1SS171 SILICON EPITAXIAL PLANAR DIODE for high speed switching circuits Max. 0.5 Features • High switching speed • Small terminal capacitance • Large forward current Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 80 V VR 80 V Average Forward Current IF(AV) 200 mA Repetitive Peak Forward Current IFRM 600 mA Non-Repetitive Peak Forward Surge Current (at t = 1 s) IFSM 1 A Junction Temperature TJ 175 O Storage Temperature Range Tstg - 65 to + 175 O Symbol Max. Unit Forward Voltage at IF = 200 mA VF 1.1 V Reverse Current at VR = 15 V at VR = 75 V IR 50 500 nA Terminal Capacitance at VR = 0 V, f = 1 MHz CT 4 pF Reverse Recovery Time at IF = 10 mA, Irr = 0.1 IR, RL = 100 Ω trr 20 ns Repetitive Peak Reverse Voltage Reverse Voltage C C Electrical Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 1SS171 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007