HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz 11 Typical Applications Features The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifier for: Saturated Output Power: +33 dBm @ 20% PAE • Point-to-Point Radios Gain: 18 dB • Point-to-Multi-Point Radios DC Supply: +7.V @ 1340 mA • Test Equipment & Sensors 50 Ohm Matched Input/Output • Military End-Use QFN Leadless SMT Packages, 25 mm2 Output IP3: +41 dBm LINEAR & POWER AMPLIFIERS - SMT • Space Functional Diagram General Description The HMC591LP5 & HMC591LP5E are high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifiers which operate from 6 to 9.5 GHz. The amplifier provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1] Parameter Min. Frequency Range Typ. Max. Min. 6-8 Gain 16 Max. 18 dB dB/ °C Input Return Loss 14 12 dB Output Return Loss 12 10 dB 33 dBm 33 dBm 41 41 dBm 1340 1340 mA 30 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 32 32.5 [2] Supply Current (Idd) 30 [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm 11 - 302 GHz 0.05 Output Power for 1 dB Compression (P1dB) 15 Units 0.05 Gain Variation Over Temperature 19 Typ. 6 - 9.5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain vs. Temperature 25 28 15 24 -5 -15 20 +25C +85C -40C 12 -25 8 4 5 6 7 8 9 10 11 12 6 6.5 7 FREQUENCY (GHz) 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 8 8.5 9 9.5 10 Output Return Loss vs. Temperature 0 -10 -15 +25C +85C -40C -20 7.5 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 +25C +85C -40C -20 -25 -25 4 5 6 7 8 9 10 11 12 4 5 6 FREQUENCY (GHz) 8 9 10 11 12 9 9.5 10 Psat vs. Temperature 36 34 34 Psat (dBm) 36 32 +25C +85C -40C 30 7 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 11 16 28 LINEAR & POWER AMPLIFIERS - SMT S21 S11 S22 5 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 32 +25C +85C -40C 30 28 26 26 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) 9 9.5 10 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 303 HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Psat vs. Current 36 34 34 Psat (dBm) 36 32 30 940 mA 1140 mA 1340 mA 28 32 940 mA 1140 mA 1340 mA 30 28 26 26 6 6.5 7 7.5 8 8.5 9 9.5 10 6 6.5 7 FREQUENCY (GHz) 7.5 8 8.5 9 10 14 18 Power Compression @ 8 GHz, 7V @ 1340 mA 35 Pout(dBm), GAIN (dB), PAE(%) 46 42 38 +25C +85C -40C 34 30 26 6 6.5 7 7.5 8 8.5 9 9.5 30 20 15 10 5 0 -14 10 Pout Gain PAE 25 -10 -6 FREQUENCY (GHz) -2 2 6 10 INPUT POWER (dBm) Output IM3, 7V @ 940 mA Output IM3, 7V @ 1340 mA 100 100 90 80 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 80 70 60 40 IM3 (dBc) IM3 (dBc) 9.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 940 mA, Pin/Tone = -15 dBm IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT 11 P1dB (dBm) P1dB vs. Current 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 20 60 50 40 30 20 0 -20 -16 -12 -8 -4 Pin/Tone (dBm) 11 - 304 0 4 8 10 -20 -16 -12 -8 -4 0 Pin/Tone (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 8 HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz 36 32 Gain P1dB Psat 28 24 20 16 940 1140 32 Gain P1dB Psat 28 11 24 20 16 6.5 1340 7 Idd SUPPLY CURRENT (mA) Reverse Isolation vs. Temperature, 7V @ 1340 mA Power Dissipation 0 POWER DISSIPATION (W) 10 +25C +85C -40C -20 ISOLATION (dB) 7.5 Vdd SUPPLY VOLTAGE (Vdc) -40 -60 -80 6 7 8 9 10 9 8 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 7 6 -14 -10 FREQUENCY (GHz) Absolute Maximum Ratings -6 -2 2 6 10 Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 1350 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm +7.0 1340 Channel Temperature 175 °C +7.5 1330 Continuous Pdiss (T= 75 °C) (derate 104.3 mW/°C above 75 °C) 10.43 W Thermal Resistance (channel to package bottom) 9.59 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 14 INPUT POWER (dBm) LINEAR & POWER AMPLIFIERS - SMT GAIN (dB), P1dB (dBm), Psat(dBm) GAIN (dB), P1dB (dBm), Psat(dBm) 36 Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1340 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 305 HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Outline Drawing LINEAR & POWER AMPLIFIERS - SMT 11 11 - 306 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC591LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC591LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H591 XXXX [2] H591 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Pad Descriptions Function Description 1, 2, 6 - 8, 10 - 12, 14, 15, 17 - 19, 23, 24, 26, 27, 29 - 31 N/C Not connected. 3, 5, 20, 22 GND Package bottom has an exposed metal paddle that must be connected to RF/DC ground. 4 RFIN This pad is AC coupled and matched to 50 Ohms. 9 Vgg Gate control for amplifier. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 2.2 μF are required. 13, 16, 25, 28, 32 Vdd 1-5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 μF are required. 21 RFOUT This pad is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 LINEAR & POWER AMPLIFIERS - SMT Pad Number 11 - 307 HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Application Circuit Component Value C1 - C6 100pF C7 - C12 2.2μF LINEAR & POWER AMPLIFIERS - SMT 11 11 - 308 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Evaluation PCB List of Materials for Evaluation PCB 108190 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 - C6 100pF Capacitor, 0402 Pkg. C7 - C12 2.2 μF Capacitor, 1206 Pkg U1 HMC591LP5 / HMC591LP5E PCB [2] 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 309