
8
12
16
20
24
28
32
Setpoint
Linear
Fig. 2–4:
Example for different
Sine
output characteristics
An external magnetic field generates a Hall voltage on
the Hall plate. The A/D-converter converts the amplified positive or negative Hall voltage (operates with
magnetic north and south poles at the branded side of
the package) to a digital value. The digital signal is
filtered in the internal low-pass filter and manipulated
according to the settings stored in the EEPROM. The
digital value after signal processing is readable in the
DIGITAL OUTPUT register. Depending on the programmable magnetic range of the Hall IC, the
Micronas
Nov. 26, 2008; DSH000149_003EN
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HAL855
DATA SHEET
Mode
Output Format
The MODE register consists of four “sub”-registers
defining the magnetic and output behavior of the sensor. The RANGE bits are the three lowest bits of the
MODE register; they define the magnetic field range of
the A/D converter. The next three bits (FILTER) define
the −3 dB frequency of the digital low pass filter. The
next sub-register is the FORMAT register, and it
defines the different output formats as described
below. This sub-register also consists of 3 bits. The
last three MSBs define the OUTPUT PERIOD of the
PWM signal.
The HAL855 provides two different output formats: a
PWM and Biphase-M output.
PMW output is a pulse width modulated output. The
signal is defined by the ratio of pulse width to pulse
period.
The Biphase-M output is a serial protocol. A logical “0”
is coded as no output level change within the bit time.
A logical “1” is coded as an output level change
between 50% and 80% of the bit time. After each bit,
an output level change occurs (see Section 3.6.1. on
page 24).
Range
Table 2–3: OUTPUT FORMAT register definition
Table 2–1: RANGE register definition
Magnetic Field Range
Bit Setting
−30 mT...30 mT
0
−40 mT...40 mT
4
−60 mT...60 mT
5
−75 mT...75 mT
1
−80 mT...80 mT
6
−90 mT...90 mT
2
−100 mT...100 mT
7
−150 mT...150 mT
3
Output Format
Bit Setting
PWM
2
Biphase-M
41)
Biphase-M (test)
52)
1)
2)
In case of OUTPUT FORMAT = 4 the continuous
Biphase-M output will be active after locking the
device. In order to test the Biphase-M output with
non-locked sensors OUTPUT FORMAT = 5 has
to be used.
writing OUTPUT FORMAT = 5 will activate the
Biphase-M output for test purpose. The test can
be deactivated by switching the device off.
Output Period
Filter
The OUTPUT PERIOD register defines the PWM
period of the output signal.
Table 2–2: FILTER register definition
Table 2–4: OUTPUT PERIOD register definition
−3 dB Frequency
Bit Setting
80 Hz
0
PWM Output Period
Bit Setting
160 Hz
1
128 ms; 12-bit resolution
0
500 Hz
2
64 ms; 12-bit resolution
1
1 kHz
3
32 ms; 12-bit resolution
2
2 kHz
4
16 ms; 12-bit resolution
3
8 ms; 12-bit resolution
4
4 ms; 11-bit resolution
5
2 ms; 10-bit resolution
6
1 ms; 9-bit resolution
7
10
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Micronas
HAL855
DATA SHEET
Output Bittime
Slope
The OUTPUT BITTIME register defines the bit time of
the Biphase-M output signal. OUTPUT BITTIME is
“sub”-register of the SPECIAL CUSTOMER register.
The SLOPE register contains the parameter for the
multiplier in the DSP. The Slope is programmable
between −4 and 4. The register can be changed in
steps of 0.00049. Slope = 1 corresponds to an
increase of the output signal by 100% if the digital
value at the A/D-converter output increases by 2048.
Table 2–5: OUTPUT BITTIME register definition
Biphase-M Output Bit Time
Bit Setting
40 μs
0
84 µs
1
168 µs
2
320 µs
3
700 µs
11
1.6 ms
4
3.2 ms
5
6.4 ms
7
For all calculations, the digital value after the digital
signal processing is used. This digital information is
readable from the DIGITAL OUTPUT register.
Shift
The SHIFT register contains the parameter for the
adder in the DSP. Shift is the output signal without
external magnetic field (B = 0 mT) and programmable
from −100% up to 100%. For calibration in the system
environment, a 2-point adjustment procedure is recommended. The suitable Slope and Shift values for
each sensor can be calculated individually by this procedure.
Part Number
Note: Setting the Biphase-M bit time to 40 μs simultaneously switches the programming telegram to
the same bit time. Hence after writing the
OUTPUT BITTIME register the timing of the programming device has to be set accordingly.
In case of Biphase-M output, a part number can be
defined. This part number will be sent during power-on
of the sensor if the PARTNUMBER ENABLE bit is set.
Afterwards, the sensor will send the digital value corresponding to the applied magnetic field.
– The PARTNUMBER ENABLE bit is part of the
SPECIAL CUSTOMER register.
– The OUTPUT PERIOD register defines the time
interval for which the part number is sent.
TC and TCSQ
The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaption is done by
programming the TC (Linear Temperature Coefficient)
and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the
temperature dependence of the magnetic sensitivity
can be matched to the magnet and the sensor assembly. As a result, the output signal characteristic can be
fixed over the full temperature range. The sensor can
compensate for linear temperature coefficients ranging
from about −2100 ppm/K up to 600 ppm/K and quadratic coefficients from about −5 ppm/K2 to 5 ppm/K2.
