RENESAS HAT2173H-EL-E

HAT2173H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0030-0200
Rev.2.00
Sep 26, 2005
Features
•
•
•
•
•
High speed switching
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 12 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5
3
12
4
G
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Rev.2.00 Sep 26, 2005 page 1 of 7
Symbol
VDSS
VGSS
ID
Note1
ID(pulse)
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
100
±20
25
100
25
25
62.5
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
HAT2173H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.2.00 Sep 26, 2005 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
100
±20
—
—
4.0
—
—
27
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
12
13
45
4350
520
150
0.5
61
23
14.5
20
15
Max
—
—
±10
1
6.0
15
17.5
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
—
—
—
—
37
5.7
0.82
55
—
—
1.07
—
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, ID = 20 mA
ID = 12.5 A, VGS = 10 V Note4
ID = 12.5 A, VGS = 8 V Note4
ID = 12.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 50 V,VGS = 10 V,
ID = 25 A
VGS = 10 V, ID = 12.5 A,
VDD ≅ 30 V, RL = 2.4 Ω,
Rg = 4.7 Ω
IF = 25 A, VGS = 0 Note4
IF = 25 A, VGS = 0,
diF/ dt = 100 A/ µs
HAT2173H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
100
50
100
150
Case Temperature
10
30
n
1
Operation in
this area is
0.1 limited by RDS(on)
0.01
0.1 0.3
200
6.2 V
5.8 V
20
5.6 V
10
5.4 V
2
4
6
8
Drain to Source Voltage
300
ID = 50 A
200
20 A
100
10 A
Gate to Source Voltage
Rev.2.00 Sep 26, 2005 page 3 of 7
Tc = 75°C
-25°C
10
0
16
20
VGS (V)
2
4
6
8
Gate to Source Voltage
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
400
12
25°C
20
VDS (V)
Pulse Test
8
40
30
10
500
4
VDS (V)
VDS = 10 V
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0
500
5.2 V
VGS = 5.0 V
0
100
50
Pulse Test 6.0 V
30
3
Typical Transfer Characteristics
ID (A)
40
10 V
8V
1
Drain to Source Voltage
Tc (°C)
Drain Current
50
ID (A)
10
µs
tio
Typical Output Characteristics
Drain Current
10
Tc = 25°C
1 shot Pulse
0
Drain to Source Voltage VDS(on) (mV)
10
PW 1 m 0 µs
s
DC =
1
Op 0 m
er
s
a
100
Pulse Test
50
20
VGS = 8 V
10
10 V
5
2
1
1
3
10
Drain Current
30
ID (A)
100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2173H
50
Pulse Test
40
ID = 5 A, 10 A, 20 A
30
20
VGS = 8 V
10
5 A, 10 A, 20 A
10 V
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc
1000
300
100
Tc = -25°C
30
10
75°C
3
25°C
1
VDS = 10 V
Pulse Test
0.3
0.1
0.1
0.3
(°C)
10000
Ciss
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
Typical Capacitance vs.
Drain to Source Voltage
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1
0.3
1
3
10
Reverse Drain Current
30
3000
1000
Coss
300
Crss
100
30
VGS = 0
f = 1 MHz
10
100
0
IDR (A)
10
16
12
150
VDD = 100 V
100
50
8
50 V
4
25 V
VDS
0
20
40
Gate Charge
Rev.2.00 Sep 26, 2005 page 4 of 7
60
80
Qg (nc)
40
50
0
100
1000
Switching Time t (ns)
VDD = 100 V
50 V
25 V
200
20
VGS (V)
VGS
ID = 25 A
30
Switching Characteristics
Gate to Source Voltage
250
20
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
30
10
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
3
1
300
tf
100
td(off)
30 td(on)
10
3
tr
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
HAT2173H
(mJ)
Reverse Drain Current vs.
Source to Drain Voltage
40
Repetitive Avalanche Energy EAR
Reverse Drain Current IDR (A)
50
10 V
30
20
5V
VGS = 0
10
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 25 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/ W, Tc = 25°C
0.1
0.05
PDM
0.02
1
0.0
0.03
0.01
10 µ
D=
lse
t
ho
PW
T
PW
T
pu
1s
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
EAR =
L
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.2.00 Sep 26, 2005 page 5 of 7
VDD
HAT2173H
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
Rev.2.00 Sep 26, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
HAT2173H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
HAT2173H-EL-E
Quantity
2500 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 26, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0