PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits VF(typ.)* = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count VR = 600V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free CATHODE 3 ANODE 2 trr(typ.) = 18ns di(rec)M/dt (typ.) = 240A/µs Description International Rectifier's HFA08TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AC Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max Units 600 8.0 60 24 36 14 V - 55 to +150 C A W * 125°C www.irf.com 1 10/18/04 HFA08TB60PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min Typ Max Units V BR Cathode Anode Breakdown Voltage 600 V VFM Max Forward Voltage IRM Max Reverse Leakage Current CT Junction Capacitance 1.4 1.7 1.4 0.3 100 10 LS Series Inductance 8.0 1.7 2.1 1.7 5.0 500 25 V µA pF nH Test Conditions IR = 100µA IF = 8.0A See Fig. 1 IF = 16A IF = 8.0A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 0.8 x VR RatedD Rated VR = 200V See Fig. 3 Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M /dt1 di(rec)M /dt2 Min Typ Max Units Reverse Recovery Time See Fig. 5, 6 & 16 Peak Recovery Current See Fig. 7& 8 Reverse Recovery Charge See Fig. 9 & 10 Peak Rate of Fall of Recovery Current During tb See Fig. 11 & 12 18 37 55 3.5 4.5 65 124 240 210 55 90 5.0 8.0 138 360 ns A nC A/µs Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C I F = 8.0A TJ = 25°C TJ = 125°C VR = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Tlead RthJC RthJA RthCS Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Wt Weight Mounting Torque Min Typ Max Units 300 3.5 80 °C K/W 12 10 g (oz) Kg-cm lbfin 0.5 2.0 0.07 6.0 5.0 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA08TB60PbF 1000 Reverse Current - IR (µA) 10 TJ = 150°C TJ = 125°C TJ = 150°C 100 TJ = 125°C 10 1 0.1 TJ = 25°C 0.01 0.001 0 100 TJ = 25°C 200 300 400 500 600 Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1 100 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Junction Capacitance -CT (pF) Instantaneous Forward Current - IF (A) 100 A TJ = 25°C 10 1 1 10 100 1000 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA08TB60PbF 80 20 VR = 200V TJ = 125°C TJ = 25°C I F = 16A I F = 8.0A I F = 4.0A 60 15 Irr- ( A) trr- (nC) IF = 16A IF = 8.0A IF = 4.0A 40 10 20 5 VR = 200V TJ = 125°C TJ = 25°C 0 100 di f /dt - (A/µs) 0 100 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt 1000 di f /dt - (A/µs) Fig. 6 - Typical Recovery Current vs. dif/dt 10000 500 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 400 I F = 16A di (rec) M/dt- (A /µs) I F = 16A Qrr- (nC) I F = 8.0A 300 I F = 4.0A 200 I F = 8.0A I F = 4.0A 1000 100 0 100 di f /dt - (A/µs) Fig. 7 - Typical Stored Charge vs. dif/dt 4 1000 100 100 di f /dt - (A/µs) 1000 Fig. 8 - Typical di(rec)M/dt vs. dif/dt www.irf.com HFA08TB60PbF 3 t rr IF REVERSE RECOVERY CIRCUIT tb ta 0 Q rr VR = 200V 2 I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω 0.75 I RRM L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit www.irf.com 5 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and I RRM trr X IRRM Q rr = 2 5. di(rec)M/dt - Peak rate of change of current during t b portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions 5 HFA08TB60PbF TO-220AC Package Outline Dimensions are shown in millimeters (inches) TO-220AC Part Marking Information PART NUMBER EXAMPLE: T HIS IS A HF A06T B120 LOT CODE 1789 ASS EMBLED ON WW 19, 2001 IN THE AS SEMBLY LINE "C" INT ERNAT IONAL RECT IF IER LOGO DAT E CODE ASS EMB LY LOT CODE P = LEAD-F REE YEAR 1 = 2001 WEEK 19 LINE C PART NUMB ER EXAMPLE: T HIS IS A HFA06T B120 LOT CODE 1789 AS SEMBLED ON WW 19, 2001 IN T HE ASS EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO DAT E CODE ASS EMBLY LOT CODE YEAR 1 = 2001 WEEK 19 P = LEAD-F REE Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 6 www.irf.com