Please refer to Section 4.4. on page 28 for the recommended settings for different linear temperature coefficients.
Output Characteristic
The OUTPUT CHARACTERISTIC register defines the
shape of the sensor output signal. It consists of
32 setpoints. Each setpoint can be set to values
between 0 and 511 LSB. The output characteristic has
to be monotonic increasing (Setpoint0 ≤ Setpoint1
≤ SetpointN).
LOCKR
By setting this 1-bit register, all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation. This bit is active after the first
power-off and power-on sequence after setting the
LOCK bit.
Warning: This register cannot be reset!
Micronas
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HAL855
DATA SHEET
Digital Output
Slew Rate
This 12-bit register delivers the actual digital value of
the applied magnetic field after the signal processing.
This register can only be read out, and it is the basis
for the calibration procedure of the sensor in the system environment.
The SLEW RATE register is a “sub”-register of the
CURRENTSOURCE register. The output fall time of
the HAL855 depends on the SLEW RATE register setting and the external load circuit.
Note: The output rise time is purely due to the external
load and is not controlled by the SLEW RATE
register.
Offset Correction
The OFFSET CORRECTION register allows to adjust
the digital offset of the built-in A/D-converter. The digital offset can be programmed to −3/4, −1/2, −1/4, 0,
+1/4, +1/2, +3/4 of full-scale.
Table 2–6: OFFSET CORRECTION register definition
Offset Correction
Bit Setting
−3/4
28
−1/2
29
−1/4
30
0
0
1/4
17
1/2
18
3/4
19
12
Table 2–7: SLEW RATE register definition
Typ. Slew Rate
(3.6 kΩ pull-up, 4.7 nF)
Bit Setting
0.3 µs
0
0.8 µs
1
1.2 µs
2
1.5 µs
3
Note: The slew rate can be programmed to optimize
the EMI behavior of the application.
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Micronas
HAL855
DATA SHEET
2.3. Calibration Procedure
Step 2: Initialize DSP
2.3.1. General Procedure
As the DIGITAL OUTPUT register value depends on
the settings of SLOPE, SHIFT and the OUTPUT
CHARACTERISTIC, these registers have to be initialized with defined values, first:
For calibration in the system environment, the application kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming (Programmer Board Version 5.1) and the
corresponding software (PC85x) for the input of the
register values.
For the individual calibration of each sensor in the customer application, a two-point adjustment is recommended (see Fig. 2–5 on page 14 for an example).
The calibration shall be done as follows:
– ShiftINITIAL = 50%
– OUTPUT CHARACTERISTIC = ’Linear Standard’
(Setpoint 0 = 0, Setpoint 1 = 16, Setpoint 2 = 32, ...,
Setpoint 31 = 496).
– SlopeINITIAL depends on the setting of the digital
low-pass filter (see Table 2–8).
Table 2–8: Initial slope values
Step 1: Input of the registers which need not be
adjusted individually
−3 dB Frequency
SlopeINITIAL
The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, the
part number and the output format are given for this
application.
80
0.2578
160
0.2578
500
0.1938
Therefore, the values of the following registers should
be identical for all sensors of the customer application.
1000
0.1938
2000
0.3398
– FILTER
(according to the maximum signal frequency)
– RANGE
(according to the maximum magnetic field at the
sensor position)
– TC and TCSQ
(depends on the material of the magnet and the
other temperature dependencies of the application)
– OUTPUT FORMAT
(according to the application requirements)
– OUTPUT PERIOD
(according to the application requirements)
– PARTNUMBER
(in case Biphase-M output format is used)
– OFFSET CORRECTION
– SLEW RATE
Write the appropriate settings into the HAL855 registers.
Micronas
Step 3: Define Calibration Points
For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are recommended.
Define nominal values DOUT1NOM and DOUT2NOM of
the DIGITAL OUTPUT register at the calibration points
1 and 2, respectively.
Note: Micronas software PC85x uses default settings
DOUT1NOM = 0 and DOUT2NOM = 3968.
The output is clamped to Setpoint 0 and
Setpoint 31. In the case of “Linear Standard’”,
Setpoint 0
corresponds
to
DIGITAL
OUTPUT = 0, while Setpoint 31 corresponds to
DIGITAL OUTPUT = 3968.
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HAL855
DATA SHEET
Step 4: Calculation of Shift and Slope
2.3.2. Example: Calibration of an Angle Sensor
Set the system to calibration point 1 and read the
register DIGITAL OUTPUT. The result is the value
DOUT1.
The following description explains the calibration procedure using an angle sensor with a HAL855 as an
example. The required output characteristic is shown
in Fig. 2–5.
Now, set the system to calibration point 2, read the
register DIGITAL OUTPUT, and get the value DOUT2.
– the angle range is from −25° to 25°
– temperature coefficient of the magnet: −500 ppm/K
With these values, the settings for Sensitivity and Shift
are calculated as:
( DOUT2 NOM – DOUT1 NOM )
Slope = Slope INITIAL × --------------------------------------------------------------------------( DOUT2 – DOUT1 )
%
100
HAL 855
Second Calibration Point
100%
( DOUT2 – 2048 ) × Slope
Shift = -------------- × ⎛ DOUT2 NOM – ----------------------------------------------------------------⎞
⎠
4096 ⎝
Slope INITIAL
Output 90
Duty
Cycle 80
70
Write the calculated values for Slope, Shift, and the
desired output characteristic into the EEPROM. The
sensor is now calibrated for the customer application.
