HSMC HSB1386A

HI-SINCERITY
Spec. No. : HA200111
Issued Date : 2001.12.01
Revised Date : 2005.02.14
Page No. : 1/4
MICROELECTRONICS CORP.
HSB1386A
LOW FREQUENCY TRANSISTOR (-20V, -4A)
Features
• Low VCE(sat).
VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A)
TO-92
• Excellent DC current gain characteristics.
Structure
Epitaxial planar type PNP silicon transistor
Absolute Maximum Ratings (TA=25°C)
Symbol
Parameter
Limits
Unit
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-6
V
-4
A
IC
Collector Current
-10
A(Pulse)*
PD
Collector Power Dissipation (Ta=25oC)
750
mW
Tj
Junction Temperature
150
o
C
-55~+150
o
C
Tstg
Storage Temperature
Electrical Characteristics (TA=25°C)
Symbol
Parameter
Min.
Typ. Max.
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
-30
-
-
V
IC=-50uA
BVCEO
Collector-Emitter B reakdown Voltage
-20
-
-
V
IC=-1mA
BVEBO
Emitter-Base Breakdown Voltage
-6
ICBO
Collector Cutoff Current
-
-
-0.5
uA
VCB=-20V
IEBO
Emitter Cutoff Current
-
-
-0.5
uA
VEB=-5V
Collector-Emitter Saturation Voltage
-
-
-1
V
IC/IB=-4A/-0.1A
82
-
580
*VCE(sat)
*hFE
DC Current Transfer Ratio
IC=-50uA
fT
Transition Frequency
-
110
-
Cob
Output Capacitance
-
30
-
VCE=-2V, IC=-0.5A
MHz VCE=-6V, IE=50mA, f=30MHz
pF
VCB=-20V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
P
Q
R
E
Range
82-180
120-270
180-390
370-580
HSB1386A
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200111
Issued Date : 2001.12.01
Revised Date : 2005.02.14
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
Saturation Voltage (mV)
hFE
1000
hFE @ VCE=2V
100
VCE(sat) @ IC=20IB
100
VCE(sat) @ IC=40IB
10
1
1
10
100
1000
10000
1
Collector Current-IC (mA)
100
1000
10000
Collector Current-IC (mA)
Saturation Voltage & Collector Current
Capacitance & Reverse-Biased Voltage
10000
1000
Capacitance (pF)
Saturation Voltage (mV)
10
1000
VBE(sat) @ IC=20IB
100
100
Cob
10
1
10
100
1000
10000
Collector Current-IC (mA)
0.1
1
10
100
Reverse Biased Voltage (V)
Power Derating
800
PD(mW) , Power Dissipation
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
o
Ta( C) , Ambient Temperature
HSB1386A
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200111
Issued Date : 2001.12.01
Revised Date : 2005.02.14
Page No. : 3/4
MICROELECTRONICS CORP.
TO-92 Dimension
A
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
B
1
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Marking:
α2
2
H
SB
1 3 8 6 A
3
Control Code
Date Code
α3
Note: Green label is used for pb-free packing
C
Pin Style: 1.Emitter 2.Collector 3.Base
D
H
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
G
Min.
4.33
4.33
12.70
0.36
3.36
0.36
-
Max.
4.83
4.83
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
*: Typical, Unit: mm
α1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
H2
H2A H2A
H2
D2
A
H3
H4 H
L
L1
H1
W1
W
D1
F1F2
T2
T
T1
P1
P
P2
D
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1386A
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200111
Issued Date : 2001.12.01
Revised Date : 2005.02.14
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HSB1386A
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification