NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBD241C █ APPLICATIONS Medium Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 40W VCER ——Collector-Emitter Voltage……………………… 115V VCEO ——Collector-Emitter Voltage……………………… 100V 1―Base，B 2―Collector，C 3―Emitter, E VEBO ——Emitter-Base Voltage……………………………… 5V IC——Collector Current（DC）………………………………… 3A IC——Collector Current（Pulse）………………………………5A IB——Base Current……………………………………………1A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO(SUS) ICEO Characteristics Collector-Emitter Sustaining Voltage Emitter-Base Cutoff Current ICES Collector Cutoff Current DC Current Gain HFE（2） Typ Max Unit Test Conditions V IC=30mA, IB=0 300 nA VCE=60V, IB=0 1 mA VEB=5V, IC=0 200 μA VCE=100V, VBE=0 100 Collector Cut-off Current IEBO HFE（1） Min 25 VCE=4V, IC=1A 10 VCE=4V, IC=3A VCE(sat) Collector- Emitter Saturation Voltage 1.2 V IC=3A, IB=0.6A VBE(on) Base- Emitter On Voltage 1.8 V VCE=4V,IC=3A,