60
As long as the LOCK bit is not set, the calibration procedure can be applied repeatedly.
40
Note: For a recalibration, the calibration procedure
has to be started at the beginning (step 1).
A new initialization is necessary, as the initial
values for SlopeINITIAL, ShiftINITIAL and output
characteristic are overwritten in step 4.
50
30
Linear
20
Sine
First Calibration Point
10
-30
-20
-10
0
10
20
30 °
Angle
Linear
Fig. 2–5:
0 for output characteristics
Sine Example
Step 5: Locking the Sensor
The last step is activating the LOCK function with the
“LOCK” command. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.
Warning: This register cannot be reset!
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HAL855
DATA SHEET
Step 1: Input of the registers which need not be
adjusted individually
Manual Calculation:
The register values for the following registers are given
for all applications:
2. read the register DIGITAL OUTPUT.
1. Set the system to calibration point 1 (angle 1 = 25°)
For our example, the result is
DIGITAL OUTPUT = DOUT1 = 3291.
– FILTER
Select the filter frequency: 500 Hz
3. Set the system to calibration point 2 (angle 2 = −25°)
– RANGE
Select the magnetic field range: 40 mT
4. read the register DIGITAL OUTPUT again.
– TC
For this magnetic material: 6
For our example, the result is
DIGITAL OUTPUT = DOUT2 = 985.
– TCSQ
For this magnetic material: 14
With these measurements and the pre-programming
of the sensor, the values for Slope and Shift are calculated as:
– OUTPUT FORMAT
Select the output format: PWM
– OUTPUT PERIOD
Select the output format: 8 ms
3968
Slope = ------------------------------- × 0.1938 = – 0.3335
( 985 – 3291 )
– PARTNUMBER
For this example: 1
– OFFSET CORRECTION
For this example: none
100%
( 985 – 2048 ) × ( – 0.3335 )
Shift = -------------- × ⎛ 3968 – --------------------------------------------------------------⎞ = 52.22%
⎠
4096 ⎝
0.1938
– SLEW RATE
For this example: 0 (fastest)
Enter these values in the software, and use the “write
and store” command for permanently writing the values in the registers.
Write the calculated values for Slope and Shift and a
linear output characteristic ranging from 10% to 90%
output duty cycle into the EEPROM memory.
Software Calibration:
Step 2: Initialize DSP
– SHIFT
Select Shift: 50%
– SLOPE
Select Slope: 0.1938 (see Table 2–8 on page 13)
– OUTPUT CHARACTERISTIC
Select output characteristic: ’Linear Standard’
Step 3: Define Calibration Points
The Micronas software PC85x uses default settings
DOUT1NOM = 0 and DOUT2NOM = 3968.
DOUT1NOM corresponds to the angle position −25°,
DOUT2NOM to +25°.
Step 4: Calculation of Shift and Slope
There are two ways to calculate the values for Shift
and Slope.
Use the menu CALIBRATE from the PC software and
enter the values for the registers which are not
adjusted individually. Set the system to calibration
point 1 (angle 1 = 25°), hit the button “Digital Output1”,
set the system to calibration point 2 (angle 2 = −25°),
hit the button “Digital Output2”, and hit the button “Calculate”. The software will then calculate the appropriate Shift and Slope.
This calculation has to be done individually for each
sensor. Now, select an output characteristic from the
selection box “Output Characteristics” and then press
the button “write and store” for programming the sensor.
Step 5: Locking the Sensor
The last step is activating the LOCK function with the
“LOCK” command. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.
Warning: This register cannot be reset!
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HAL855
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread
Weight approximately 0.12 g
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HAL855
DATA SHEET
Fig. 3–2:
TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
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HAL855
DATA SHEET
Fig. 3–3:
TO92UT-2: Dimensions ammopack inline, not spread
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HAL855
DATA SHEET
Fig. 3–4:
TO92UT-1: Dimensions ammopack inline, spread
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HAL855
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
3.3. Position of Sensitive Areas
TO92UT-1/-2
y
1.5 mm nominal
A4
0.3 mm nominal
Bd
0.3 mm
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−14.51)
18
V
−IDD
Reverse Supply Current
1
−
502)
mA
IZ
Current through Protection Device
1 or 3
−502)
502)
mA
VOUT
Output Voltage
3
−0.3
>144)
14
184)
V
V
IOUT
Continuous Output Current
3
−502)
502)
mA
TJ
Junction Temperature Range
−40
−40
150
1703)
°C
NPROG
Number of Programming Cycles
−
100
1)
2)
3)
4)
20
t < 1 min.
as long as TJmax is not exceeded
t < 1000h
t < 100h
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HAL855
DATA SHEET
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
1
4.5
5
5.5
V
VDD
Battery Supply Voltage
1
8
12
18
V
6
12
18
Remarks
TJ >125°C,
RP = 120 Ω
TJ <125°C,
RP = 120 Ω
VPull-up
Output Pull-up Voltage
3
3
5
12
V
IOUT
Continuous Output Current
3
−
−
20
mA
CP
Protection Capacitance
1,2
4.7
4.7
1000
nF
CL
Load Capacitance
2,3
0.33
4.7
100
nF
Note: Please contact Micronas application support or check available application notes in case of usage of the sensor beyond recommended operating conditions.
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HAL855
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 14 V, after programming and locking of the device,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
over Temperature Range
1
−
7
8
mA
TJ > 125°C
−
7
10
mA
TJ < 125°C
IOH
Output Leakage Current over
Temperature Range
3
−
−
10
µA
VDDZ
Overvoltage Protection at
Supply
1
−
22
−
V
VOZ
Overvoltage Protection at
Output
3
−
22
−
V
Resolution
2,3
−
−
12
bit
1)
INL
Integral Non-Linearity over
Temperature Range
2,3
−0.5
0
0.5
%
2)
fPWM
PWM Output Frequency over
Temperature Range
3
920
1000
1080
Hz
PWM period: 1 ms; 9 bit res.
460
500
540
Hz
PWM period: 2 ms; 10 bit res.
230
250
270
Hz
PWM period: 4 ms; 11 bit res.
115
125
135
Hz
PWM period: 8 ms; 12 bit res.
57
62.5
68
Hz
PWM period: 16 ms; 12 bit res.
28
31
34
Hz
PWM period: 32 ms; 12 bit res.
13
15
17
Hz
PWM period: 64 ms; 12 bit res.
6.5
7.5
8.5
Hz
PWM period: 128 ms;12 bit res.
0.03
0.04
0.05
ms
Biphase-M bit time: 40 μs
2
3.2
4
ms
Biphase-M bit time: 3.2 ms
Biphase-M Output Bittime
over Temperature Range
3
tp1
Biphase-M Output Timing for
Logical 1
3
50
65
80
%
fADC
Internal ADC Frequency over
Temperature Range
−
110
128
150
kHz
VDD = 4.5 V to 14 V
tr(O)
Response Time of Internal
Signal3)
3
−
−
5
4
2
1
10
8
4
2
ms
ms
ms
ms
3 dB filter frequency = 80 Hz
3 dB filter frequency = 160 Hz
3 dB filter frequency = 500 Hz
3 dB filter frequency = 2 kHz
−
0.1
0.5
ms
−
6
5
3
2
11
9
5
3
ms
ms
ms
ms
tp0
td(O)
Delay Time of Internal Signal
tPOD
Power-Up Time (time to reach
stabilized internal signal)3)
−
3
−
−
1)
2)
3)
22
3 dB filter frequency = 80 Hz
3 dB filter frequency = 160 Hz
3 dB filter frequency = 500 Hz
3 dB filter frequency = 2 kHz
if the Hall IC is programmed suitably
if more than 50% of the selected magnetic field range are used and the Hall IC is programmed suitably
The output signal is updated at the begin of each PWM period or Biphase-M period.
The update time depends on the output format settings.
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HAL855
DATA SHEET
Symbol
Parameter
Pin No.
tLVD
Power-Down Time (time until
output is off)
VLVD
Power-Down Voltage
1
VPOD
Power-On Reset Voltage
BW
RDS,On
Min.
Typ.
Max.
Unit
50
75
µs
−
3.5
−
V
1
−
3.6
−
V
Small Signal Bandwidth
(−3 dB)
3
−
2
−
kHz
“On” Resistance RDS of
Output Transistor
3
−
50
100
Ω
Conditions
BAC < 10 mT;
3 dB Filter frequency = 2 kHz
TO92UT Packages
Thermal Resistance
Rthja
Junction to Air
−
−
−
235
K/W
Measured with a 1s0p board
Rthjc
Junction to Case
−
−
−
61
K/W
Measured with a 1s0p board
Rthjs
Junction to Solder Point
−
−
−
128
K/W
Measured with a 1s1p board
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HAL855
DATA SHEET
3.6.1. Specification of Biphase-M Output
Definition of Biphase-M Pulses
In case of output format Biphase-M, a continuous data
stream is provided. It consists of:
A logical “0” is coded as no output level change within
the bit time. A logical “1” is coded as an output level
change between 50% and 80% of the bit time. After
each bit, an output level change occurs.
– 1 SYNC bit defining the bit time tp0,
– 14 data bits (DAT)
– 1 parity bit (DP)
Data Bits (DAT)
– a gap (signal quiescent) of 8 x tp0
The 12 MSB of the 14 data bits (DAT) contain the digital output reading.
The complete signal period is T = 24 x tp0.
The signal quiescent level and the polarity of the
SYNC bit is shown in Fig. 3–5.
Type
SYNC Bit Polarity
HAL855
negative
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the 14
data bits is even. The parity bit is “0” if the number of
zeros is odd.
Note: If the part number output is activated the part
number will be transmitted 2 times after
power-up (see also (see Fig. 4–6 on page 31).
The first Biphase-M protocol respectively the
first PWM period after power-up is not valid.
HAL855:
VOUT
SYNC BIT
DAT
DP
8 x tp0
Fig. 3–5: Output format Biphase-M: continuous data stream
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DATA SHEET
3.7. Magnetic Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 14 V, after programming and locking of the device,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
BOffset
Magnetic Offset
3
−1
0
1
mT
B = 0 mT, TJ = 25 °C
ΔBOffset/ΔT
Magnetic Offset Change
due to TJ
−15
0
15
μT/K
B = 0 mT
Δα
Error of Linear Temperature
Coefficient of Magnetic Sensitivity
−400
0
400
ppm/K
TC and TCSQ suitable for the
application
NLSB(T)
Integral Non-Linearity of
Temperature Dependence of
Sensitivity
−
−
1
2
−
−
%
%
α < 2000 ppm/K
α >= 2000 ppm/K
Magnetic Hysteresis
−20
BHysteresis
TC and TCSQ suitable for the
application
Definition of Sensitivity Errors over Temperature
A ideal Hall-effect device would not be affected by
temperature. Its temperature compensation would
allow to compensate for a linear temperature coefficient αIDEAL of a permanent magnet.
S IDEAL = 1 + α IDEAL × ( T – T 0 )
The temperature dependence of the sensitivity of a
real sensor is not ideally linear. Its linear temperature
coefficient α is determined by a linear least square fit.
0
20
μT
Micronas specifies
temperature:
Range = 30 mT, Filter = 500 Hz
two
sensitivity
errors
over
1. the error of the linear temperature coefficient α:
Δα = α – α IDEAL
2. the maximum residual error over temperature
resulting from the least square fit, i.e., the integral
non-linearity of the temperature dependence of sensitivity:
NL SB ( T ) = max T res ( T )
S B = S 0 × ( 1 + α × ( T – T 0 ) + res ( T ) )
S0 and α are the fit parameters, res(T) the residual error.
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HAL855
DATA SHEET
3.8. Diagnosis Functions
The HAL855 features various diagnosis functions, such as undervoltage detection and open-circuit detection. A
description of the sensor’s behavior is shown in the table below (Typical Characteristics for TJ = 25 °C).
Parameter
Min.
Typ.
Max.
Unit
Output Behavior
Undervoltage Detection Level VDD, UV
3.0
3.5
4.0
V
No PWM output signal (output on high-level)
Open VDD Line
−
−
−
−
No PWM output signal (output on high-level)
Open GND Line
−
−
−
−
No PWM output signal
Note: The undervoltage detection is activated only after locking the sensor!
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HAL855
DATA SHEET
4. Application Notes
4.1. Use of Two HAL855 in Parallel Operation
Micronas recommends the following application circuits for HAL855. The first is recommended for applications with connection to a regualted 5 V supply; the
second schould be used for applications connected
dicrectly to the car battery and a pull-up to a 5 V line.
Two different HAL855 sensors which are operated in
parallel to the same supply and ground line can be
programmed individually. In order to select the IC
which should be programmed, both Hall ICs are deactivated by the “Deactivate” command on the common
supply line. Then, the appropriate IC is activated by an
“Activate” pulse on its output. Only the activated sensor will react to all following read, write, and program
commands. If the second IC has to be programmed,
the “Deactivate” command is sent again, and the second IC can be selected.
For both circuits, it is recommended to connect a
ceramic 4.7 nF capacitor between ground and the supply voltage, respectively, the output pin.
System side
Sensor side
Detailed information can be found in the application
note for the programmer board.
Vsupply = 5 V ±0.5 V
Rpull-up
1
VDD
CP = 4.7 nF
GND
CL = 4.7 nF
OUT
2
VDD
3
OUT A & Select A
Fig. 4–1: Application circuit HAL855
10 nF
HAL855
Sensor A
HAL855
Sensor B
OUT B & Select B
Vpull-up = 5 V ±0.5 V
System side
Vsupply = 8 V...18 V
VDD
GND
Rpull-up
OUT
4.7 nF
Sensor side
4.7 nF
GND
RP = 120 Ω
1
CP = 4.7 nF
CL = 4.7 nF
Fig. 4–3: Parallel operation of two HAL855
2
3
4.2. Measurement of a PWM Output Signal
Fig. 4–2: Application circuit HAL855 for connection
with car battery
In case that the PWM output mode is activated, the
magnetic field information is coded in the duty cycle of
the PWM signal. The duty cycle is defined as the ratio
between the high time “s” and the period “d” of the
PWM signal (see Fig. 4–4).
Note: The PWM signal is updated with the falling
edge. Hence, for signal evaluation, the triggerlevel must be the falling edge of the PWM signal.
Out
d
s
Vhigh
Vlow
Update
time
Fig. 4–4: Definition of PWM signal
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HAL855
DATA SHEET
4.3. Measurement of a Biphase-M Output Signal
In order to read the Biphase-M signal Micronas suggests to use a port interrupt which is configured to generate interrupts with both the falling and rising edge of
the incoming signal.
Table 4–1: Temperature compensation, continued
Typ. Temperature Coefficient
of Magnet (ppm/K)
TC
TCSQ
180
16
1
With each interrupt a timer shall be read out. The first
two edges (SYNC bit) define the bit time tp0. Comparing subsequent timer readouts with tp0 successively
decodes the Biphase-M pattern.
150
15
1
130
14
1
60
13
2
4.4. Temperature Compensation
40
12
2
10
11
2
−20
10
2
−50
9
2
−70
8
2
−100
7
3
−180
6
3
−200
5
3
−230
4
3
−260
3
3
−280
2
4
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table.
Micronas also offers a software named TC-Calc to
optimize the TC and TCSQ values for each individual
application based on customer measurement results.
Please contact Micronas for more detailed information.
Table 4–1: Temperature compensation
Typ. Temperature Coefficient
of Magnet (ppm/K)
TC
TCSQ
600
31
0
−360
1
4
570
30
0
−390
0
4
540
29
0
−410
−31
4
520
28
0
−490
−30
5
490
27
0
−510
−29
5
470
26
0
−540
−28
5
440
25
0
−610
−27
6
420
24
0
−640
−26
6
360
23
1
−670
−25
6
330
22
1
−740
−24
7
300
21
1
−780
−23
7
280
20
1
−840
−22
8
260
19
1
−880
−21
8
240
18
1
−950
−20
9
200
17
1
−980
−19
9
−1010
−18
9
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HAL855
DATA SHEET
Table 4–1: Temperature compensation, continued
4.5. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
Typ. Temperature Coefficient
of Magnet (ppm/K)
TC
TCSQ
−1080
−17
10
−1150
−16
11
−1180
−15
11
−1270
−14
12
−1290
−13
12
−1360
−12
13
−1430
−11
14
−1460
−10
14
−1540
−9
15
−1600
−8
16
−1670
−7
17
−1740
−6
18
−1810
−5
19
−1880
−4
20
Tjmax = 170
−1950
−3
21
The current through the output is calculated as follows:
−2020
−2
22
VPull-up = 5 V
−2100
−1
23
RPull-up = 470 Ω
T J = T A + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = IDD × VDD × R thjx + I Out × V OutLow × R thjx
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the
application.
Example with typical given values:
IDD = 0.007 A
VDD = 5 V
Rthja = 235 K/W
RDS,on = 50 Ω
VPull – up
5V
I Out = ---------------------------------------------- = ------------- ∼ 0.01A
R Pull – up + RDS, on 520Ω
V OutLow = I Out × RDS, on = 0.01A × 50Ω = 0.5V
ΔT is calculated as follows:
K
K
ΔT = 0.007A × 5V × 235 ----- + 0.01 A × 0. 5V × 235 ----- = 9.4
W
W
The maximum ambient temperature TAmax can be
calculated as:
T Amax = T Jmax – ΔT
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HAL855
DATA SHEET
4.6. EMC and ESD
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated disturbances, the application circuits shown in Fig. 4–1 on
page 27 are recommended. Applications with this
arrangement should pass the EMC tests according to
the product standards ISO 7637 part 1 to part 3.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Note: Micronas recommends to supply the HAL855
with a stabilized 5 V supply.
4.7. Start-Up Behavior
4.7.1. First Operation (Power-Up)
VDD
First PWM/Biphase-M signal starts
5V
3V
VDD,UVmin.
VOUT (3-wire mode)
Biphase-M
format
time
tPOD
Output undefined
Output undefined
The first period contains
no valid data
time
PWM format
No valid signal
Valid signal
Fig. 4–5: Power-up diagram
Note: The first PWM-period respectively the first Biphase-M protocol is not valid.
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DATA SHEET
4.7.2. Operation after Reset in Biphase-M Mode with Provide Part Number Option Enabled
VDD
First signal starts
5V
OUTPUT
time
tPOD
Part number max. 100 ms
No valid signal
DATA
Valid signal
Fig. 4–6: Biphase-M after reset
Note: The part number is transmitted twice. The transmission time depends on the chosen bit time, but is max.
100 ms.
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HAL855
DATA SHEET
4.7.3. Power-Down Operation
Last PWM/Biphase-M signal starts
5V
VDD,UV
VOUT (3-wire mode)
time
tLVD
Output undefined
Biphase-M
format
Output undefined
PWM format
Valid signal
No valid signal
Fig. 4–7: Power-down operation
4.7.4. Power Drop Operation
VDD
PWM/Biphase-M signal stops
New PWM/Biphase-M signal starts
VDD
5V
5V
Power-on
reset
Low voltage
on
VOUT (3-wire mode)
time
tPOD
tLVD
Output undefined
Biphase-M
format
Output undefined
PWM format
Valid signal
No valid signal
The first period contains
no valid data
Valid signal
Fig. 4–8: Power-drop operation
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DATA SHEET
5. Programming of the Sensor
5.1. Definition of Programming Telegram
The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with
a serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VDD-line and the sensors answer. The bit time
for the VDD-line is defined through the length of the
Sync Bit at the beginning of each telegram. The bit
time for the sensors answer is defined through the
Acknowledge Bit.
A logical “0” is coded as no output level change within
the bit time. A logical “1” is coded as an output level
change between 50% and 80% of the bit time. After
each bit, an output level change occurs.
5.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).
There are 4 kinds of telegrams:
– Write a register (see Fig. 5–2 on page 35)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
Note: The sensor can only be programmed with programmer board version 5.1. If you have an older
version, please contact Micronas or your supplier.
– Read a register (see Fig. 5–3 on page 35)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
– Programming the EEPROM cells
In order to permanently store the written data into
the EEPROM cells, an erase and program command have to be sent to the sensor. After the recognition of the erase and program commands, the
HAL855 answers with an acknowledge pulse on its
Micronas
output signal. After the acknowledge pulse, a pulse
on the VDD-line is created to start the charging of
the EEPROM cells. Then, the supply voltage is kept
constant during the charging time. To stop the
charging, a further command is sent to the HAL855.
This stopping command can be a further programming command or a read command (see Fig. 5–5
on page 36).
– Lock a sensor
To lock the EEPROM registers, the lock bit has to be
programmed. Write the lock bit into the lock register.
If the telegram is valid and the command has been
processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. In order to store
the lock bit permanently, an erase and program
command have to be sent to the sensor. The same
procedure as mentioned above (Programming the
EEPROM cells Fig. 5–5 on page 36). The EEPROM
registers are locked after a power on reset.
Note: It is mandatory to lock the sensor before performing any kind of reliability tests or after the
last programming of the sensor. The HAL855
has its full performance only after setting the
LOCK bit.
– Activate a sensor (see Fig. 5–4 on page 35)
If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. With an Activate pulse on the appropriate
output pin, an individual sensor can be selected. All
following commands will only be accepted from the
activated sensor.
tr
tf
high-level
tp0
logical 0
tp0
or
low-level
tp1
high-level
tp0
logical 1
low-level
tp0
or
tp1
Fig. 5–1: Definition of logical 0 and 1 bit
Nov. 26, 2008; DSH000149_003EN
33
HAL855
DATA SHEET
Table 5–1: Telegram parameters (All voltages are referenced to GND.)
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDDL
Supply Voltage for Low Level
during Programming
1
5
5.5
6
V
VDDH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise Time
1
−
−
0.05
ms
tf
Fall Time
1
−
−
0.05
ms
tp0
Bit Time on VDD
1
1.7
1.75
1.8
ms
tp0 is defined through the Sync Bit
tpOUT
Bit Time on Output Pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Voltage Change for Logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
tPROG
Programming Time for EEPROM
1
95
100
105
ms
VDD,PROG
Supply Voltage during
Programming
1
4.9
5
5.1
V
trp
Rise Time of Charging Pulse
1
0.2
0.5
1
ms
tfp
Fall Time of Charging Pulse
1
0
−
1
ms
tw
Delay Time of Charging Pulse
after Acknowledge
1
0.5
0.7
1
ms
Vact
Voltage for an Activate Pulse
3
0
0
0.5
V
tact
Duration of an Activate Pulse
3
0.05
0.1
−
ms
34
Nov. 26, 2008; DSH000149_003EN
Conditions
Micronas
HAL855
DATA SHEET
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VDD
VOUT
Fig. 5–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VDD
Acknowledge
DAT
DP
VOUT
Fig. 5–3: Telegram for coding a Read command
VOUT
VACT
tf
tACT
tr
Fig. 5–4: Activate pulse
Micronas
Nov. 26, 2008; DSH000149_003EN
35
Sync
PROM
ERASE
COM1
CP1
ADR1
AP1
Sync
COM2
CP2
READ
ADR2
AP2
Sync
COM3
CP3
ADR3
AP3
VDD
Acknowledge
Acknowledge
DAT
DP
DATA SHEET
Micronas
STORE
SEQUENCE
VOUT
A
Start the Charge Pump
Detail A
Stop the Charge Pump
VDD
VOUT
2 x Delay Time
Programming Time = 100 ms
Nov. 26, 2008; DSH000149_003EN
Fig. 5–5: Telegram for programming the EEPROM
HAL855
36
HAL855
DATA SHEET
5.3. Telegram Codes
Data Bits (DAT)
Sync Bit
The 14 Data Bits contain the register information.
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
The registers use different number formats for the
Data Bits. These formats are explained in Section 5.4.
on page 38
Command Bits (COM)
In the Write command, the last bits are valid. If, for
example, the TC register (7 bits) is written, only the
last 7 bits are valid.
The Command code contains 3 bits and is a binary
number. Table 5–2 shows the available commands
and the corresponding codes for the HAL855.
In the Read command, the first bits are valid. If, for
example, the TC register (7 bits) is read, only the first 6
bits are valid.
Command Parity Bit (CP)
This parity bit is “1” if the number of zeros within the 3
Command Bits is odd. The parity bit is “0”, if the number of zeros is even.
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the
binary number is even. The parity bit is “0” if the number of zeros is odd.
Address Bits (ADR)
The Address code contains 4 bits and is a binary number. (see Table 5–3 on page 39) shows the available
addresses for the HAL855 registers.
Acknowledge
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
Address Parity Bit (AP)
This parity bit is “1” if the number of zeros within the 4
Address bits is odd. The parity bit is “0” if the number
of zeroes is even.
Table 5–2: Available commands
Command
Code
Explanation
READ
0
read a Setup EEPROM register (like TC, TCSQ, magnetic range, etc.)
READL
6
read a Characteristics EEPROM register (setpoints 0 to 15)
READH
7
read a Characteristics EEPROM register (setpoints 16 to 31)
WRITE
3
write a Setup EEPROM register (like TC, TCSQ, Magnetic range, etc.)
WRITEL
1
write a Characteristics EEPROM register (setpoints 0 to 15)
WRITEH
2
write a Characteristics EEPROM register (setpoints 16 to 31)
PROM
4
program all non-volatile registers
ERASE
5
erase all non-volatile registers
Please note:
The LOCK bit is set by using the WRITE command followed by a PROM.
Micronas
Nov. 26, 2008; DSH000149_003EN
37
HAL855
DATA SHEET
5.4. Number Formats
SHIFT
Binary number:
– The register range is from −1024 up to 1023.
– The register value is calculated by:
The most significant bit is given as first, the least significant bit as last digit.
Shift
SHIFT = -------------- × 1024
100%
Example: 101001 represents 41 decimal.
SLOPE
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example:
– The register range is from −8192 up to 8191.
– The register value is calculated by:
0101001 represents +41 decimal
1101001 represents −41 decimal
SLOPE = Slope × 2048
TC and TCSQ
Two’s-complementary number:
– The TC register range is from −31 up to 31.
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
– The TCSQ register range is from 0 up to 31.
Example:
Note: The word length TC register is 7 bit. The 6 LSBs
represent a signed binary number. The MSB
has to be ignored.
0101001 represents +41 decimal
1010111 represents −41 decimal
MODE
– The register range is from 0 up to 16383 and contains the settings for PERIOD, FORMAT, FILTER,
and RANGE:
5.5. Register Information
CURRENTSOURCE
– The register range is from 0 to 1023 and contains
the settings for LOW CURRENT, HIGH CURRENT,
and SLEW RATE:
CURRENTSOURCE = SLEW RATE × 256 +
LOW CURRENT × 8 + HIGH CURR ENT
MODE = PERIOD × 512 + FORMAT × 64 +
FILTER × 8 + RANGE
Please refer to the data sheet for the available
PERIOD, FORMAT, FILTER, and RANGE values.
DIGITAL-READOUT
PARTNUMBER
– The register range is from 0 up to 2047.
– This register is read only.
– The register range is from 0 up to 4095.
OFFSET CORRECTION
– The register range is from 0 to 31
– The MSB is set to activate the offset correction.
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Nov. 26, 2008; DSH000149_003EN
Micronas
HAL855
DATA SHEET
DEACTIVATE
SPECIAL CUSTOMER
– The register range is from 0 to 63 and contains the
settings for OUTPUT BITTIME and PARTNUMBER
ENABLE:
SPECIAL CUSTOMER = PARTNUMBER ENABLE ×
16 + OUTPUT BITTIME
This register can only be written.
– The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
– The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supply
voltage.
Note: When output format PWM is used the default
values for the PARTNUMBER ENABLE bit must
not be modified:
HAL855: PARTNUMBER ENABLE = 1
Table 5–3: Available register addresses for HAL855
Register
Code
Data Bits
Format
Customer
Remark
Currentsource
1
10
binary
read/write/program
In case of HAL855:
used to define output slew
rate
In case of HAL856:
used to define output
current levels
(IDD_HIGH and IDD_LOW)
Partnumber
2
11
binary
read/write/program
Only with Biphase-M mode
Shift
3
11
two’s compl.
read/write/program
Slope
4
14
signed binary
read/write/program
Mode
5
14
binary
read/write/program
Range, filter, and output format settings
Lock
6
1
binary
write/program
Lock bit
Digital Readout
7
12
binary
read
Digital value after signal processing
Offset
Correction
8
5
two’s compl.
(4 LSBs)
read/write/program
Compensation of system
offsets
Specialcust.
9
6
binary
read/write/program
Special customer register
To define Biphase-M bittime
and Partnumber Enable
TC
11
6
signed binary
(6 LSBs)
read/write/program
Linear temperature coefficient
TCSQ
12
5
binary
read/write/program
Quadratic temperature coefficient
DEACTIVATE
15
11
binary
write
Deactivate the sensor
Curve Low
0 ... 15
9
binary
write/read/program
Setpoints 0 to 15
Curve High
0 ... 15
9
binary
write/read/program
Setpoints 16 to 31
Micronas
Nov. 26, 2008; DSH000149_003EN
39
HAL855
DATA SHEET
5.6. Programming Information
If the content of any register is to be changed, the
desired value must first be written into the corresponding RAM register. Before reading out the RAM register
again, the register value must be permanently stored
in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command and a read command. The
address within the ERASE and PROM commands is
not important. ERASE and PROM act on all registers
in parallel.
If all HAL855 registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
During all communication sequences, the customer
has to check if the communication with the sensor was
successful. This means that the acknowledge and the
parity bits sent by the sensor have to be checked by
the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent
from the programmer board. It is recommended to use
the programmer board version 5.1.
Further information for the programming of the sensor
can be found in the application note for the programmer board.
Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment
and programming of HAL855. The LOCK function is active after the next power-up of the sensor.
The success of the LOCK process should be
checked by reading at least one sensor register
after locking and/or by an analog check of the
sensors output signal.
Electrostatic Discharges (ESD) may disturb the
programming pulses. Please take precautions
against ESD.
40
Nov. 26, 2008; DSH000149_003EN
Micronas
HAL855
DATA SHEET
intentionally left vacant
Micronas
Nov. 26, 2008; DSH000149_003EN
41
HAL855
DATA SHEET
6. Data Sheet History
1. Data Sheet: “HAL85x Programmable Linear HallEffect Sensor”, Dec. 5, 2005, 6251-604-1DS. First
release of the data sheet. Major changes:
– Section 3.6. Characteristics changed
– Section 2. Functional Description: new features
added
– Section 2.3. Calibration Procedure: completely
updated
2. Data Sheet: “HAL855 Programmable Linear HallEffect Sensor with Arbitrary Output Characteristic”,
Oct. 23, 2008, DSH000149_001EN. First release of
the HAL855 data sheet. Major changes:
– The previous data sheet for HAL85x has been separated into two individual data sheets, one each for
HAL855 and for HAL856. This document describes
HAL855 only.
– Section 1.6."Solderability and Welding" updated
– Section 4.4."Temperature Compensation" updated
– Section 4.7."Start-Up Behavior" added
3. Data Sheet: “HAL855 Programmable Linear HallEffect Sensor with Arbitrary Output Characteristic”,
Oct. 29, 2008, DSH000149_002EN. Second
release of the HAL855 data sheet. Minor change:
– Section 3.4."Absolute Maximum Ratings":
VOUT updated
4. Data Sheet: “HAL855 Programmable Linear HallEffect Sensor with Arbitrary Output Characteristic”,
Nov. 26, 2008, DSH000149_003EN. Third release
of the HAL855 data sheet. Originally created for HW
version HACD-4-4. Minor change:
– Note regarding usage of the sensor beyond recommended operating conditions added
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
42
Nov. 26, 2008; DSH000149_003EN
Micronas